H.C. Tuan

677 total citations
13 papers, 290 citations indexed

About

H.C. Tuan is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Infectious Diseases. According to data from OpenAlex, H.C. Tuan has authored 13 papers receiving a total of 290 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 5 papers in Condensed Matter Physics and 0 papers in Infectious Diseases. Recurrent topics in H.C. Tuan's work include Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Silicon Carbide Semiconductor Technologies (9 papers). H.C. Tuan is often cited by papers focused on Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Silicon Carbide Semiconductor Technologies (9 papers). H.C. Tuan collaborates with scholars based in Taiwan, Hong Kong and United States. H.C. Tuan's co-authors include F.-W. Yao, Kevin J. Chen, Jialong Yu, Yih‐Jyh Lin, Gaofei Tang, Risheng Su, Jiacheng Lei, King‐Yuen Wong, Alex Man Ho Kwan and C. H. Chern and has published in prestigious journals such as IEEE Electron Device Letters and Rare & Special e-Zone (The Hong Kong University of Science and Technology).

In The Last Decade

H.C. Tuan

12 papers receiving 285 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H.C. Tuan Taiwan 8 264 180 59 24 24 13 290
Jialong Yu Taiwan 5 199 0.8× 198 1.1× 66 1.1× 21 0.9× 26 1.1× 11 231
F.-W. Yao Taiwan 5 181 0.7× 179 1.0× 59 1.0× 20 0.8× 21 0.9× 8 211
Sung‐Jae Chang South Korea 10 236 0.9× 164 0.9× 88 1.5× 49 2.0× 47 2.0× 47 282
Donghyun Jin United States 6 257 1.0× 238 1.3× 86 1.5× 57 2.4× 41 1.7× 6 298
Kean Boon Lee United Kingdom 7 123 0.5× 128 0.7× 50 0.8× 37 1.5× 21 0.9× 17 153
Dongping Xiao Belgium 8 356 1.3× 281 1.6× 56 0.9× 59 2.5× 20 0.8× 28 399
Risheng Su Taiwan 3 166 0.6× 172 1.0× 57 1.0× 20 0.8× 20 0.8× 6 192
Shuichi Yagi Japan 8 206 0.8× 241 1.3× 121 2.1× 47 2.0× 55 2.3× 31 271
Amirhossein Aminbeidokhti Iran 13 392 1.5× 104 0.6× 60 1.0× 42 1.8× 37 1.5× 21 419
Sheng Jiang United Kingdom 8 98 0.4× 119 0.7× 52 0.9× 23 1.0× 28 1.2× 13 132

Countries citing papers authored by H.C. Tuan

Since Specialization
Citations

This map shows the geographic impact of H.C. Tuan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.C. Tuan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.C. Tuan more than expected).

Fields of papers citing papers by H.C. Tuan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H.C. Tuan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.C. Tuan. The network helps show where H.C. Tuan may publish in the future.

Co-authorship network of co-authors of H.C. Tuan

This figure shows the co-authorship network connecting the top 25 collaborators of H.C. Tuan. A scholar is included among the top collaborators of H.C. Tuan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H.C. Tuan. H.C. Tuan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

13 of 13 papers shown
1.
Tang, Gaofei, Risheng Su, F.-W. Yao, et al.. (2018). High-Capacitance-Density ${p}$ -GaN Gate Capacitors for High-Frequency Power Integration. IEEE Electron Device Letters. 39(9). 1362–1365. 34 indexed citations
2.
Tang, Gaofei, Zhaofu Zhang, Jiabei He, et al.. (2018). High-speed, high-reliability GaN power device with integrated gate driver. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 76–79. 66 indexed citations
3.
Tang, Gaofei, Alex Man Ho Kwan, King‐Yuen Wong, et al.. (2017). Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform. IEEE Electron Device Letters. 38(9). 1282–1285. 89 indexed citations
4.
Tsai, Chien‐Hung, Chunlei Wu, King‐Yuen Wong, et al.. (2016). GaN cascode performance optimization for high efficient power applications. 255–258. 9 indexed citations
5.
Lin, Yu‐Syuan, King‐Yuen Wong, G. P. Lansbergen, et al.. (2014). Improved trap-related characteristics on SiNx/AlGaN/GaN MISHEMTs with surface treatment. 293–296. 2 indexed citations
6.
7.
Yang, Shaohua, Chuan Cheng, Chengcheng Yao, et al.. (2012). 0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs. 401–404. 18 indexed citations
8.
9.
10.
Tsay, J., et al.. (2010). State-of-the-art device in high voltage power ICs with lowest on-state resistance. 20.8.1–20.8.4. 35 indexed citations
11.
Grudowski, Piotr, Cheng‐Hsien Wu, V. Kolagunta, et al.. (2006). 65nm SOI CMOS Technology for High Performance Microprocessor Application. 1–2. 1 indexed citations
12.
Thean, Aaron, L. Prabhu, Victor Vartanian, et al.. (2006). Uniaxial-biaxial stress hybridization for super-critical strained-si directly on insulator (SC-SSOI) PMOS with different channel orientations.. 51. 509–512. 16 indexed citations
13.
Mao, Runze, et al.. (2003). A new on-chip voltage regulator for high density CMOS DRAMs. 108–109.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026