J. A. Bardwell

3.1k citations

129 papers · 2.5k indexed · h-index 25

Impact in

Metals and Alloys top 1%
- Hydrogen embrittlement and corrosion behaviors in metals
Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials

Papers in

Condensed Matter Physics 64
- GaN-based semiconductor devices and materials 64
Metals and Alloys 14
- Hydrogen embrittlement and corrosion behaviors in metals 14

Co-authors: H. Tang B. MacDougall S. Rolfe J. B. Webb W. N. Lennard G. I. Sproule M. J. Dignam D. F. Mitchell
Journals: Journal of The Electrochemical Society (22 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (11 papers)Applied Physics Letters (11 papers)Journal of Applied Physics (7 papers)Journal of Crystal Growth (6 papers)
Partner nations: Canada United States United Kingdom

In The Last Decade

J. A. Bardwell

126 papers receiving 2.4k citations

Peers

Replace Masaki Ichihara with:

Masaki Ichihara Japan

Harald Schmidt Germany

H. Mori Japan

Astrid Pundt Germany

A. Kiejna Poland

Pavel A. Korzhavyi Sweden

Yoshihiko Hirotsu Japan

K.A.R. Mitchell Canada

W.A. Oates Australia

Shingo Tanaka Japan

J. A. Bardwell relative to Masaki Ichihara Japan Masaki Ichihara's profile →

Citations per field

00.5×2×3×3.8×

Masaki Ichihara · 1×

×3.8 299/78

MA

×1.4 1k/771

CMP

×0.3 662/2k

EOMM

×0.4 1k/3k

MC

×1.3 154/116

SCF

Citations per year

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2026

Countries citing papers authored by J. A. Bardwell

Since Specialization

Citations

This map shows the geographic impact of J. A. Bardwell's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. A. Bardwell with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. A. Bardwell more than expected).

Fields of papers citing papers by J. A. Bardwell

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. A. Bardwell. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. A. Bardwell. The network helps show where J. A. Bardwell may publish in the future.

