Junting Chen

814 total citations
43 papers, 570 citations indexed

About

Junting Chen is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Junting Chen has authored 43 papers receiving a total of 570 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Condensed Matter Physics, 26 papers in Electrical and Electronic Engineering and 20 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Junting Chen's work include GaN-based semiconductor devices and materials (29 papers), Ga2O3 and related materials (20 papers) and Semiconductor materials and devices (12 papers). Junting Chen is often cited by papers focused on GaN-based semiconductor devices and materials (29 papers), Ga2O3 and related materials (20 papers) and Semiconductor materials and devices (12 papers). Junting Chen collaborates with scholars based in China, Hong Kong and Australia. Junting Chen's co-authors include Kevin J. Chen, Mengyuan Hua, Zheyang Zheng, Vincent K. N. Lau, Chengcai Wang, Jin Wei, Li Zhang, James She, Jiabei He and J. Zhao and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and IEEE Transactions on Power Electronics.

In The Last Decade

Junting Chen

39 papers receiving 552 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Junting Chen China 15 404 398 187 85 79 43 570
Edward Yi Chang Taiwan 13 454 1.1× 182 0.5× 103 0.6× 419 4.9× 113 1.4× 55 713
Hanxing Wang China 15 841 2.1× 805 2.0× 288 1.5× 137 1.6× 117 1.5× 47 1.1k
Jianfeng Wang China 15 559 1.4× 103 0.3× 84 0.4× 296 3.5× 309 3.9× 66 928
V. Tsiantos Austria 11 64 0.2× 126 0.3× 235 1.3× 360 4.2× 131 1.7× 32 479
Sunghun Kim South Korea 11 67 0.2× 101 0.3× 51 0.3× 206 2.4× 221 2.8× 38 438
Zhuo Diao Japan 8 230 0.6× 94 0.2× 156 0.8× 377 4.4× 103 1.3× 25 537
P. Gawroński Poland 11 51 0.1× 77 0.2× 168 0.9× 257 3.0× 52 0.7× 55 509
Peng Du China 12 169 0.4× 285 0.7× 145 0.8× 133 1.6× 153 1.9× 44 536
L. L. Lev Russia 13 102 0.3× 105 0.3× 146 0.8× 94 1.1× 220 2.8× 31 504

Countries citing papers authored by Junting Chen

Since Specialization
Citations

This map shows the geographic impact of Junting Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Junting Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Junting Chen more than expected).

Fields of papers citing papers by Junting Chen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Junting Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Junting Chen. The network helps show where Junting Chen may publish in the future.

Co-authorship network of co-authors of Junting Chen

This figure shows the co-authorship network connecting the top 25 collaborators of Junting Chen. A scholar is included among the top collaborators of Junting Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Junting Chen. Junting Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chen, Junting, Haohao Chen, Junqiang Li, et al.. (2025). Suppression of Drain-Bias-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs With Voltage Seatbelt. IEEE Transactions on Electron Devices. 72(3). 1041–1046. 3 indexed citations
2.
Chen, Li, et al.. (2025). Luminescence properties of Eu3+-Doped double perovskite tungstate phosphors. Ceramics International. 51(25). 46633–46642. 1 indexed citations
3.
Chen, Junting, et al.. (2025). Normally-Off HEMT-Based Bipolar p-FET With Enhanced Conduction Capability. IEEE Transactions on Electron Devices. 72(6). 2884–2890.
4.
Zheng, Zheyang, Hang Liao, Sirui Feng, et al.. (2024). Vertical Leakage and Back-Gating Characteristics of GaN HEMTs Based on GaN/AlN Epitaxy on Off-Axis Conducting 4H-SiC. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 291–294.
5.
Zhang, J.X., J. Zhao, Junting Chen, & Mengyuan Hua. (2024). Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga2O3 thin film epitaxial growth. Applied Physics Letters. 124(2). 3 indexed citations
6.
Feng, Sirui, Zheyang Zheng, Yuru Wang, et al.. (2023). HyFET—A GaN/SiC Hybrid Field-Effect Transistor. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 1–4. 9 indexed citations
7.
Chen, Junting, Tao Chen, Chengcai Wang, et al.. (2023). Switching Performance of GaN $p$-FET-bridge (PFB-) HEMTs Studied with Mixed-mode TCAD Simulation. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 107–110. 3 indexed citations
8.
Wei, Jin, Zheyang Zheng, Gaofei Tang, et al.. (2023). GaN Power Integration Technology and Its Future Prospects. IEEE Transactions on Electron Devices. 71(3). 1365–1382. 51 indexed citations
9.
Chen, Junting, J. Zhao, Sirui Feng, et al.. (2023). Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride (Adv. Mater. 12/2023). Advanced Materials. 35(12). 1 indexed citations
10.
11.
Chen, Junting, et al.. (2022). A study on the use of mental state terms in natural contexts of Chinese children aged 3 to 6 years. Journal of Experimental Child Psychology. 222. 105470–105470. 1 indexed citations
12.
Xu, Han, Li Zhang, Tao Chen, et al.. (2022). Reliability Evaluation of p-GaN Gate HEMTs in Bootstrap Circuit. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 129–132. 4 indexed citations
13.
Zhong, Kailun, Han Xu, Song Yang, et al.. (2021). A Bootstrap Voltage Clamping Circuit for Dynamic VTH Characterization in Schottky-Type p-GaN Gate Power HEMT. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 39–42. 5 indexed citations
14.
Hua, Mengyuan, et al.. (2021). Impact of OFF-state Gate Bias on Dynamic RON of p-GaN Gate HEMT. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 47–50. 2 indexed citations
15.
Chen, Junting, Chengcai Wang, Jiali Jiang, & Mengyuan Hua. (2020). Investigation of Time-Dependent VTH Instability Under Reverse-bias Stress in Schottky Gate p-GaN HEMT. 37. 142–145. 3 indexed citations
16.
Hua, Mengyuan, Junting Chen, Chengcai Wang, et al.. (2020). E-mode p-GaN Gate HEMT with p-FET Bridge for Higher VTH and Enhanced VTH Stability. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 23.1.1–23.1.4. 27 indexed citations
17.
Hua, Mengyuan, Chengcai Wang, Junting Chen, et al.. (2020). Gate Reliability and VTH Stability Investigations of p-GaN HEMTs. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 1–4. 5 indexed citations
18.
Wang, Chengcai, Mengyuan Hua, Junting Chen, et al.. (2020). E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs. IEEE Electron Device Letters. 41(4). 545–548. 66 indexed citations
19.
Chen, Junting & Vincent K. N. Lau. (2014). Multi-stream iterative SVD for massive MIMO communication systems under time varying channels. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 3152–3156. 7 indexed citations
20.
Chen, Junting & Vincent K. N. Lau. (2012). Delay Analysis of Max-Weight Queue Algorithm for Time-Varying Wireless Ad hoc Networks—Control Theoretical Approach. IEEE Transactions on Signal Processing. 61(1). 99–108. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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