Per‐Erik Hellström

1.0k citations

104 papers · 811 indexed · h-index 16

Co-authors: Mikael Östling B. Gunnar Malm E. Dentoni Litta Henry H. Radamson Martin von Haartman Carl‐Mikael Zetterling S. Hou Christoph Henkel
Topics: Semiconductor materials and devices (71 papers)Advancements in Semiconductor Devices and Circuit Design (65 papers)Semiconductor materials and interfaces (25 papers)
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Biomedical Engineering
Journals: Applied Physics Letters Journal of Applied Physics Journal of The Electrochemical Society
Partner nations: Sweden United Kingdom Germany

In The Last Decade

Per‐Erik Hellström

100 papers receiving 757 citations

Peers

Countries citing papers authored by Per‐Erik Hellström

Since Specialization

Citations

This map shows the geographic impact of Per‐Erik Hellström's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Per‐Erik Hellström with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Per‐Erik Hellström more than expected).

Fields of papers citing papers by Per‐Erik Hellström

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Per‐Erik Hellström. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Per‐Erik Hellström. The network helps show where Per‐Erik Hellström may publish in the future.

Co-authorship network of co-authors of Per‐Erik Hellström

This figure shows the co-authorship network connecting the top 25 collaborators of Per‐Erik Hellström. A scholar is included among the top collaborators of Per‐Erik Hellström based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Per‐Erik Hellström. Per‐Erik Hellström is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Optical concentration in fully delineated mid-wave infrared T2SL detectors arrays 2023 ·Applied Physics Letters ·(unknown),M. Delmas,Linda Höglund,(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),Eric Costard,Per‐Erik Hellström	1
2	A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C 2020 ·IEEE Journal of the Electron Devices Society ·S. Hou,(unknown),Per‐Erik Hellström,B. Gunnar Malm,Carl‐Mikael Zetterling,Mikael Östling	15
3	Wafer-scale HfO₂ encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment 2019 ·Nanotechnology ·(unknown),Maxime Legallais,Per‐Erik Hellström,Mireille Mouis,Isabelle Pignot‐Paintrand,Valérie Stambouli,Céline Ternon,Mikael Östling	10
4	Germanium on Insulator Fabrication for Monolithic 3-D Integration 2018 ·IEEE Journal of the Electron Devices Society ·(unknown),(unknown),Ali Asadollahi,(unknown),(unknown),B. Gunnar Malm,Per‐Erik Hellström,Mikael Östling	8
5	Monolithic Wafer Scale Integration of Silicon Nanoribbon Sensors with CMOS for Lab-on-Chip Application 2018 ·Micromachines ·(unknown),Per‐Erik Hellström,Mikael Östling	3
6	The impact of atomic layer depositions on high quality Ge/GeO<inf>2</inf> interfaces fabricated by rapid thermal annealing in O<inf>2</inf> ambient 2017 ·KTH Publication Database DiVA (KTH Royal Institute of Technology) ·(unknown),Per‐Erik Hellström,Mikael Östling	1
7	Scaling of 4H-SiC p-i-n photodiodes for high temperature applications 2017 ·S. Hou,Per‐Erik Hellström,Carl‐Mikael Zetterling,Mikael Östling	2
8	Atomic-layer deposited thulium oxide as a passivation layer on germanium 2015 ·Journal of Applied Physics ·Ivona Z. Mitrović,S. Hall,(unknown),David Hesp,V.R. Dhanak,A. Santoni,Ayendra Weerakkody,Naser Sedghi,Paul R. Chalker,Christoph Henkel,E. Dentoni Litta,Per‐Erik Hellström,Mikael Östling,Hui Ling Tan,Sylvie Schamm‐Chardon	6
