Yunyou Lu

1.4k total citations
32 papers, 1.2k citations indexed

About

Yunyou Lu is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Yunyou Lu has authored 32 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Condensed Matter Physics, 27 papers in Electrical and Electronic Engineering and 16 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Yunyou Lu's work include GaN-based semiconductor devices and materials (29 papers), Semiconductor materials and devices (21 papers) and Ga2O3 and related materials (15 papers). Yunyou Lu is often cited by papers focused on GaN-based semiconductor devices and materials (29 papers), Semiconductor materials and devices (21 papers) and Ga2O3 and related materials (15 papers). Yunyou Lu collaborates with scholars based in Hong Kong, China and Taiwan. Yunyou Lu's co-authors include Kevin J. Chen, Shu Yang, Cheng Liu, Zhikai Tang, Qimeng Jiang, Sen Huang, Shenghou Liu, Xi Tang, Baikui Li and Yu‐Syuan Lin and has published in prestigious journals such as Applied Physics Letters, Optics Express and IEEE Transactions on Electron Devices.

In The Last Decade

Yunyou Lu

30 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Yunyou Lu Hong Kong	18	1.1k	950	651	229	175	32	1.2k
Shenghou Liu Hong Kong	20	1.4k 1.2×	1.2k 1.2×	796 1.2×	296 1.3×	242 1.4×	43	1.5k
Zhikai Tang Hong Kong	19	1.4k 1.2×	1.2k 1.2×	822 1.3×	293 1.3×	234 1.3×	34	1.5k
Ki‐Sik Im South Korea	18	937 0.8×	877 0.9×	422 0.6×	216 0.9×	137 0.8×	69	1.1k
Jong‐Bong Ha South Korea	12	668 0.6×	596 0.6×	418 0.6×	191 0.8×	122 0.7×	21	788
Y. Dora United States	9	818 0.7×	681 0.7×	426 0.7×	165 0.7×	156 0.9×	12	886
Minhan Mi China	19	936 0.8×	745 0.8×	430 0.7×	181 0.8×	225 1.3×	91	991
Yi Pei United States	20	1.1k 1.0×	883 0.9×	448 0.7×	230 1.0×	290 1.7×	57	1.2k
Takuma Nanjo Japan	16	790 0.7×	535 0.6×	450 0.7×	213 0.9×	201 1.1×	33	849
Dave Bour United States	8	653 0.6×	601 0.6×	312 0.5×	130 0.6×	153 0.9×	10	751

Countries citing papers authored by Yunyou Lu

Since Specialization

Citations

This map shows the geographic impact of Yunyou Lu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yunyou Lu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yunyou Lu more than expected).

Fields of papers citing papers by Yunyou Lu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yunyou Lu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yunyou Lu. The network helps show where Yunyou Lu may publish in the future.

Co-authorship network of co-authors of Yunyou Lu

This figure shows the co-authorship network connecting the top 25 collaborators of Yunyou Lu. A scholar is included among the top collaborators of Yunyou Lu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yunyou Lu. Yunyou Lu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lu, Yunyou, et al.. (2024). Polarization customization in all-dielectric terahertz polarizers. Optics Express. 32(27). 47783–47783.

Li, Xinnian, et al.. (2024). Magneto-inductive positioning network based on magnetic energy density. Measurement. 242. 115991–115991.

Yang, Song, Zhikai Tang, Mengyuan Hua, et al.. (2020). Investigation of SiN_x and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges. IEEE Journal of the Electron Devices Society. 8. 358–364. 27 indexed citations

Yang, Song, Zhikai Tang, Yunyou Lu, et al.. (2016). Role of shallow surface traps and polarization charges in nitride-based passivation for AlGaN/GaN heterojunction FET. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 85–88. 1 indexed citations

Tang, Xi, Baikui Li, Yunyou Lu, & Kevin J. Chen. (2016). On‐chip addressable Schottky‐on‐heterojunction light‐emitting diode arrays on AlGaN/GaN‐on‐Si platform. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 13(5-6). 365–368. 4 indexed citations

Hua, Mengyuan, Yunyou Lu, Shenghou Liu, et al.. (2016). Compatibility of AlN/SiN_xPassivation With LPCVD-SiN_xGate Dielectric in GaN-Based MIS-HEMT. IEEE Electron Device Letters. 37(3). 265–268. 35 indexed citations

Lu, Yunyou, Baikui Li, Xi Tang, et al.. (2015). Normally off Al<sub>2</sub>O<sub>3</sub>–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation. IEEE Transactions on Electron Devices. 62(3). 821–827. 18 indexed citations

Tang, Xi, Baikui Li, Yunyou Lu, et al.. (2015). III-Nitride transistors with photonic-ohmic drain for enhanced dynamic performances. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 35.3.1–35.3.4. 22 indexed citations

Yang, Shu, Yunyou Lu, Hanxing Wang, et al.. (2015). Dynamic Gate Stress-Induced $V_{\text {TH}}$ Shift and Its Impact on Dynamic $R_{\mathrm {ON}}$ in GaN MIS-HEMTs. IEEE Electron Device Letters. 37(2). 157–160. 40 indexed citations

10.

Wei, Jin, Shenghou Liu, Baikui Li, et al.. (2015). Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor. IEEE Electron Device Letters. 36(12). 1287–1290. 95 indexed citations

11.

Wei, Jin, Shenghou Liu, Baikui Li, et al.. (2015). Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 9.4.1–9.4.4. 53 indexed citations

12.

Yang, Shu, Shenghou Liu, Yunyou Lu, Cheng Liu, & Kevin J. Chen. (2015). AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs. IEEE Transactions on Electron Devices. 62(6). 1870–1878. 96 indexed citations

13.

Hua, Mengyuan, Cheng Liu, Shu Yang, et al.. (2015). 650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 241–244. 12 indexed citations

14.

Huang, Sen, Qimeng Jiang, Wei Ke, et al.. (2014). High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al<inf>2</inf>O<inf>3</inf> gate dielectric for high-performance normally-off GaN MIS-HEMTs. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 17.4.1–17.4.4. 38 indexed citations

15.

Yang, Shu, Shenghou Liu, Cheng Liu, et al.. (2014). Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 17.2.1–17.2.4. 34 indexed citations

16.

Li, Baikui, Xi Tang, Qimeng Jiang, et al.. (2014). Schottky-on-heterojunction optoelectronic functional devices realized on AlGaN/GaN-on-Si platform. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 11.4.1–11.4.4. 10 indexed citations

17.

Yang, Shu, Shenghou Liu, Cheng Liu, Yunyou Lu, & Kevin J. Chen. (2014). Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors. Applied Physics Letters. 105(22). 24 indexed citations

18.

Chen, Kevin J., Shu Yang, Zhikai Tang, et al.. (2014). Surface nitridation for improved dielectric/III‐nitride interfaces in GaN MIS‐HEMTs. physica status solidi (a). 212(5). 1059–1065. 47 indexed citations

19.

Lu, Yunyou, Shu Yang, Qimeng Jiang, et al.. (2013). Characterization of V_T‐instability in enhancement‐mode Al₂O₃‐AlGaN/GaN MIS‐HEMTs. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 10(11). 1397–1400. 65 indexed citations

20.

Tang, Zhikai, Qimeng Jiang, Yunyou Lu, et al.. (2013). 600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse. IEEE Electron Device Letters. 34(11). 1373–1375. 224 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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