Eugene A. Imhoff

871 total citations
42 papers, 746 citations indexed

About

Eugene A. Imhoff is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Eugene A. Imhoff has authored 42 papers receiving a total of 746 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 12 papers in Electronic, Optical and Magnetic Materials and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Eugene A. Imhoff's work include Silicon Carbide Semiconductor Technologies (29 papers), Semiconductor materials and devices (13 papers) and Copper Interconnects and Reliability (8 papers). Eugene A. Imhoff is often cited by papers focused on Silicon Carbide Semiconductor Technologies (29 papers), Semiconductor materials and devices (13 papers) and Copper Interconnects and Reliability (8 papers). Eugene A. Imhoff collaborates with scholars based in United States, China and Egypt. Eugene A. Imhoff's co-authors include Karl D. Hobart, D. B. Fitchen, Marko J. Tadjer, Robert E. Stahlbush, Fritz J. Kub, Charles R. Eddy, H. Kuzmany, Rachael L. Myers‐Ward, Travis J. Anderson and D. Kurt Gaskill and has published in prestigious journals such as The Journal of Chemical Physics, Nano Letters and Physical review. B, Condensed matter.

In The Last Decade

Eugene A. Imhoff

41 papers receiving 716 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Eugene A. Imhoff United States 16 517 206 174 130 122 42 746
Chuan‐Zhen Zhao China 18 527 1.0× 571 2.8× 307 1.8× 136 1.0× 98 0.8× 95 837
Long Jin China 7 726 1.4× 673 3.3× 88 0.5× 97 0.7× 213 1.7× 10 917
P. Kuivalainen Finland 15 605 1.2× 240 1.2× 223 1.3× 72 0.6× 114 0.9× 90 907
Yuyin Xi United States 18 611 1.2× 232 1.1× 84 0.5× 246 1.9× 178 1.5× 32 851
Emily G. Bittle United States 12 839 1.6× 250 1.2× 116 0.7× 68 0.5× 131 1.1× 24 1.1k
A. C. Dürr Germany 12 754 1.5× 290 1.4× 272 1.6× 44 0.3× 50 0.4× 20 907
H. Tomozawa Japan 13 382 0.7× 125 0.6× 139 0.8× 117 0.9× 124 1.0× 24 561
Kiroubanand Sankaran Belgium 16 609 1.2× 620 3.0× 424 2.4× 59 0.5× 248 2.0× 38 1.1k
Julie Teetsov United States 8 558 1.1× 263 1.3× 114 0.7× 267 2.1× 107 0.9× 10 743
Eiji Shikoh Japan 17 473 0.9× 365 1.8× 672 3.9× 138 1.1× 186 1.5× 55 976

Countries citing papers authored by Eugene A. Imhoff

Since Specialization
Citations

This map shows the geographic impact of Eugene A. Imhoff's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Eugene A. Imhoff with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Eugene A. Imhoff more than expected).

Fields of papers citing papers by Eugene A. Imhoff

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Eugene A. Imhoff. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Eugene A. Imhoff. The network helps show where Eugene A. Imhoff may publish in the future.

