A. Godoy

2.5k total citations
149 papers, 1.9k citations indexed

About

A. Godoy is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A. Godoy has authored 149 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 131 papers in Electrical and Electronic Engineering, 29 papers in Biomedical Engineering and 28 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A. Godoy's work include Advancements in Semiconductor Devices and Circuit Design (110 papers), Semiconductor materials and devices (104 papers) and Silicon Carbide Semiconductor Technologies (28 papers). A. Godoy is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (110 papers), Semiconductor materials and devices (104 papers) and Silicon Carbide Semiconductor Technologies (28 papers). A. Godoy collaborates with scholars based in Spain, Germany and United Kingdom. A. Godoy's co-authors include F. Gámiz, Francisco G. Ruiz, J.B. Roldán, Luca Donetti, Noel Rodríguez, C. Sampedro, J. A. Jiménez-Tejada, J. A. López‐Villanueva, David Jiménez and I. M. Tienda-Luna and has published in prestigious journals such as SHILAP Revista de lepidopterología, Nano Letters and Physical review. B, Condensed matter.

In The Last Decade

A. Godoy

139 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Godoy Spain 23 1.5k 418 398 214 79 149 1.9k
Bipul C. Paul United States 29 2.8k 1.8× 467 1.1× 454 1.1× 175 0.8× 48 0.6× 76 3.1k
Thomas Rueckes United States 9 695 0.5× 479 1.1× 1.0k 2.5× 457 2.1× 40 0.5× 22 1.5k
Mindy D. Bishop United States 8 587 0.4× 269 0.6× 523 1.3× 103 0.5× 32 0.4× 9 930
Andrea Fasoli United Kingdom 20 631 0.4× 471 1.1× 438 1.1× 195 0.9× 35 0.4× 46 957
Tathagata Srimani United States 9 576 0.4× 265 0.6× 526 1.3× 104 0.5× 30 0.4× 20 927
Jia Si China 15 528 0.3× 313 0.7× 695 1.7× 144 0.7× 26 0.3× 25 1.0k
Mahmoud Rasras United States 29 2.1k 1.4× 382 0.9× 468 1.2× 838 3.9× 21 0.3× 150 2.5k
Ruohe Yao China 16 679 0.4× 170 0.4× 425 1.1× 61 0.3× 78 1.0× 107 1.0k
Yiyang Luo China 21 1.0k 0.7× 167 0.4× 231 0.6× 832 3.9× 44 0.6× 92 1.5k

Countries citing papers authored by A. Godoy

Since Specialization
Citations

This map shows the geographic impact of A. Godoy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Godoy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Godoy more than expected).

Fields of papers citing papers by A. Godoy

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Godoy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Godoy. The network helps show where A. Godoy may publish in the future.

Co-authorship network of co-authors of A. Godoy

This figure shows the co-authorship network connecting the top 25 collaborators of A. Godoy. A scholar is included among the top collaborators of A. Godoy based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Godoy. A. Godoy is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Grundmann, Annika, Ke Ran, Enrique G. Marín, et al.. (2025). Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications. Small Science. 5(5). 2400523–2400523. 6 indexed citations
3.
Marín, Enrique G., et al.. (2025). Modeling of van der Waals-Based Photovoltaic Devices. IEEE Journal of the Electron Devices Society. 13. 219–227.
4.
Ran, Ke, Janghyun Jo, H. Kalisch, et al.. (2025). Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices. Nano Letters. 25(33). 12455–12462. 1 indexed citations
5.
6.
Marín, Enrique G., et al.. (2024). A Flexible Laser-Induced Graphene Memristor with Volatile Switching for Neuromorphic Applications. ACS Applied Materials & Interfaces. 16(37). 49724–49732. 10 indexed citations
7.
Ruiz, Francisco G., et al.. (2023). Exploiting Ambipolarity in Graphene Field‐Effect Transistors for Novel Designs on High‐Frequency Analog Electronics. Small. 19(49). e2303595–e2303595. 10 indexed citations
8.
Marín, Enrique G., et al.. (2023). Reconfigurable frequency multipliers based on graphene field-effect transistors. SHILAP Revista de lepidopterología. 18(1). 123–123. 4 indexed citations
9.
Marín, Enrique G., et al.. (2023). Variability Assessment of the Performance of MoS2-Based BioFETs. Chemosensors. 11(1). 57–57. 1 indexed citations
10.
Gómez, María del Mar Pérez, et al.. (2023). Investigation of the Optical Properties of Indium Tin Oxide Thin Films by Double Integration Sphere Combined with the Numerical IAD Method. Materials. 16(4). 1425–1425. 3 indexed citations
11.
Santos, Hernán, et al.. (2021). Multi-scale modeling of 2D GaSe FETs with strained channels. Nanotechnology. 33(10). 105201–105201. 4 indexed citations
12.
Marín, Enrique G., Francisco G. Ruiz, A. Godoy, et al.. (2019). Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances. npj 2D Materials and Applications. 3(1). 16 indexed citations
13.
Medina-Bailón, Cristina, J. L. Padilla, Toufik Sadi, et al.. (2019). Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices. IEEE Transactions on Electron Devices. 66(3). 1145–1152. 6 indexed citations
14.
Riazimehr, Sarah, Satender Kataria, Stefan Wagner, et al.. (2018). High Responsivity and Quantum Efficiency of Graphene/Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions. ACS Photonics. 6(1). 107–115. 68 indexed citations
15.
Medina-Bailón, Cristina, J. L. Padilla, C. Sampedro, et al.. (2018). Source-to-Drain Tunneling Analysis in FDSOI, DGSOI, and FinFET Devices by Means of Multisubband Ensemble Monte Carlo. IEEE Transactions on Electron Devices. 65(11). 4740–4746. 9 indexed citations
16.
Vecil, Francesco, José M. Mantas, María J. Cáceres, et al.. (2014). A parallel deterministic solver for the Schrödinger–Poisson–Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo. Computers & Mathematics with Applications. 67(9). 1703–1721. 6 indexed citations
17.
Moreno, E., J.B. Roldán, Francisco G. Ruiz, et al.. (2011). An Inversion-Charge Analytical Model for Square Gate-All-Around MOSFETs. IEEE Transactions on Electron Devices. 58(9). 2854–2861. 11 indexed citations
18.
Tienda-Luna, I. M., Francisco G. Ruiz, A. Godoy, & F. Gámiz. (2009). The influence of orientation and strain on the transport properties of SOI trigate nMOSFETs. 319–322. 1 indexed citations
19.
Gámiz, F., A. Godoy, C. Sampedro, Noel Rodríguez, & Francisco G. Ruiz. (2007). Monte Carlo simulation of low-field mobility in strained double gate SOI transistors. Journal of Computational Electronics. 7(3). 205–208. 3 indexed citations
20.
Roldán, J.B., F. Gámiz, J. A. López‐Villanueva, P. Cartujo, & A. Godoy. (2001). Strained-Si on Si Ge MOSFET Inversion Layer Centroid Modeling. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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