Sadahiro Kato

1.2k total citations · 1 hit paper
25 papers, 1.0k citations indexed

About

Sadahiro Kato is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Sadahiro Kato has authored 25 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Condensed Matter Physics, 23 papers in Electrical and Electronic Engineering and 15 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Sadahiro Kato's work include GaN-based semiconductor devices and materials (25 papers), Ga2O3 and related materials (15 papers) and Semiconductor materials and devices (14 papers). Sadahiro Kato is often cited by papers focused on GaN-based semiconductor devices and materials (25 papers), Ga2O3 and related materials (15 papers) and Semiconductor materials and devices (14 papers). Sadahiro Kato collaborates with scholars based in Japan, United Kingdom and United States. Sadahiro Kato's co-authors include Seikoh Yoshida, Takehiko Nomura, Hiroshi Kambayashi, Nariaki Ikeda, Yuki Niiyama, Yoshihiro Sato, Yoshihiro Sato, Shinya Ootomo, Hiroshi Sasaki and T. P. Chow and has published in prestigious journals such as Proceedings of the IEEE, Japanese Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

Sadahiro Kato

24 papers receiving 948 citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

GaN Power Transistors on Si Substrates for Switching Applications

2010 447 citations Nariaki Ikeda, Yuki Niiyama et al. Proceedings of the IEEE profile →

Peers

Countries citing papers authored by Sadahiro Kato

Since Specialization

Citations

This map shows the geographic impact of Sadahiro Kato's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sadahiro Kato with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sadahiro Kato more than expected).

Fields of papers citing papers by Sadahiro Kato

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sadahiro Kato. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sadahiro Kato. The network helps show where Sadahiro Kato may publish in the future.

Co-authorship network of co-authors of Sadahiro Kato

This figure shows the co-authorship network connecting the top 25 collaborators of Sadahiro Kato. A scholar is included among the top collaborators of Sadahiro Kato based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sadahiro Kato. Sadahiro Kato is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	High Integrity SiO₂Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal–Oxide–Semiconductor Heterojunction Field-Effect Transistor on Si Substrate 2012 ·Japanese Journal of Applied Physics ·Hiroshi Kambayashi, Takehiko Nomura, Sadahiro Kato, H. Ueda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi	6
2	High Integrity SiO₂Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal–Oxide–Semiconductor Heterojunction Field-Effect Transistor on Si Substrate 2012 ·Japanese Journal of Applied Physics ·Hiroshi Kambayashi, Takehiko Nomura, Sadahiro Kato, H. Ueda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi	2
3	AlGaN/GaN HFETs using highly C-doped layers on Si substrate 2011 ·IEICE technical report. Speech ·(unknown), (unknown), Nariaki Ikeda, Sadahiro Kato	1
4	V_b/R_on improvement and current collapse suppression for high power AlGaN/GaN HFETs on Si substrates 2011 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Nariaki Ikeda, (unknown), (unknown), Sadahiro Kato	1
5	High Power GaN Field Effect Transistors on Si Substrates 2011 ·Journal of the Vacuum Society of Japan ·Nariaki Ikeda, (unknown), (unknown), Jiang Li, Hiroshi Kambayashi, Yoshihiro Sato, Takehiko Nomura, Sadahiro Kato	1
6	Over 1.7 kV normally-off GaN hybrid MOS-HFETs with a lower on-resistance on a Si substrate 2011 ·Nariaki Ikeda, Ryosuke Tamura, (unknown), Hiroshi Kambayashi, Yoshihiro Sato, Takehiko Nomura, Sadahiro Kato	29
7	(Invited) High Power Normally-Off GaN MOSFET 2011 ·ECS Transactions ·Hiroshi Kambayashi, Yoshihiro Sato, (unknown), Nariaki Ikeda, Takehiko Nomura, Sadahiro Kato, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi	3
8	GaN Power Transistors on Si Substrates for Switching Applications breakdown → 2010 ·Proceedings of the IEEE ·Nariaki Ikeda, Yuki Niiyama, Hiroshi Kambayashi, Yoshihiro Sato, Takehiko Nomura, Sadahiro Kato, Seikoh Yoshida	447
9	Over 1000V/30mA operation GaN-on-Si MOSFETs fabricated on Si substrates 2010 ·Solid-State Electronics ·Yuki Niiyama, Zhongda Li, T. Paul Chow, Jiang Li, Takehiko Nomura, Sadahiro Kato	6
10	Normally off operation GaN-based MOSFETs for power electronics applications 2010 ·Semiconductor Science and Technology ·Yuki Niiyama, Shinya Ootomo, Jiang Li, Takehiko Nomura, Sadahiro Kato, T. Paul Chow	16
11	Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage 2010 ·Solid-State Electronics ·Hiroshi Kambayashi, Yoshihiro Sato, Shinya Ootomo, (unknown), Takehiko Nomura, Sadahiro Kato, T. P. Chow	130
12	Normally-Off Operation GaN Based MOSFETs for Power Electronics 2009 ·Yuki Niiyama, Shinya Ootomo, Hiroshi Kambayashi, Nariaki Ikeda, Takehiko Nomura, Sadahiro Kato	15
13	High power AlGaN/GaN HFETs on 4 inch Si substrates 2009 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Nariaki Ikeda, (unknown), Jiang Li, Yoshihiro Sato, (unknown), Sadahiro Kato	4
14	GaN MOSFETs with Large Current and Normally-off Operation 2008 ·ECS Transactions ·Yuki Niiyama, Hiroshi Kambayashi, Shinya Ootomo, Nariaki Ikeda, Takehiko Nomura, Sadahiro Kato	2
15	High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse 2008 ·Nariaki Ikeda, (unknown), Li Jiang, Yoshihiro Sato, Sadahiro Kato, Seikoh Yoshida	94
16	Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation 2007 ·IEEE Electron Device Letters ·Hiroshi Kambayashi, Yuki Niiyama, Shinya Ootomo, Takehiko Nomura, (unknown), Yoshihiro Sato, Sadahiro Kato, Seikoh Yoshida	49
17	Buffer breakdown voltage of AlGaN/GaN HFET on a 4 inch Si(111) substrate grown by MOCVD 2007 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown), Sadahiro Kato, Yoshihiro Sato, Hiroshi Sasaki, Seikoh Yoshida	1
18	C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE 2006 ·Journal of Crystal Growth ·Sadahiro Kato, Yoshihiro Sato, Hiroshi Sasaki, (unknown), Seikoh Yoshida	115
19	Fabrication of AlGaN/GaN HFET with a High Breakdown Voltage on 4-inch Si (111) Substrate by MOVPE 2006 ·MRS Proceedings ·Yuki Niiyama, Sadahiro Kato, Yoshihiro Sato, (unknown), Jiang Li, Hironari Takehara, Hiroshi Kambayashi, Nariaki Ikeda, Seikoh Yoshida	6
20	Investigation of Surface Pits Originating in Dislocations in AlGaN/GaN Epitaxial Layer Grown on Si Substrate with Buffer Layer 2006 ·Japanese Journal of Applied Physics ·Hiroshi Sasaki, Sadahiro Kato, (unknown), Yoshihiro Sato, (unknown), Seikoh Yoshida	4

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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