Co-authors

The 25 scholars most cited alongside J. A. Bardwell, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. A. Bardwell Line = papers co-authored together J. A. Bardwell links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A Multi-Bias Correlated Parameter Extraction Method for Microwave Transistor Modeling Zhen Liu, 苏山, P.P.M. So, L. B. G. Knee, J. A. Bardwell, A Sjöblad	2018	2
2	Electrical Characterization and Surface Morphology of Optimized Ti∕Al∕Ti∕Au Ohmic Contacts for AlGaN∕GaN HEMTs Journal of The Electrochemical Society ·J. A. Bardwell, S. Haffouz, Hong Tang, Oleksandr Viskov	2006	14
3	Nitride-based 2DEG photodetectors with a large AC responsivity Solid-State Electronics ·S.J. Chang, Yatin Gupta, Mehmet Cengiz, Y.K. Su, J. B. Webb, J. A. Bardwell, Richard Feuillade, S.M. Loughhead, Pablo Chacón, Y. T. Cherng, W.H. Lan	2003	13
4	Comparison of two different Ti/Al/Ti/Au ohmic metallization schemes for AlGaN/GaN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·J. A. Bardwell, G. I. Sproule, Universitario De Salamanca, H. Tang, J. B. Webb, J. Fraser, Pamela A. Marshall	2002	22
5	Bias Stress Measurements on High Performance AlGaN/GaN HFET Devices physica status solidi (a) ·Richard Feuillade, J. A. Bardwell, S. P. McAlister, H. Tang, J. B. Webb, 于跃洋	2001	13
6	Selective Area Growth of GaN on SiC Substrate by Ammonia-Source MBE physica status solidi (a) ·H. Tang, J. A. Bardwell, J. B. Webb, S. Rolfe, S. Moisa, J. Fraser, S. Raymond, Leonid Tsynman	2001	5
7	Effect of Various Pre-Treatments on Ti/Al/Ti/Au Ohmic Contacts for AlGaN/GaN HFET Devices physica status solidi (a) ·J. A. Bardwell, Ying Liu, M. I. Abdul Aleem, Mohammed Bensalah, Pamela A. Marshall, H. Tang, J. B. Webb	2001	4
8	Defect reduction in GaN epilayers and HFET structures grown on (0001)sapphire by ammonia MBE Journal of Crystal Growth ·James B. Webb, H. Tang, J. A. Bardwell, S. Moisa, Haney Sami, 于跃洋	2001	19
9	High-speed AlGaN/GaN HFETs fabricated by wet etchingmesa isolation Electronics Letters ·Hassan Maher, Olivia Mezzetti, M.W. Dvorak, Pui Sum Yuen, C. R. Bolognesi, J. A. Bardwell, H. Tang, J. B. Webb	2000	6
10	A simple wet etch for GaN Journal of Electronic Materials ·J. A. Bardwell, Ian G. Foulds, J. B. Webb, H. Tang, J. Fraser, S. Moisa, S. Rolfe	1999	40
11	Thin anodic oxides formed on GaAs in aqueous solutions Journal of Applied Physics ·Patrik Schmuki, G. I. Sproule, J. A. Bardwell, Zhaoming Lu, M. J. Graham	1996	41
12	In Situ XANES Study of Galvanostatic Reduction of the Passive Film on Iron Journal of The Electrochemical Society ·Alison J. Davenport, J. A. Bardwell, Carissima M. Vitus	1995	40
13	The growth and stability of passive films Corrosion Science ·M. J. Graham, J. A. Bardwell, G. I. Sproule, D. F. Mitchell, B. MacDougall	1993	40
14	Resolution of uniaxial optical anisotropy in thin films Langmuir ·J. A. Bardwell, M. J. Dignam	1986	7
15	Routine method for the determination of the optical constants of liquids Analytica Chimica Acta ·J. A. Bardwell, M. J. Dignam	1986	14
16	MONOLAYER STUDIES OF 5‐(4‐CARB‐ OXYPHENYL)‐10,15,20‐TRITOLYL‐PORPHYRIN‐II. PHOTOVOLTAIC STUDY OF MULTILAYER SANDWICH CELLS* Photochemistry and Photobiology ·J. A. Bardwell, James R. Bolton	1984	17
17	The role of lead oxide as an inhibitor of combustion Combustion and Flame ·Yuliia Borysivna Remez, J. A. Bardwell	1965	1
18	The cool flame of methyl ethyl ketone Proceedings of the Royal Society of London A Mathematical and Physical Sciences ·J. A. Bardwell, Cyril Norman Hinshelwood	1951	19
19	The kinetics of the oxidation of gaseous methyl ethyl ketone. II Proceedings of the Royal Society of London A Mathematical and Physical Sciences ·J. A. Bardwell	1951	7
20	The kinetics of the oxidation of gaseous methyl ethyl ketone. I Proceedings of the Royal Society of London A Mathematical and Physical Sciences ·J. A. Bardwell, Cyril Norman Hinshelwood	1951	10

About J. A. Bardwell

J. A. Bardwell is a scholar working on Condensed Matter Physics, Metals and Alloys, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films and Materials Chemistry, having authored 129 papers that have together received 2.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (64 papers), Semiconductor materials and devices (47 papers), Ga2O3 and related materials (33 papers), Anodic Oxide Films and Nanostructures (19 papers), Corrosion Behavior and Inhibition (17 papers), ZnO doping and properties (15 papers), Hydrogen embrittlement and corrosion behaviors in metals (14 papers) and Semiconductor Quantum Structures and Devices (11 papers). The work is most often cited by research in Metals and Alloys (299 citations), Condensed Matter Physics (1.1k citations), Electronic, Optical and Magnetic Materials (662 citations), Materials Chemistry (1.2k citations) and Surfaces, Coatings and Films (154 citations). J. A. Bardwell has collaborated with scholars based in Canada, United States and United Kingdom. Frequent co-authors include H. Tang, B. MacDougall, S. Rolfe, J. B. Webb, W. N. Lennard, J. B. Webb, G. I. Sproule, M. J. Dignam, D. F. Mitchell and M. J. Graham. Their work appears in journals such as Journal of The Electrochemical Society, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

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