N. Clément

570 total citations
15 papers, 479 citations indexed

About

N. Clément is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, N. Clément has authored 15 papers receiving a total of 479 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 6 papers in Biomedical Engineering and 6 papers in Materials Chemistry. Recurrent topics in N. Clément's work include Advancements in Semiconductor Devices and Circuit Design (6 papers), Nanowire Synthesis and Applications (6 papers) and Semiconductor materials and devices (6 papers). N. Clément is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (6 papers), Nanowire Synthesis and Applications (6 papers) and Semiconductor materials and devices (6 papers). N. Clément collaborates with scholars based in France, Japan and Belgium. N. Clément's co-authors include D. Vuillaume, Katsuhiko Nishiguchi, A. Lenain, Pascal Jacques, Akira Fujiwara, J.-F. Dufrêche, David Guérin, Harona Diarra, D. Tonneau and H. Dallaporta and has published in prestigious journals such as Nature Communications, Nano Letters and Applied Physics Letters.

In The Last Decade

N. Clément

15 papers receiving 468 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Clément France 12 253 213 200 129 107 15 479
Y. Liu Singapore 13 329 1.3× 328 1.5× 131 0.7× 44 0.3× 88 0.8× 35 519
Chien-Chuan Cheng Taiwan 15 248 1.0× 143 0.7× 435 2.2× 31 0.2× 126 1.2× 48 540
Milo Holt United States 9 259 1.0× 407 1.9× 195 1.0× 22 0.2× 63 0.6× 10 492
Ruey‐Shing Huang Taiwan 12 274 1.1× 44 0.2× 148 0.7× 40 0.3× 88 0.8× 28 387
Heike Bartsch Germany 13 338 1.3× 284 1.3× 183 0.9× 56 0.4× 22 0.2× 64 532
Bo Ram Kang South Korea 10 190 0.8× 310 1.5× 136 0.7× 73 0.6× 51 0.5× 22 433
András Kovács Germany 9 219 0.9× 132 0.6× 166 0.8× 16 0.1× 51 0.5× 35 332
Won Mok Kim South Korea 15 415 1.6× 295 1.4× 167 0.8× 23 0.2× 68 0.6× 41 600
Jeff Tsung‐Hui Tsai Taiwan 14 249 1.0× 352 1.7× 198 1.0× 42 0.3× 98 0.9× 37 566
Daniel Platz Austria 14 206 0.8× 78 0.4× 292 1.5× 34 0.3× 443 4.1× 34 620

Countries citing papers authored by N. Clément

Since Specialization
Citations

This map shows the geographic impact of N. Clément's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Clément with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Clément more than expected).

Fields of papers citing papers by N. Clément

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Clément. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Clément. The network helps show where N. Clément may publish in the future.

Co-authorship network of co-authors of N. Clément

This figure shows the co-authorship network connecting the top 25 collaborators of N. Clément. A scholar is included among the top collaborators of N. Clément based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Clément. N. Clément is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
Kim, Soo Hyeon, et al.. (2020). Noise suppression beyond the thermal limit with nanotransistor biosensors. Scientific Reports. 10(1). 12678–12678. 14 indexed citations
2.
Larrieu, Guilhem, et al.. (2017). Sub-15nm gate-all-around field effect transistors on vertical silicon nanowires. Solid-State Electronics. 130. 9–14. 27 indexed citations
3.
Larrieu, Guilhem, et al.. (2015). Vertical field effect transistor with sub-15nm gate-all-around on Si nanowire array. 5 indexed citations
4.
Clément, N., Katsuhiko Nishiguchi, J.-F. Dufrêche, et al.. (2013). Water Electrolysis and Energy Harvesting with Zero-Dimensional Ion-Sensitive Field-Effect Transistors. Nano Letters. 13(8). 3903–3908. 19 indexed citations
5.
Clément, N., G. Patriarche, Kacem Smaali, et al.. (2011). Large Array of Sub‐10‐nm Single‐Grain Au Nanodots for use in Nanotechnology. Small. 7(18). 2607–2613. 27 indexed citations
6.
Clément, N., Katsuhiko Nishiguchi, J.-F. Dufrêche, et al.. (2011). A silicon nanowire ion-sensitive field-effect transistor with elementary charge sensitivity. Applied Physics Letters. 98(1). 70 indexed citations
7.
Clément, N., Katsuhiko Nishiguchi, Akira Fujiwara, & D. Vuillaume. (2010). One-by-one trap activation in silicon nanowire transistors. Nature Communications. 1(1). 92–92. 75 indexed citations
8.
Bettaieb, Mohamed Ben, et al.. (2009). Interests and limitations of nanoindentation for bulk multiphase material identification: Application to the β phase of Ti-5553. Acta Materialia. 57(17). 5186–5195. 46 indexed citations
9.
Clément, N., et al.. (2007). 1fγtunnel current noise through Si-bound alkyl monolayers. Physical Review B. 76(20). 23 indexed citations
10.
Clément, N., A. Lenain, & Pascal Jacques. (2007). Mechanical property optimization via microstructural control of new metastable beta titanium alloys. JOM. 59(1). 50–53. 90 indexed citations
11.
Lenain, A., N. Clément, M. Véron, & Pascal Jacques. (2005). Characterization of the α Phase Nucleation in a Two-Phase Metastable β Titanium Alloy. Journal of Materials Engineering and Performance. 14(6). 722–727. 20 indexed citations
12.
Tonneau, D., N. Clément, S. Nitsche, et al.. (2004). Light-induced reversible conductivity changes in silicon-on-insulator nanowires. Applied Physics Letters. 85(22). 5272–5274. 10 indexed citations
13.
Clément, N., et al.. (2003). High aspect ratio nano-oxidation of silicon with noncontact atomic force microscopy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 21(6). 2348–2351. 11 indexed citations
14.
Clément, N., D. Tonneau, H. Dallaporta, et al.. (2003). Current-induced structural modification of silicon-on-insulator nanocircuits. Applied Physics Letters. 82(11). 1727–1729. 12 indexed citations
15.
Clément, N., D. Tonneau, H. Dallaporta, et al.. (2002). Electronic transport properties of single-crystal silicon nanowires fabricated using an atomic force microscope. Physica E Low-dimensional Systems and Nanostructures. 13(2-4). 999–1002. 30 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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