Shenghou Liu

1.7k citations

43 papers · 1.5k indexed · h-index 20

Condensed Matter Physics top 1%
Electrical and Electronic Engineering top 5%
Electronic, Optical and Magnetic Materials top 5%
Materials Chemistry
Atomic and Molecular Physics, and Optics top 10%

Co-authors: Kevin J. Chen Cheng Liu Shu Yang Yunyou Lu Zhikai Tang Qimeng Jiang Yong Cai Mengyuan Hua
Topics: GaN-based semiconductor devices and materials (43 papers)Ga2O3 and related materials (26 papers)Semiconductor materials and devices (24 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters Journal of Physics D Applied Physics IEEE Transactions on Electron Devices
Partner nations: Hong Kong China

In The Last Decade

Shenghou Liu

43 papers receiving 1.4k citations

Peers

Countries citing papers authored by Shenghou Liu

Since Specialization

Citations

This map shows the geographic impact of Shenghou Liu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shenghou Liu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shenghou Liu more than expected).

Fields of papers citing papers by Shenghou Liu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shenghou Liu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shenghou Liu. The network helps show where Shenghou Liu may publish in the future.

Co-authorship network of co-authors of Shenghou Liu

This figure shows the co-authorship network connecting the top 25 collaborators of Shenghou Liu. A scholar is included among the top collaborators of Shenghou Liu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shenghou Liu. Shenghou Liu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Channel-to-Channel Coupling in Normally-Off GaN Double-Channel MOS-HEMT 2017 ·IEEE Electron Device Letters ·Jin Wei,Jiacheng Lei,Xi Tang,Baikui Li,Shenghou Liu,Kevin J. Chen	28
2	Dynamic Gate Stress-Induced $V_{\text {TH}}$ Shift and Its Impact on Dynamic $R_{\mathrm {ON}}$ in GaN MIS-HEMTs 2015 ·IEEE Electron Device Letters ·Shu Yang,Yunyou Lu,Hanxing Wang,Shenghou Liu,Cheng Liu,Kevin J. Chen	40
3	Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier 2015 ·IEEE Electron Device Letters ·Cheng Liu,Shu Yang,Shenghou Liu,Zhikai Tang,Hanxing Wang,Qimeng Jiang,Kevin J. Chen	60
4	Gate stack engineering for GaN lateral power transistors 2015 ·Semiconductor Science and Technology ·Shu Yang,Shenghou Liu,Cheng Liu,Mengyuan Hua,Kevin J. Chen	7
5	Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor 2015 ·IEEE Electron Device Letters ·Jin Wei,Shenghou Liu,Baikui Li,Xi Tang,Yunyou Lu,Cheng Liu,Mengyuan Hua,Zhaofu Zhang,Gaofei Tang,Kevin J. Chen	95
6	Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess 2015 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Jin Wei,Shenghou Liu,Baikui Li,Xi Tang,Yunyou Lu,Cheng Liu,Mengyuan Hua,Zhaofu Zhang,Gaofei Tang,Kevin J. Chen	53
7	Al<sub>2</sub>O<sub>3</sub>/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer 2014 ·IEEE Electron Device Letters ·Shenghou Liu,Shu Yang,Zhikai Tang,Qimeng Jiang,Cheng Liu,Maojun Wang,Kevin J. Chen	105
8	Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes 2014 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Shu Yang,Shenghou Liu,Cheng Liu,Zhikai Tang,Yunyou Lu,Kevin J. Chen	34
9	Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors 2014 ·Applied Physics Letters ·Shu Yang,Shenghou Liu,Cheng Liu,Yunyou Lu,Kevin J. Chen	24
