Per‐Erik Hellström

1.0k total citations
104 papers, 811 citations indexed

About

Per‐Erik Hellström is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Per‐Erik Hellström has authored 104 papers receiving a total of 811 indexed citations (citations by other indexed papers that have themselves been cited), including 101 papers in Electrical and Electronic Engineering, 28 papers in Atomic and Molecular Physics, and Optics and 16 papers in Biomedical Engineering. Recurrent topics in Per‐Erik Hellström's work include Semiconductor materials and devices (71 papers), Advancements in Semiconductor Devices and Circuit Design (65 papers) and Semiconductor materials and interfaces (25 papers). Per‐Erik Hellström is often cited by papers focused on Semiconductor materials and devices (71 papers), Advancements in Semiconductor Devices and Circuit Design (65 papers) and Semiconductor materials and interfaces (25 papers). Per‐Erik Hellström collaborates with scholars based in Sweden, United Kingdom and Germany. Per‐Erik Hellström's co-authors include Mikael Östling, B. Gunnar Malm, E. Dentoni Litta, Henry H. Radamson, Martin von Haartman, Carl‐Mikael Zetterling, S. Hou, Christoph Henkel, Shi‐Li Zhang and Jun Lü and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Per‐Erik Hellström

100 papers receiving 757 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Per‐Erik Hellström Sweden 16 725 204 168 154 41 104 811
Qinghui Shao United States 11 388 0.5× 210 1.0× 149 0.9× 479 3.1× 64 1.6× 45 740
Ha Sul Kim United States 10 589 0.8× 245 1.2× 319 1.9× 262 1.7× 17 0.4× 21 749
Hilal Cansizoglu United States 14 484 0.7× 145 0.7× 245 1.5× 292 1.9× 26 0.6× 46 678
H. Aharoni Israel 18 824 1.1× 283 1.4× 201 1.2× 527 3.4× 41 1.0× 84 930
Fanlu Zhang Australia 11 359 0.5× 171 0.8× 246 1.5× 159 1.0× 28 0.7× 20 484
Tymoteusz Ciuk Poland 16 387 0.5× 169 0.8× 143 0.9× 459 3.0× 22 0.5× 47 660
P. Hesto France 15 532 0.7× 354 1.7× 84 0.5× 143 0.9× 59 1.4× 62 688
N. L. Dmitruk Ukraine 13 318 0.4× 249 1.2× 183 1.1× 232 1.5× 24 0.6× 113 562
V. Loup France 15 752 1.0× 228 1.1× 191 1.1× 213 1.4× 21 0.5× 57 812
S. V. S. Nageswara Rao India 16 363 0.5× 111 0.5× 160 1.0× 300 1.9× 27 0.7× 59 636

Countries citing papers authored by Per‐Erik Hellström

Since Specialization
Citations

This map shows the geographic impact of Per‐Erik Hellström's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Per‐Erik Hellström with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Per‐Erik Hellström more than expected).

Fields of papers citing papers by Per‐Erik Hellström

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Per‐Erik Hellström. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Per‐Erik Hellström. The network helps show where Per‐Erik Hellström may publish in the future.

