Jiabei He

1.3k total citations
30 papers, 1.1k citations indexed

About

Jiabei He is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Jiabei He has authored 30 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Condensed Matter Physics, 17 papers in Electrical and Electronic Engineering and 11 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Jiabei He's work include GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (13 papers) and Ga2O3 and related materials (11 papers). Jiabei He is often cited by papers focused on GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (13 papers) and Ga2O3 and related materials (11 papers). Jiabei He collaborates with scholars based in Hong Kong, China and United States. Jiabei He's co-authors include Kevin J. Chen, Jin Wei, Zheyang Zheng, Gaofei Tang, Mengyuan Hua, Song Yang, Yuru Wang, Kailun Zhong, Zhaofu Zhang and Han Xu and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Industrial Electronics and IEEE Transactions on Power Electronics.

In The Last Decade

Jiabei He

29 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jiabei He Hong Kong 18 985 832 446 191 148 30 1.1k
Qingyun Xie United States 14 683 0.7× 618 0.7× 264 0.6× 115 0.6× 158 1.1× 42 808
D. Wellekens Belgium 22 955 1.0× 1.4k 1.7× 439 1.0× 254 1.3× 236 1.6× 87 1.6k
Edward Yi Chang Taiwan 13 182 0.2× 454 0.5× 103 0.2× 113 0.6× 419 2.8× 55 713
C. Zhang Japan 6 180 0.2× 353 0.4× 294 0.7× 138 0.7× 622 4.2× 7 714
K. Smith United States 9 176 0.2× 515 0.6× 278 0.6× 228 1.2× 684 4.6× 10 923
Subhadra Gupta United States 12 108 0.1× 330 0.4× 282 0.6× 280 1.5× 514 3.5× 47 742
Sandeepan DasGupta United States 17 260 0.3× 880 1.1× 108 0.2× 90 0.5× 81 0.5× 55 979
Indranil Chatterjee United States 14 306 0.3× 733 0.9× 121 0.3× 60 0.3× 51 0.3× 35 792
Christopher Safranski United States 12 172 0.2× 213 0.3× 152 0.3× 82 0.4× 402 2.7× 21 502

Countries citing papers authored by Jiabei He

Since Specialization
Citations

This map shows the geographic impact of Jiabei He's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jiabei He with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jiabei He more than expected).

Fields of papers citing papers by Jiabei He

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jiabei He. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jiabei He. The network helps show where Jiabei He may publish in the future.

Co-authorship network of co-authors of Jiabei He

This figure shows the co-authorship network connecting the top 25 collaborators of Jiabei He. A scholar is included among the top collaborators of Jiabei He based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jiabei He. Jiabei He is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
He, Jiabei, et al.. (2022). A mutual authentication scheme in VANET providing vehicular anonymity and tracking. Telecommunication Systems. 81(2). 175–190. 5 indexed citations
3.
He, Jiabei, Han Xu, Kailun Zhong, et al.. (2022). Gate Reliability of Schottky-Type p-GaN Gate HEMTs Under AC Positive Gate Bias Stress With a Switching Drain Bias. IEEE Electron Device Letters. 43(9). 1404–1407. 22 indexed citations
4.
Xu, Han, Zheyang Zheng, Li Zhang, et al.. (2022). Dynamic Interplays of Gate Junctions in Schottky-type p-GaN Gate Power HEMTs during Switching Operation. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 325–328. 13 indexed citations
5.
Li, Xiong, Jiabei He, Pandi Vijayakumar, Xiaosong Zhang, & Victor Chang. (2021). A Verifiable Privacy-Preserving Machine Learning Prediction Scheme for Edge-Enhanced HCPSs. IEEE Transactions on Industrial Informatics. 18(8). 5494–5503. 37 indexed citations
6.
He, Jiabei, et al.. (2021). Analysis of Image Generation by different Generator in GANs. Journal of Physics Conference Series. 1903(1). 12061–12061. 2 indexed citations
7.
He, Jiabei, Jin Wei, Yang Li, et al.. (2020). Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type p-GaN gate HEMTs. Applied Physics Letters. 116(22). 34 indexed citations
8.
He, Jiabei, Jin Wei, Zheyang Zheng, et al.. (2020). Low-Temperature Accelerated Gate Reliability of Schottky-type p-GaN Gate HEMTs. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 290–293. 5 indexed citations
9.
Xu, Han, Jin Wei, Ruiliang Xie, et al.. (2020). Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type p-GaN Gate Power HEMTs. IEEE Transactions on Power Electronics. 36(5). 5904–5914. 42 indexed citations
10.
Chen, Junting, Mengyuan Hua, Jiali Jiang, et al.. (2020). Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of p-GaN HEMT under Reverse-bias Stress. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 18–21. 15 indexed citations
11.
Zhang, Li, Zheyang Zheng, Song Yang, et al.. (2020). p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability. IEEE Electron Device Letters. 42(1). 22–25. 75 indexed citations
12.
Wei, Jin, Ruiliang Xie, Han Xu, et al.. (2019). Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs. IEEE Electron Device Letters. 40(4). 526–529. 151 indexed citations
13.
He, Jiabei, et al.. (2019). Temperature-Dependent Gate Degradation of $p$-GaN Gate HEMTs under Static and Dynamic Positive Gate Stress. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 295–298. 17 indexed citations
14.
He, Jiabei, Jin Wei, Song Yang, et al.. (2019). Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs. IEEE Transactions on Electron Devices. 66(8). 3453–3458. 108 indexed citations
15.
Hua, Mengyuan, Song Yang, Jin Wei, et al.. (2019). Reverse-Bias Stability and Reliability of Enhancement-mode GaN-based MIS-FET. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 1–4. 1 indexed citations
16.
Tang, Gaofei, Zhaofu Zhang, Jiabei He, et al.. (2018). High-speed, high-reliability GaN power device with integrated gate driver. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 76–79. 66 indexed citations
17.
Zhang, Zhaofu, Mengyuan Hua, Jiabei He, et al.. (2018). Ab initio study of impact of nitridation at amorphous-SiN x /GaN interface. Applied Physics Express. 11(8). 81003–81003. 13 indexed citations
18.
He, Jiabei, Gaofei Tang, & Kevin J. Chen. (2018). VTH Instability of p-GaN Gate HEMTs under Static and Dynamic Gate Stress. IEEE Electron Device Letters. 1–1. 123 indexed citations
19.
He, Jiabei, Hao‐Bo Li, Changhong Wang, et al.. (2015). Red-light emission induced by Mn-doped magnesium fluorogermanate. Journal of Physics D Applied Physics. 48(47). 475101–475101. 3 indexed citations
20.
He, Jiabei. (2010). An Automatic Panoramic Images Mosaic Algorithm with Precise Matching. Computer Engineering and Science. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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