F. Venturi

698 total citations
31 papers, 419 citations indexed

About

F. Venturi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, F. Venturi has authored 31 papers receiving a total of 419 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 1 paper in Computational Mechanics. Recurrent topics in F. Venturi's work include Semiconductor materials and devices (30 papers), Advancements in Semiconductor Devices and Circuit Design (29 papers) and Silicon Carbide Semiconductor Technologies (15 papers). F. Venturi is often cited by papers focused on Semiconductor materials and devices (30 papers), Advancements in Semiconductor Devices and Circuit Design (29 papers) and Silicon Carbide Semiconductor Technologies (15 papers). F. Venturi collaborates with scholars based in Italy, United States and Switzerland. F. Venturi's co-authors include B. Riccò, E. Sangiorgi, Carlo Jacoboni, M.R. Pinto, R. Brunetti, C. Fiegna, E. Sangiorgi, Randall K. Smith, A. Abramo and A. Ghetti and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

F. Venturi

23 papers receiving 398 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
F. Venturi Italy	11	408	89	27	26	8	31	419
S. Jallepalli United States	10	474 1.2×	130 1.5×	36 1.3×	19 0.7×	8 1.0×	28	494
K. Kato Japan	11	364 0.9×	83 0.9×	34 1.3×	24 0.9×	14 1.8×	24	377
Y. Taur United States	10	239 0.6×	50 0.6×	18 0.7×	36 1.4×	13 1.6×	19	264
I. Post United Kingdom	9	354 0.9×	89 1.0×	33 1.2×	30 1.2×	3 0.4×	20	360
D. Marchesan Canada	10	475 1.2×	41 0.5×	32 1.2×	82 3.2×	4 0.5×	13	479
L.D. Garrett United States	17	681 1.7×	167 1.9×	9 0.3×	22 0.8×	9 1.1×	65	699
P. Scheer France	11	374 0.9×	53 0.6×	22 0.8×	35 1.3×	3 0.4×	43	390
H. Hazama Japan	10	302 0.7×	59 0.7×	35 1.3×	23 0.9×	26 3.3×	28	334
J.V. Collins United Kingdom	9	516 1.3×	268 3.0×	12 0.4×	13 0.5×	6 0.8×	26	541
M.C. Maliepaard Canada	8	432 1.1×	39 0.4×	9 0.3×	92 3.5×	6 0.8×	13	434

Countries citing papers authored by F. Venturi

Since Specialization

Citations

This map shows the geographic impact of F. Venturi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Venturi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Venturi more than expected).

Fields of papers citing papers by F. Venturi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Venturi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Venturi. The network helps show where F. Venturi may publish in the future.

Co-authorship network of co-authors of F. Venturi

This figure shows the co-authorship network connecting the top 25 collaborators of F. Venturi. A scholar is included among the top collaborators of F. Venturi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Venturi. F. Venturi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Dutton, R.W., et al.. (2005). An Efficient Impact Ionization Model For Silicon Monte Carlo Simulation. 21. 42–43.

Ghetti, A., L. Selmi, E. Sangiorgi, A. Abramo, & F. Venturi. (2002). A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures. 363–366. 1 indexed citations

Ghetti, A., Md Ashraful Alam, J. Bude, & F. Venturi. (2002). Assessment of quantum yield experiments via full band Monte Carlo simulations. 873–876. 6 indexed citations

Fiegna, C., F. Filicori, G. Vannini, & F. Venturi. (2002). Modeling the effects of traps on the I-V characteristics of GaAs MESFETs. ed 41. 773–776. 5 indexed citations

Abramo, A., C. Fiegna, & F. Venturi. (2002). Hot carrier effects in short MOSFETs at low applied voltages. 301–304. 14 indexed citations

Venturi, F., A. Abramo, E. Sangiorgi, et al.. (2002). An isotropic best-fitting band model for electron and hole transport in silicon. 503–506.

Abramo, A., J. Bude, F. Venturi, & M.R. Pinto. (2002). Mobility simulation in Si/SiGe heterostructure FETs. 731–734.

Boni, Andrea, et al.. (2002). A novel coding scheme for the ROM of parallel ADCs, featuring reduced conversion noise in the case of single bubbles in the thermometer code. 2. 271–274. 20 indexed citations

Fiegna, C., E. Sangiorgi, F. Venturi, A. Abramo, & B. Riccò. (2002). Modeling of high energy electrons in n-MOSFETs. 119–122.

10.

Zhou, Yu, et al.. (2002). Modeling of bias-stress dependent transconductance degradation of submicron MOSFETs. 459–462.

11.

Fiegna, C., F. Venturi, E. Sangiorgi, & B. Riccò. (2002). Efficient non-local modeling of the electron energy distribution in sub-micron MOSFETs. 451–454.

12.

Abramo, A., J. Bude, F. Venturi, & M.R. Pinto. (1996). Mobility simulation of a novel Si/SiGe FET structure. IEEE Electron Device Letters. 17(2). 59–61. 7 indexed citations

13.

Abramo, A., R. Brunetti, Carlo Jacoboni, F. Venturi, & E. Sangiorgi. (1994). A multiband Monte Carlo approach to Coulomb interaction for device analysis. Journal of Applied Physics. 76(10). 5786–5794. 15 indexed citations

14.

Abramo, A., F. Venturi, E. Sangiorgi, J.M. Higman, & B. Riccò. (1993). A numerical method to compute isotropic band models from anisotropic semiconductor band structures. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 12(9). 1327–1336. 21 indexed citations

15.

Fiegna, C., et al.. (1990). Simulation of EPROM writing. European Solid-State Device Research Conference. 527–530. 1 indexed citations

16.

Venturi, F., E. Sangiorgi, R. Brunetti, Carlo Jacoboni, & B. Riccò. (1989). Monte Carlo simulation of electron heating in scaled deep submicron MOSfets. IRIS UNIMORE (University of Modena and Reggio Emilia). 485–488. 1 indexed citations

17.

Sangiorgi, E., B. Riccò, & F. Venturi. (1988). MOS/sup 2/: an efficient MOnte Carlo Simulator for MOS devices. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 7(2). 259–271. 51 indexed citations

18.

Sangiorgi, E., M.R. Pinto, F. Venturi, & Wolf Fïchtner. (1988). A hot-carrier analysis of submicrometer MOSFET's. IEEE Electron Device Letters. 9(1). 13–16. 20 indexed citations

19.

Selmi, L., F. Venturi, E. Sangiorgi, & B. Riccò. (1987). Three Dimensional Distribution of Latch-Up Current in Scaled CMOS Structures. Institutional Research Information System (University of Udine). 783–786. 1 indexed citations

20.

Venturi, F., et al.. (1987). A Monte Carlo Approach to the Study of the Drift-Diffusion Transport Model. European Solid-State Device Research Conference. 173–176. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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