Xingsheng Wang

2.3k total citations
130 papers, 1.8k citations indexed

About

Xingsheng Wang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Hardware and Architecture. According to data from OpenAlex, Xingsheng Wang has authored 130 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 111 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 10 papers in Hardware and Architecture. Recurrent topics in Xingsheng Wang's work include Advancements in Semiconductor Devices and Circuit Design (73 papers), Semiconductor materials and devices (69 papers) and Ferroelectric and Negative Capacitance Devices (33 papers). Xingsheng Wang is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (73 papers), Semiconductor materials and devices (69 papers) and Ferroelectric and Negative Capacitance Devices (33 papers). Xingsheng Wang collaborates with scholars based in China, United Kingdom and United States. Xingsheng Wang's co-authors include Asen Asenov, B. Cheng, A. R. Brown, Campbell Millar, Xiangshui Miao, Gareth Roy, A. Asenov, Chengxu Wang, Kan‐Hao Xue and Andrew R. Brown and has published in prestigious journals such as Applied Physics Letters, Chemistry of Materials and Scientific Reports.

In The Last Decade

Xingsheng Wang

121 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Xingsheng Wang China 21 1.5k 199 191 139 86 130 1.8k
Sangho Shin South Korea 23 1.6k 1.0× 160 0.8× 232 1.2× 72 0.5× 535 6.2× 81 1.9k
Jinshun Bi China 15 849 0.6× 332 1.7× 70 0.4× 55 0.4× 45 0.5× 122 1.0k
Yangbin Zhu China 16 770 0.5× 550 2.8× 216 1.1× 61 0.4× 175 2.0× 34 1.0k
Myounggon Kang South Korea 23 1.5k 1.0× 209 1.1× 120 0.6× 109 0.8× 217 2.5× 159 1.8k
Meng‐Hsueh Chiang Taiwan 18 1.4k 0.9× 411 2.1× 158 0.8× 37 0.3× 91 1.1× 95 1.6k
Akhil Dodda United States 13 623 0.4× 346 1.7× 148 0.8× 177 1.3× 185 2.2× 14 875
Ivan Sanchez Esqueda United States 20 1.1k 0.7× 413 2.1× 86 0.5× 83 0.6× 92 1.1× 67 1.3k
Mainul Hossain Bangladesh 21 522 0.3× 333 1.7× 429 2.2× 19 0.1× 29 0.3× 62 1.2k
V. Re Italy 23 1.5k 1.0× 66 0.3× 530 2.8× 48 0.3× 26 0.3× 218 2.0k

Countries citing papers authored by Xingsheng Wang

Since Specialization
Citations

This map shows the geographic impact of Xingsheng Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Xingsheng Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Xingsheng Wang more than expected).

Fields of papers citing papers by Xingsheng Wang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Xingsheng Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Xingsheng Wang. The network helps show where Xingsheng Wang may publish in the future.

Co-authorship network of co-authors of Xingsheng Wang

This figure shows the co-authorship network connecting the top 25 collaborators of Xingsheng Wang. A scholar is included among the top collaborators of Xingsheng Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Xingsheng Wang. Xingsheng Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Li, Nan, et al.. (2025). ISARA: An Island-Style Systolic Array Reconfigurable Accelerator Based on Memristors for Deep Neural Networks. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 33(4). 963–975. 2 indexed citations
3.
Li, Nan, et al.. (2025). Fast IR-Drop Model of Memristor Crossbars and Circuit Compensation Utilizing DTCO. IEEE Transactions on Electron Devices. 72(8). 4063–4069.
4.
Miao, Xiangshui, et al.. (2024). Multi-order Differential Neural Network for TCAD Simulation of the Semiconductor Devices. 1–6. 1 indexed citations
7.
Wang, Chengxu, et al.. (2023). Modeling and physical mechanism analysis of the effect of a polycrystalline-ferroelectric gate on FE-FinFETs. Science China Information Sciences. 66(5).
8.
Wang, Chengxu, et al.. (2023). Mitigate IR-Drop Effect by Modulating Neuron Activation Functions for Implementing Neural Networks on Memristor Crossbar Arrays. IEEE Electron Device Letters. 44(8). 1280–1283. 9 indexed citations
9.
Asenov, Asen, et al.. (2022). Improved compact model extraction of statistical variability in 5 nm nanosheet transistors and applied to SRAM simulations. Semiconductor Science and Technology. 37(9). 95010–95010. 2 indexed citations
10.
Lin, Qi, Jun‐Hui Yuan, Long Liu, et al.. (2021). 10 MA cm−2 current density in nanoscale conductive bridge threshold switching selector via densely localized cation sources. Journal of Materials Chemistry C. 9(41). 14799–14807. 5 indexed citations
11.
Huo, Qiang, Zhenhua Wu, Xingsheng Wang, et al.. (2020). Physics-Based Device-Circuit Cooptimization Scheme for 7-nm Technology Node SRAM Design and Beyond. IEEE Transactions on Electron Devices. 67(3). 907–914. 32 indexed citations
12.
Huo, Qiang, Zhenhua Wu, Weixing Huang, et al.. (2020). A Novel General Compact Model Approach for 7-nm Technology Node Circuit Optimization From Device Perspective and Beyond. IEEE Journal of the Electron Devices Society. 8. 295–301. 15 indexed citations
13.
Georgiev, Vihar, et al.. (2016). Influence of quantum confinement effects and device electrostatic driven performance in ultra-scaled SixGe1−x nanowire transistors. ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam). 3. 234–237. 4 indexed citations
14.
Asenov, Asen, B. Cheng, Xingsheng Wang, et al.. (2014). Variability Aware Simulation Based Design- Technology Cooptimization (DTCO) Flow in 14 nm FinFET/SRAM Cooptimization. IEEE Transactions on Electron Devices. 62(6). 1682–1690. 53 indexed citations
15.
Cheng, B., Xingsheng Wang, A. R. Brown, et al.. (2013). SRAM device and cell co-design considerations in a 14nm SOI FinFET technology. ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam). 2339–2342. 5 indexed citations
16.
Wang, Xingsheng, Alexander L. Brown, B. Cheng, & Asen Asenov. (2012). RTS amplitude distribution in 20nm SOI finFETs subject to statistical variability. ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam). 19 indexed citations
17.
Cheng, B., Xingsheng Wang, Andrew R. Brown, C. Millar, & Asen Asenov. (2012). Statistical TCAD based PDK development for a FinFET technology at 14nm technology node. ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam). 7 indexed citations
18.
Benbakhti, B., Ka‐Hou Chan, K. Kálna, et al.. (2011). Numerical analysis of the new Implant-Free Quantum-Well CMOS: DualLogic approach. Solid-State Electronics. 63(1). 14–18. 3 indexed citations
19.
Cheng, B., Daryoosh Dideban, C. Millar, et al.. (2010). Capturing intrinsic parameter fluctuations using the PSP compact model. Design, Automation, and Test in Europe. 650–653. 1 indexed citations
20.
Cheng, B., Daryoosh Dideban, Campbell Millar, et al.. (2010). Benchmarking statistical compact modeling strategies for capturing device intrinsic parameter fluctuations in BSIM4 and PSP. IEEE Design & Test of Computers. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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