Co-authorship network of co-authors of Eugene A. Imhoff

This figure shows the co-authorship network connecting the top 25 collaborators of Eugene A. Imhoff. A scholar is included among the top collaborators of Eugene A. Imhoff based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Eugene A. Imhoff. Eugene A. Imhoff is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mahadik, Nadeemullah A., et al.. (2016). Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing. Materials science forum. 858. 233–236. 10 indexed citations
2.
Anderson, Travis J., Andrew D. Koehler, Jaime A. Freitas, et al.. (2016). Hyperspectral Electroluminescence Characterization of OFF-State Device Characteristics in Proton Irradiated High Voltage AlGaN/GaN HEMTs. ECS Journal of Solid State Science and Technology. 5(12). Q289–Q293. 10 indexed citations
3.
Nomoto, Kazuki, Zhenqi Hu, Bo Song, et al.. (2015). GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2. 9.7.1–9.7.4. 52 indexed citations
4.
Mahadik, Nadeemullah A., Robert E. Stahlbush, Anindya Nath, et al.. (2014). Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers. Materials science forum. 778-780. 324–327. 3 indexed citations
5.
Mahadik, Nadeemullah A., Marko J. Tadjer, Robert E. Stahlbush, Eugene A. Imhoff, & Boris N. Feigelson. (2014). Multi-Cycle High Temperature Rapid Thermal Annealing for Dislocation Elimination in 4H-SiC Epitaxy. ECS Transactions. 64(7). 35–39. 2 indexed citations
6.
Nyakiti, Luke O., Rachael L. Myers‐Ward, Virginia D. Wheeler, et al.. (2012). Bilayer Graphene Grown on 4H-SiC (0001) Step-Free Mesas. Nano Letters. 12(4). 1749–1756. 49 indexed citations
7.
Hobart, Karl D., Eugene A. Imhoff, Fritz J. Kub, et al.. (2012). Performance of Hybrid 4.5 kV SiC JBS Freewheeling Diode and Si IGBT. Materials science forum. 717-720. 941–944. 2 indexed citations
8.
Stahlbush, Robert E., Nadeemullah A. Mahadik, Eugene A. Imhoff, et al.. (2011). Expansion of Shockley Stacking faults in high doped 4H-SiC epilayers. 427. 1–2. 2 indexed citations
9.
Hefner, Allen R., Karl D. Hobart, Sei‐Hyung Ryu, et al.. (2011). Comparison of 4.5 kV SiC JBS and Si PiN diodes for 4.5 kV Si IGBT anti-parallel diode applications. 1057–1063. 24 indexed citations
10.
Myers‐Ward, Rachael L., Luke O. Nyakiti, Jennifer K. Hite, et al.. (2011). Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas. Materials science forum. 679-680. 119–122. 1 indexed citations
11.
Tadjer, Marko J., Robert E. Stahlbush, Karl D. Hobart, et al.. (2010). Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current. Journal of Electronic Materials. 39(5). 517–525. 5 indexed citations
12.
Imhoff, Eugene A., Fritz J. Kub, & Karl D. Hobart. (2009). Grayscale Junction Termination for High-Voltage SiC Devices. Materials science forum. 615-617. 691–694. 7 indexed citations
13.
Hull, Brett, Joseph J. Sumakeris, Michael O’Loughlin, et al.. (2008). Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers. IEEE Transactions on Electron Devices. 55(8). 1864–1870. 71 indexed citations
14.
Imhoff, Eugene A. & Karl D. Hobart. (2008). High-Current 10 kV SiC JBS Rectifier Performance. Materials science forum. 600-603. 943–946. 4 indexed citations
15.
Imhoff, Eugene A., et al.. (2007). Gray-scale lithography of photosensitive polyimide and its graphitization. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6519. 65191I–65191I. 3 indexed citations
16.
Caldwell, Joshua D., Robert E. Stahlbush, O. J. Glembocki, et al.. (2007). Influence of Shockley stacking fault propagation and contraction on electrical behavior of 4H-SiC pin diodes and DMOSFETs. 2 indexed citations
17.
Imhoff, Eugene A., M. I. Bell, & Richard A. Forman. (1985). Hot photoluminescence in beryllium-doped gallium arsenide. Solid State Communications. 54(10). 845–848. 10 indexed citations
18.
Imhoff, Eugene A., et al.. (1984). Resonance Raman spectra of c i s (CH)x and (CD)x. The Journal of Chemical Physics. 81(1). 168–184. 55 indexed citations
19.
Imhoff, Eugene A.. (1983). Raman Scattering and Luminescence in Polyacetylene during the Cis-Trans Isomerization.. PhDT. 1 indexed citations
20.
Kuzmany, H., et al.. (1982). Frank-Condon approach for optical absorption and resonance Raman scattering intrans-polyacetylene. Physical review. B, Condensed matter. 26(12). 7109–7112. 64 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Chuan‐Zhen Zhao Breakdown of academic impact, for papers by Long Jin Breakdown of academic impact, for papers by P. Kuivalainen Breakdown of academic impact, for papers by Yuyin Xi Breakdown of academic impact, for papers by Emily G. Bittle Breakdown of academic impact, for papers by A. C. Dürr Breakdown of academic impact, for papers by H. Tomozawa Breakdown of academic impact, for papers by Kiroubanand Sankaran Breakdown of academic impact, for papers by Julie Teetsov Breakdown of academic impact, for papers by Eiji Shikoh
Rankless by CCL
2026