9	Fabrication and characterization of silicon nanowires using STL for biosensing applications 2014 ·(unknown),(unknown),Per‐Erik Hellström,Mikael Östling	6
10	Thulium Silicate Interfacial Layer for Scalable High-k/Metal Gate Stacks 2013 ·IEEE Transactions on Electron Devices ·E. Dentoni Litta,Per‐Erik Hellström,Christoph Henkel,Mikael Östling	18
11	Impact of oxidation and reduction annealing on the electrical properties of Ge/La2O3/ZrO2 gate stacks 2012 ·Solid-State Electronics ·Christoph Henkel,Per‐Erik Hellström,Mikael Östling,Michael Stöger‐Pollach,Ole Bethge,E. Bertagnolli	6
12	Fully Depleted UTB and Trigate N-Channel MOSFETs Featuring Low-Temperature PtSi Schottky-Barrier Contacts With Dopant Segregation 2009 ·IEEE Electron Device Letters ·(unknown),Per‐Erik Hellström,Jun Luo,Jun Lu,Shi‐Li Zhang,Mikael Östling	14
13	Strained Si/SiGe MOS technology: Improving gate dielectric integrity 2008 ·Microelectronic Engineering ·Sarah H. Olsen,(unknown),(unknown),(unknown),A.G. O’Neill,Per‐Erik Hellström,Mikael Östling,K. Lyutovich,E. Kasper,C. Claeys,E. H. C. Parker	13
14	Challenges for 10 nm MOSFET process integration 2007 ·Journal of Telecommunications and Information Technology ·Mikael Östling,B. Gunnar Malm,Martin von Haartman,(unknown),Zhen Zhang,Per‐Erik Hellström,Shi‐Li Zhang	2
15	Experimental and Simulation Study of the Biaxial Strain and Temperature dependence of the Electron Mobility Enhancement in Si MOSFETs 2007 ·Institutional Research Information System (University of Udine) ·F. Driussi,David Esseni,L. Selmi,Per‐Erik Hellström,Gunnar Malm,(unknown),Mikael Östling,T. J. Grasby,D. R. Leadley,Xavier Mescot	2
16	Device Integration Issues Towards 10 nm MOSFETs 2006 ·Mikael Östling,B. Gunnar Malm,Martin von Haartman,(unknown),Zhen Zhang,Per‐Erik Hellström,Shi‐Li Zhang	1
17	Ni 2 Si nanowires of extraordinarily low resistivity 2006 ·Applied Physics Letters ·(unknown),Jun Lü,Per‐Erik Hellström,Mikael Östling,Shi‐Li Zhang	13
18	Control of Self-Heating in Thin Virtual Substrate Strained Si MOSFETs 2006 ·IEEE Transactions on Electron Devices ·Sarah H. Olsen,(unknown),(unknown),(unknown),(unknown),(unknown),Sanatan Chattopadhyay,S.J. Bull,A.G. O’Neill,Per‐Erik Hellström,(unknown),Mikael Östling,K. Lyutovich,Michael Oehme,E. Kasper	15
19	Investigation of low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics 2004 ·Solid-State Electronics ·Martin von Haartman,Jörgen Westlinder,(unknown),Gunnar Malm,Per‐Erik Hellström,Jörgen Olsson,(unknown)	1
20	Selective Si Etching Using HCl Vapor 2004 ·Physica Scripta ·Christian Isheden,Per‐Erik Hellström,Henry H. Radamson,(unknown),Mikael Östling	11

About Per‐Erik Hellström

Per‐Erik Hellström is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Bioengineering, having authored 104 papers that have together received 811 indexed citations. Recurring topics across this work include Semiconductor materials and devices (71 papers), Advancements in Semiconductor Devices and Circuit Design (65 papers) and Semiconductor materials and interfaces (25 papers). The work is most often cited by research in Electrical and Electronic Engineering (725 citations), Atomic and Molecular Physics, and Optics (204 citations) and Biomedical Engineering (168 citations). Per‐Erik Hellström has collaborated with scholars based in Sweden, United Kingdom and Germany. Frequent co-authors include Mikael Östling, B. Gunnar Malm, E. Dentoni Litta, Henry H. Radamson, Martin von Haartman, Carl‐Mikael Zetterling, S. Hou, Christoph Henkel, Shi‐Li Zhang and Jun Lü. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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