Hiroshi Kambayashi

1.2k citations

34 papers · 1.0k indexed · 1 hit paper · h-index 15

Co-authors: Takehiko Nomura Sadahiro Kato Seikoh Yoshida Yuki Niiyama Nariaki Ikeda Yoshihiro Sato Shinya Ootomo T. P. Chow
Topics: GaN-based semiconductor devices and materials (29 papers)Silicon Carbide Semiconductor Technologies (18 papers)Semiconductor materials and devices (17 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Proceedings of the IEEE IEEE Transactions on Electron Devices Japanese Journal of Applied Physics
Partner nations: Japan United Kingdom United States

In The Last Decade

Hiroshi Kambayashi

33 papers receiving 972 citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

GaN Power Transistors on Si Substrates for Switching Applications

2010 447 citations Nariaki Ikeda, Yuki Niiyama et al. Proceedings of the IEEE profile →

Peers

Countries citing papers authored by Hiroshi Kambayashi

Since Specialization

Citations

This map shows the geographic impact of Hiroshi Kambayashi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hiroshi Kambayashi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hiroshi Kambayashi more than expected).

Fields of papers citing papers by Hiroshi Kambayashi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hiroshi Kambayashi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hiroshi Kambayashi. The network helps show where Hiroshi Kambayashi may publish in the future.

