Jiacheng Lei

796 citations

22 papers · 667 indexed · h-index 15

Co-authors: Kevin J. Chen Jin Wei Gaofei Tang Mengyuan Hua Zhaofu Zhang Zheyang Zheng Qingkai Qian Yuru Wang
Topics: GaN-based semiconductor devices and materials (19 papers)Silicon Carbide Semiconductor Technologies (14 papers)Semiconductor materials and devices (11 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: IEEE Transactions on Industrial Electronics IEEE Transactions on Electron Devices Nanotechnology
Partner nations: Hong Kong China Taiwan

In The Last Decade

Jiacheng Lei

22 papers receiving 650 citations

Peers

Countries citing papers authored by Jiacheng Lei

Since Specialization

Citations

This map shows the geographic impact of Jiacheng Lei's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jiacheng Lei with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jiacheng Lei more than expected).

Fields of papers citing papers by Jiacheng Lei

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jiacheng Lei. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jiacheng Lei. The network helps show where Jiacheng Lei may publish in the future.

Co-authorship network of co-authors of Jiacheng Lei

This figure shows the co-authorship network connecting the top 25 collaborators of Jiacheng Lei. A scholar is included among the top collaborators of Jiacheng Lei based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jiacheng Lei. Jiacheng Lei is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al₂O₃ Gate Dielectric and In Situ Si₃N₄-Cap Passivation 2020 ·IEEE Transactions on Electron Devices ·(unknown),Qi Zhou,(unknown),Jiacheng Lei,(unknown),(unknown),Peng Huang,Chunhua Zhou,Kevin J. Chen,Bo Zhang	12
2	GaN HEMT With Convergent Channel for Low Intrinsic Knee Voltage 2020 ·IEEE Electron Device Letters ·Zheyang Zheng,Wenjie Song,Jiacheng Lei,Qingkai Qian,Jin Wei,Mengyuan Hua,Song Yang,Li Zhang,Kevin J. Chen	22
3	A Novel Ultra-thin-barrier AlGaN/GaN MIS-gated Hybrid Anode Diode Featuring Improved High-temperature Reverse Blocking Characteristic 2020 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·(unknown),Qi Zhou,(unknown),(unknown),Jiacheng Lei,(unknown),Chunhua Zhou,Kevin J. Chen,Bo Zhang	1
4	Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor With Interdigital Built-in Schottky Barrier Diode 2019 ·IEEE Transactions on Electron Devices ·Jiacheng Lei,Jin Wei,Gaofei Tang,Qingkai Qian,Zhaofu Zhang,Mengyuan Hua,Zheyang Zheng,Kevin J. Chen	14
5	A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor 2019 ·Applied Physics Express ·Yuru Wang,Gang Lyu,Jin Wei,Zheyang Zheng,Jiacheng Lei,Wenjie Song,Long Zhang,Mengyuan Hua,Kevin J. Chen	10
6	2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current 2019 ·npj 2D Materials and Applications ·Qingkai Qian,Jiacheng Lei,Jin Wei,Zhaofu Zhang,Gaofei Tang,Kailun Zhong,Zheyang Zheng,Kevin J. Chen	41
7	Characterization of Dynamic $I_{\text{OFF}}$ in Schottky-Type $p$-GaN Gate HEMTs 2019 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Yuru Wang,Jin Wei,Song Yang,Jiacheng Lei,Mengyuan Hua,Kevin J. Chen	1
8	Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices 2019 ·IEEE Transactions on Industrial Electronics ·Yuru Wang,Gang Lyu,Jin Wei,Zheyang Zheng,Jiabei He,Jiacheng Lei,Kevin J. Chen	30
9	Charge-Modulated Schottky Barrier Lowering Effect in GaN Double-Channel Lateral Power SBDs with Gated Anode 2019 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Jiacheng Lei,Jin Wei,Gaofei Tang,Zhaofu Zhang,Qingkai Qian,Mengyuan Hua,Zheyang Zheng,Yuru Wang,Kevin J. Chen	3
