Roberta Nipoti

2.5k total citations
190 papers, 2.0k citations indexed

About

Roberta Nipoti is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, Roberta Nipoti has authored 190 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 176 papers in Electrical and Electronic Engineering, 68 papers in Atomic and Molecular Physics, and Optics and 35 papers in Computational Mechanics. Recurrent topics in Roberta Nipoti's work include Silicon Carbide Semiconductor Technologies (138 papers), Semiconductor materials and devices (86 papers) and Semiconductor materials and interfaces (67 papers). Roberta Nipoti is often cited by papers focused on Silicon Carbide Semiconductor Technologies (138 papers), Semiconductor materials and devices (86 papers) and Semiconductor materials and interfaces (67 papers). Roberta Nipoti collaborates with scholars based in Italy, United States and Norway. Roberta Nipoti's co-authors include F. Moscatelli, Antonella Poggi, M. Bianconi, G. G. Bentini, A. Parisini, G. Lulli, Anders Hallén, Hussein M. Ayedh, A. Carnera and E. Albertazzi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Langmuir.

In The Last Decade

Roberta Nipoti

184 papers receiving 1.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Roberta Nipoti Italy 23 1.8k 668 335 288 171 190 2.0k
H. Tanoue Japan 22 1.1k 0.6× 640 1.0× 241 0.7× 551 1.9× 109 0.6× 128 1.6k
A. V. Drigo Italy 24 1.2k 0.7× 986 1.5× 477 1.4× 684 2.4× 87 0.5× 139 2.0k
Margareta K. Linnarsson Sweden 23 1.8k 1.0× 562 0.8× 194 0.6× 896 3.1× 350 2.0× 133 2.2k
S. R. Wilson United States 19 965 0.6× 357 0.5× 382 1.1× 409 1.4× 99 0.6× 92 1.4k
K.J. Reeson United Kingdom 21 1.7k 1.0× 1.2k 1.7× 376 1.1× 604 2.1× 91 0.5× 102 2.0k
M. Servidori Italy 24 1.3k 0.7× 654 1.0× 399 1.2× 495 1.7× 55 0.3× 112 1.6k
N. Cherkashin France 27 1.7k 0.9× 851 1.3× 337 1.0× 938 3.3× 114 0.7× 146 2.2k
Seijiro Furukawa Japan 20 952 0.5× 618 0.9× 254 0.8× 398 1.4× 127 0.7× 99 1.3k
B.J. Sealy United Kingdom 17 836 0.5× 424 0.6× 236 0.7× 509 1.8× 48 0.3× 111 1.1k
H. Cerva Germany 23 994 0.6× 590 0.9× 125 0.4× 613 2.1× 241 1.4× 91 1.5k

Countries citing papers authored by Roberta Nipoti

Since Specialization
Citations

This map shows the geographic impact of Roberta Nipoti's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Roberta Nipoti with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Roberta Nipoti more than expected).

Fields of papers citing papers by Roberta Nipoti

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Roberta Nipoti. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Roberta Nipoti. The network helps show where Roberta Nipoti may publish in the future.

Co-authorship network of co-authors of Roberta Nipoti

This figure shows the co-authorship network connecting the top 25 collaborators of Roberta Nipoti. A scholar is included among the top collaborators of Roberta Nipoti based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Roberta Nipoti. Roberta Nipoti is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Alfieri, Giovanni, Sami Bolat, & Roberta Nipoti. (2024). The effects of different anode manufacturing methods on deep levels in 4H-SiC p+n diodes. Journal of Applied Physics. 135(23). 2 indexed citations
2.
Kovtun, Alessandro, C. Summonte, Andrea Candini, et al.. (2023). Native Silicon Oxide Properties Determined by Doping. Langmuir. 39(35). 12430–12451. 6 indexed citations
3.
Torregrosa, Frank, et al.. (2022). Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si. MRS Advances. 7(36). 1347–1352. 3 indexed citations
4.
Parisini, A., A. Parisini, & Roberta Nipoti. (2016). Size effect on high temperature variable range hopping in Al+implanted 4H-SiC. Journal of Physics Condensed Matter. 29(3). 35703–35703. 15 indexed citations
5.
Nipoti, Roberta, A. Parisini, Giovanni Alfieri, et al.. (2016). 1950°C Annealing of Al<sup>+</sup> Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time. Materials science forum. 858. 523–526. 2 indexed citations
6.
Nipoti, Roberta, et al.. (2014). P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation. MRS Proceedings. 1693. 2 indexed citations
7.
Mahadik, Nadeemullah A., Robert E. Stahlbush, Anindya Nath, et al.. (2014). Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers. Materials science forum. 778-780. 324–327. 3 indexed citations
8.
Nipoti, Roberta, et al.. (2012). Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC. Journal of materials research/Pratt's guide to venture capital sources. 28(1). 17–22. 36 indexed citations
9.
Lulli, G. & Roberta Nipoti. (2011). 2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al<sup>+</sup> Ions. Materials science forum. 679-680. 421–424. 4 indexed citations
10.
Moscatelli, F., A. Scorzoni, Antonella Poggi, et al.. (2006). Radiation Hardness of Minimum Ionizing Particle Detectors Based on SiC p/sup +/n Junctions. 1. 490–494. 1 indexed citations
11.
Nipoti, Roberta, et al.. (2005). Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.
12.
Moscatelli, F., A. Scorzoni, Antonella Poggi, et al.. (2005). Measurements of Charge Collection Efficiency of p<sup>+</sup>/n Junction SiC Detectors. Materials science forum. 483-485. 1021–1024. 8 indexed citations
13.
Poggi, Antonella, Roberta Nipoti, S. Solmi, Mario Barozzi, & L. Vanzetti. (2004). Low temperature oxidation of SiC preamorphized by ion implantation. Journal of Applied Physics. 95(11). 6119–6123. 13 indexed citations
14.
Poggi, Antonella, Roberta Nipoti, F. Moscatelli, G.C. Cardinali, & Mariaconcetta Canino. (2004). SiC Donor Doping by 300°C P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature. Materials science forum. 457-460. 945–950. 5 indexed citations
15.
Moscatelli, F., A. Scorzoni, Antonella Poggi, G.C. Cardinali, & Roberta Nipoti. (2003). Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data. Materials science forum. 433-436. 673–676. 7 indexed citations
16.
Nava, F., P. Vanni, G. Verzellesi, et al.. (2001). Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky Diodes. Materials science forum. 353-356. 757–762. 18 indexed citations
17.
Barklie, R.C., G. Lulli, Roberta Nipoti, et al.. (1995). EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 96(1-2). 215–218. 17 indexed citations
18.
Bianconi, M., et al.. (1994). RBS-channeling spectra: simulation of as-implanted Si samples through an empirical formula for 〈100〉 axial dechanneling of He in silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 84(4). 507–511. 11 indexed citations
19.
Bentini, G. G., M. Bianconi, & Roberta Nipoti. (1993). Energy loss and equilibrium charge distribution of nitrogen ions transmitted through thin silicon crystals. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 80-81. 33–36. 7 indexed citations
20.
Merli, P. G., et al.. (1982). Self-annealed ion implanted solar cells. Applied Physics Letters. 41(10). 967–968. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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