Co-authorship network of co-authors of Per‐Erik Hellström

This figure shows the co-authorship network connecting the top 25 collaborators of Per‐Erik Hellström. A scholar is included among the top collaborators of Per‐Erik Hellström based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Per‐Erik Hellström. Per‐Erik Hellström is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Delmas, M., et al.. (2023). Optical concentration in fully delineated mid-wave infrared T2SL detectors arrays. Applied Physics Letters. 123(18). 1 indexed citations
2.
Hou, S., et al.. (2020). A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C. IEEE Journal of the Electron Devices Society. 8. 116–121. 15 indexed citations
3.
Legallais, Maxime, Per‐Erik Hellström, Mireille Mouis, et al.. (2019). Wafer-scale HfO2 encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment. Nanotechnology. 30(18). 184002–184002. 10 indexed citations
4.
Asadollahi, Ali, et al.. (2018). Germanium on Insulator Fabrication for Monolithic 3-D Integration. IEEE Journal of the Electron Devices Society. 6. 588–593. 8 indexed citations
5.
Hellström, Per‐Erik, et al.. (2018). Monolithic Wafer Scale Integration of Silicon Nanoribbon Sensors with CMOS for Lab-on-Chip Application. Micromachines. 9(11). 544–544. 3 indexed citations
6.
Hellström, Per‐Erik, et al.. (2017). The impact of atomic layer depositions on high quality Ge/GeO<inf>2</inf> interfaces fabricated by rapid thermal annealing in O<inf>2</inf> ambient. KTH Publication Database DiVA (KTH Royal Institute of Technology). 93. 164–166. 1 indexed citations
7.
Hou, S., Per‐Erik Hellström, Carl‐Mikael Zetterling, & Mikael Östling. (2017). Scaling of 4H-SiC p-i-n photodiodes for high temperature applications. 1–2. 2 indexed citations
8.
Mitrović, Ivona Z., S. Hall, David Hesp, et al.. (2015). Atomic-layer deposited thulium oxide as a passivation layer on germanium. Journal of Applied Physics. 117(21). 6 indexed citations
9.
Hellström, Per‐Erik, et al.. (2014). Fabrication and characterization of silicon nanowires using STL for biosensing applications. 109–112. 6 indexed citations
10.
Litta, E. Dentoni, Per‐Erik Hellström, Christoph Henkel, & Mikael Östling. (2013). Thulium Silicate Interfacial Layer for Scalable High-k/Metal Gate Stacks. IEEE Transactions on Electron Devices. 60(10). 3271–3276. 18 indexed citations
11.
Henkel, Christoph, Per‐Erik Hellström, Mikael Östling, et al.. (2012). Impact of oxidation and reduction annealing on the electrical properties of Ge/La2O3/ZrO2 gate stacks. Solid-State Electronics. 74(5). 7–12. 6 indexed citations
12.
Hellström, Per‐Erik, et al.. (2009). Fully Depleted UTB and Trigate N-Channel MOSFETs Featuring Low-Temperature PtSi Schottky-Barrier Contacts With Dopant Segregation. IEEE Electron Device Letters. 30(5). 541–543. 14 indexed citations
13.
Olsen, Sarah H., A.G. O’Neill, Per‐Erik Hellström, et al.. (2008). Strained Si/SiGe MOS technology: Improving gate dielectric integrity. Microelectronic Engineering. 86(3). 218–223. 13 indexed citations
14.
Östling, Mikael, B. Gunnar Malm, Martin von Haartman, et al.. (2007). Challenges for 10 nm MOSFET process integration. Journal of Telecommunications and Information Technology. 25–32. 2 indexed citations
15.
Driussi, F., David Esseni, L. Selmi, et al.. (2007). Experimental and Simulation Study of the Biaxial Strain and Temperature dependence of the Electron Mobility Enhancement in Si MOSFETs. Institutional Research Information System (University of Udine). 21–24. 2 indexed citations
16.
Östling, Mikael, B. Gunnar Malm, Martin von Haartman, et al.. (2006). Device Integration Issues Towards 10 nm MOSFETs. 48. 23–28. 1 indexed citations
17.
Lü, Jun, et al.. (2006). Ni 2 Si nanowires of extraordinarily low resistivity. Applied Physics Letters. 88(21). 13 indexed citations
18.
Olsen, Sarah H., Sanatan Chattopadhyay, S.J. Bull, et al.. (2006). Control of Self-Heating in Thin Virtual Substrate Strained Si MOSFETs. IEEE Transactions on Electron Devices. 53(9). 2296–2305. 15 indexed citations
19.
Haartman, Martin von, et al.. (2004). Investigation of low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics. Solid-State Electronics. 37(5). 150–3 contd. 1 indexed citations
20.
Isheden, Christian, et al.. (2004). Selective Si Etching Using HCl Vapor. Physica Scripta. T114. 107–109. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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