Co-authorship network of co-authors of Hiroshi Kambayashi

This figure shows the co-authorship network connecting the top 25 collaborators of Hiroshi Kambayashi. A scholar is included among the top collaborators of Hiroshi Kambayashi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hiroshi Kambayashi. Hiroshi Kambayashi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	High Quality SiO 2013 ·Japanese Journal of Applied Physics ·Hiroshi Kambayashi,(unknown),Hirokazu Ueda,(unknown),(unknown),(unknown),Akinobu Teramoto,Shigetoshi Sugawa,Tadahiro Ohmi	10
2	High Quality SiO₂/Al₂O₃ Gate Stack for GaN Metal–Oxide–Semiconductor Field-Effect Transistor 2013 ·Japanese Journal of Applied Physics ·Hiroshi Kambayashi,Takehiko Nomura,H. Ueda,(unknown),(unknown),(unknown),Akinobu Teramoto,Shigetoshi Sugawa,Tadahiro Ohmi	38
3	High Integrity SiO₂Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal–Oxide–Semiconductor Heterojunction Field-Effect Transistor on Si Substrate 2012 ·Japanese Journal of Applied Physics ·Hiroshi Kambayashi,Takehiko Nomura,Sadahiro Kato,H. Ueda,Akinobu Teramoto,Shigetoshi Sugawa,Tadahiro Ohmi	6
4	High Integrity SiO₂Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal–Oxide–Semiconductor Heterojunction Field-Effect Transistor on Si Substrate 2012 ·Japanese Journal of Applied Physics ·Hiroshi Kambayashi,Takehiko Nomura,Sadahiro Kato,H. Ueda,Akinobu Teramoto,Shigetoshi Sugawa,Tadahiro Ohmi	2
5	High Power GaN Field Effect Transistors on Si Substrates 2011 ·Journal of the Vacuum Society of Japan ·Nariaki Ikeda,(unknown),(unknown),Jiang Li,Hiroshi Kambayashi,Yoshihiro Sato,Takehiko Nomura,Sadahiro Kato	1
6	GaN Power Transistors on Si Substrates for Switching Applicationsbreakdown → 2010 ·Proceedings of the IEEE ·Nariaki Ikeda,Yuki Niiyama,Hiroshi Kambayashi,Yoshihiro Sato,Takehiko Nomura,Sadahiro Kato,Seikoh Yoshida	447
7	Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage 2010 ·Solid-State Electronics ·Hiroshi Kambayashi,Yoshihiro Sato,Shinya Ootomo,(unknown),Takehiko Nomura,Sadahiro Kato,T. P. Chow	130
8	Normally-Off Operation GaN Based MOSFETs for Power Electronics 2009 ·Yuki Niiyama,Shinya Ootomo,Hiroshi Kambayashi,Nariaki Ikeda,Takehiko Nomura,Sadahiro Kato	15
9	GaN MOSFETs with Large Current and Normally-off Operation 2008 ·ECS Transactions ·Yuki Niiyama,Hiroshi Kambayashi,Shinya Ootomo,Nariaki Ikeda,Takehiko Nomura,Sadahiro Kato	2
10	Over 2 A Operation at 250 °C of GaN Metal–Oxide–Semiconductor Field Effect Transistors on Sapphire Substrates 2008 ·Japanese Journal of Applied Physics ·Yuki Niiyama,Hiroshi Kambayashi,Shinya Ootomo,Takehiko Nomura,Seikoh Yoshida,(unknown)	21
11	Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors 2008 ·Japanese Journal of Applied Physics ·Yuki Niiyama,Shinya Ootomo,Jiang Li,Hiroshi Kambayashi,Takehiko Nomura,Seikoh Yoshida,Kentarou Sawano,Yasuhiro Shiraki	18
12	Over 55 A, 800 V high power AlGaN/GaN HFETs for power switching application 2007 ·physica status solidi (a) ·Nariaki Ikeda,Kazúo Kato,Kazuo Kondoh,Hiroshi Kambayashi,Jiang Li,Seikoh Yoshida	19
13	Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation 2007 ·IEEE Electron Device Letters ·Hiroshi Kambayashi,Yuki Niiyama,Shinya Ootomo,Takehiko Nomura,(unknown),Yoshihiro Sato,Sadahiro Kato,Seikoh Yoshida	49
14	High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates 2007 ·Solid-State Electronics ·Takehiko Nomura,Hiroshi Kambayashi,Yuki Niiyama,(unknown),Seikoh Yoshida	37
15	High‐quality SiO₂/GaN interface for enhanced operation field‐effect transistor 2007 ·physica status solidi (a) ·Yuki Niiyama,(unknown),Shinya Ootomo,Hiroshi Kambayashi,Takehiko Nomura,Seikoh Yoshida	28
16	High-Temperature Operation of AlGaN/GaN HFET With a Low on-State Resistance, High Breakdown Voltage, and Fast Switching 2006 ·IEEE Transactions on Electron Devices ·Takehiko Nomura,Hiroshi Kambayashi,(unknown),(unknown),Nariaki Ikeda,(unknown),Seikoh Yoshida	23
17	High Temperature Operation AlGaN/GaN HFET with a low on-state resistance, a high breakdown voltage and a fast switching capacity 2006 ·Takahiro Nomura,Hiroshi Kambayashi,Muneyuki Masuda,(unknown),Nariaki Ikeda,Jaehyun Lee,S. Yoshida	11
18	Effects of the high-refractive index SiNx passivation on AlGaN/GaN HFETs with a very low gate-leakage current 2005 ·MRS Proceedings ·Hiroshi Kambayashi,Takahiro Wada,Nariaki Ikeda,Seikoh Yoshida	1
19	High Power AlGaN/GaN Schottky Barrier Diode with 1000 V Operation 2005 ·MRS Proceedings ·Seikoh Yoshida,Nariaki Ikeda,Jiang Li,Takahiro Wada,Hiroshi Kambayashi,Hironari Takehara	2
20	Epitaxial Growth of Ca_xCd_1-xF₂ Mixed Crystal Films on Si Substrates 2000 ·Japanese Journal of Applied Physics ·(unknown),Hiroshi Kambayashi,Kazuo Tsutsui	1

About Hiroshi Kambayashi

Hiroshi Kambayashi is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 34 papers that have together received 1.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (29 papers), Silicon Carbide Semiconductor Technologies (18 papers) and Semiconductor materials and devices (17 papers). The work is most often cited by research in Condensed Matter Physics (920 citations), Electronic, Optical and Magnetic Materials (500 citations) and Electrical and Electronic Engineering (797 citations). Hiroshi Kambayashi has collaborated with scholars based in Japan, United Kingdom and United States. Frequent co-authors include Takehiko Nomura, Sadahiro Kato, Seikoh Yoshida, Yuki Niiyama, Nariaki Ikeda, Yoshihiro Sato, Shinya Ootomo, Yoshihiro Sato, T. P. Chow and Jiang Li. Their work appears in journals such as Proceedings of the IEEE, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

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