10	Degradation of transient OFF‐state leakage current in AlGaN/GaN HEMTs induced by ON‐state gate overdrive 2014 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Baikui Li,Qimeng Jiang,Shenghou Liu,Cheng Liu,Kevin J. Chen	17
11	Surface nitridation for improved dielectric/III‐nitride interfaces in GaN MIS‐HEMTs 2014 ·physica status solidi (a) ·Kevin J. Chen,Shu Yang,Zhikai Tang,Sen Huang,Yunyou Lu,Qimeng Jiang,Shenghou Liu,Cheng Liu,Baikui Li	47
12	High breakdown voltage InAlN/AlN/GaN HEMTs achieved by Schottky-Source technology 2013 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Qi Zhou,Wanjun Chen,Shenghou Liu,Bo Zhang,Zhihong Feng,Shujun Cai,Kevin J. Chen	5
13	5.3A/400V normally‐off AlGaN/GaN‐on‐Si MOS‐HEMT with high threshold voltage and large gate swing 2013 ·Electronics Letters ·Zhihua Dong,Shuxin Tan,Yong Cai,Hongwei Chen,Shenghou Liu,(unknown),Xue Lü,Guohao Yu,Yue Wang,Desheng Zhao,(unknown),Kevin J. Chen,Baoshun Zhang	14
14	High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiN_x Passivation 2013 ·IEEE Electron Device Letters ·Zhikai Tang,Sen Huang,Qimeng Jiang,Shenghou Liu,Cheng Liu,Kevin J. Chen	98
15	Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs 2012 ·IEEE Electron Device Letters ·Shenghou Liu,Yong Cai,Guodong Gu,Jinyan Wang,Chunhong Zeng,Wenhua Shi,Zhihong Feng,Hua Qin,Zhiqun Cheng,Kevin J. Chen,Baoshun Zhang	99
16	Enhanced Device Performance of AlGaN/GaN High Electron Mobility Transistors with Thermal Oxidation Treatment 2011 ·Japanese Journal of Applied Physics ·Shenghou Liu,Jinyan Wang,(unknown),(unknown),Zhihua Dong,Min Yu,Cheng P. Wen,Chunhong Zeng,Yong Cai,Baoshun Zhang,Fujun Xu,Jincheng Zhang,Bo Shen	4
17	Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure 2011 ·Chinese Physics Letters ·Shenghou Liu,Yong Cai,(unknown),Jinyan Wang,Chunhong Zeng,Wenhua Shi,Zhihong Feng,(unknown),(unknown),Pei Cheng,Hua Qin,Baoshun Zhang	4
18	Threshold voltage dependence on channel width in nano‐channel array AlGaN/GaN HEMTs 2011 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Shenghou Liu,Yong Cai,(unknown),Jinyan Wang,Chunhong Zeng,Wenhua Shi,Zhihong Feng,Jingjing Wang,(unknown),Cheng P. Wen,Hua Qin,Baoshun Zhang	1
19	AlGaN/GaN dual gate MOS HFET for power device applications 2010 ·(unknown),Jinyan Wang,Shenghou Liu,Zhihua Dong,Cheng P. Wen,Min Yu,Yong Cai,Baoshun Zhang	1
20	Analysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs 2010 ·Journal of Physics D Applied Physics ·(unknown),Jinyan Wang,Zhihua Dong,Shenghou Liu,Min Yu,Cheng P. Wen,Yilong Hao,Bo Shen,Yong Cai,Baoshun Zhang,Jincheng Zhang	9

About Shenghou Liu

Shenghou Liu is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 43 papers that have together received 1.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (43 papers), Ga2O3 and related materials (26 papers) and Semiconductor materials and devices (24 papers). The work is most often cited by research in Condensed Matter Physics (1.4k citations), Electronic, Optical and Magnetic Materials (796 citations) and Electrical and Electronic Engineering (1.2k citations). Shenghou Liu has collaborated with scholars based in Hong Kong and China. Frequent co-authors include Kevin J. Chen, Cheng Liu, Shu Yang, Yunyou Lu, Zhikai Tang, Qimeng Jiang, Yong Cai, Mengyuan Hua, Sen Huang and Zhihua Dong. Their work appears in journals such as Applied Physics Letters, Journal of Physics D Applied Physics and IEEE Transactions on Electron Devices.

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