10	Dynamic OFF-State Current (Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) in ${p}$ -GaN Gate HEMTs With an Ohmic Gate Contact 2018 ·IEEE Electron Device Letters ·Yuru Wang,Mengyuan Hua,Gaofei Tang,Jiacheng Lei,Zheyang Zheng,Jin Wei,Kevin J. Chen	35
11	Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT With Low Reverse Leakage Current and Low ON-State Resistance 2018 ·IEEE Electron Device Letters ·Jiacheng Lei,Jin Wei,Gaofei Tang,Zhaofu Zhang,Qingkai Qian,Zheyang Zheng,Mengyuan Hua,Kevin J. Chen	28
12	High-speed, high-reliability GaN power device with integrated gate driver 2018 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Gaofei Tang,(unknown),Zhaofu Zhang,Jiabei He,Jiacheng Lei,Risheng Su,F.-W. Yao,Yih‐Jyh Lin,Jialong Yu,(unknown),C. H. Chern,(unknown),H.C. Tuan,(unknown),Kevin J. Chen	66
13	Reverse-blocking AlGaN/GaN normally-off MIS-HEMT with double-recessed gated Schottky drain 2018 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Jiacheng Lei,Jin Wei,Gaofei Tang,Kevin J. Chen	11
14	Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform 2017 ·IEEE Electron Device Letters ·Gaofei Tang,Alex Man Ho Kwan,King‐Yuen Wong,Jiacheng Lei,Risheng Su,F.-W. Yao,Yih‐Jyh Lin,Jialong Yu,(unknown),H.C. Tuan,(unknown),Kevin J. Chen	89
15	650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode 2017 ·IEEE Electron Device Letters ·Jiacheng Lei,Jin Wei,Gaofei Tang,Zhaofu Zhang,Qingkai Qian,Zheyang Zheng,Mengyuan Hua,Kevin J. Chen	68
16	Enhanced dielectric deposition on single-layer MoS₂ with low damage using remote N₂ plasma treatment 2017 ·Nanotechnology ·Qingkai Qian,Zhaofu Zhang,Mengyuan Hua,Gaofei Tang,Jiacheng Lei,Feifei Lan,Yongkuan Xu,(unknown),Kevin J. Chen	35
17	Channel-to-Channel Coupling in Normally-Off GaN Double-Channel MOS-HEMT 2017 ·IEEE Electron Device Letters ·Jin Wei,Jiacheng Lei,Xi Tang,Baikui Li,Shenghou Liu,Kevin J. Chen	28
18	Remote N₂ plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS₂ MOSFET 2017 ·Applied Physics Express ·Qingkai Qian,Zhaofu Zhang,Mengyuan Hua,Jin Wei,Jiacheng Lei,Kevin J. Chen	2
19	An interdigitated GaN MIS-HEMT/SBD normally-off power switching device with low ON-resistance and low reverse conduction loss 2017 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Jiacheng Lei,Jin Wei,Gaofei Tang,Qingkai Qian,Mengyuan Hua,Zhaofu Zhang,Zheyang Zheng,Kevin J. Chen	30
20	Integration of LPCVD-SiN<inf>x</inf> gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime 2016 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Mengyuan Hua,Zhaofu Zhang,Jin Wei,Jiacheng Lei,Gaofei Tang,Kai Fu,Yong Cai,Baoshun Zhang,Kevin J. Chen	96

About Jiacheng Lei

Jiacheng Lei is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 22 papers that have together received 667 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (19 papers), Silicon Carbide Semiconductor Technologies (14 papers) and Semiconductor materials and devices (11 papers). The work is most often cited by research in Condensed Matter Physics (550 citations), Electronic, Optical and Magnetic Materials (272 citations) and Electrical and Electronic Engineering (540 citations). Jiacheng Lei has collaborated with scholars based in Hong Kong, China and Taiwan. Frequent co-authors include Kevin J. Chen, Jin Wei, Gaofei Tang, Mengyuan Hua, Zhaofu Zhang, Zheyang Zheng, Qingkai Qian, Yuru Wang, F.-W. Yao and H.C. Tuan. Their work appears in journals such as IEEE Transactions on Industrial Electronics, IEEE Transactions on Electron Devices and Nanotechnology.

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