A. V. Lunev

2.4k total citations
55 papers, 2.0k citations indexed

About

A. V. Lunev is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A. V. Lunev has authored 55 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Condensed Matter Physics, 27 papers in Electrical and Electronic Engineering and 20 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A. V. Lunev's work include GaN-based semiconductor devices and materials (28 papers), Semiconductor Quantum Structures and Devices (19 papers) and Semiconductor Lasers and Optical Devices (18 papers). A. V. Lunev is often cited by papers focused on GaN-based semiconductor devices and materials (28 papers), Semiconductor Quantum Structures and Devices (19 papers) and Semiconductor Lasers and Optical Devices (18 papers). A. V. Lunev collaborates with scholars based in United States, Russia and Germany. A. V. Lunev's co-authors include R. Gaška, M. S. Shur, X. Hu, Wenhong Sun, Jinwei Yang, M. Shatalov, Michael Wraback, Yu. Bilenko, Alex Dobrinsky and Gregory A. Garrett and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

A. V. Lunev

53 papers receiving 1.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. V. Lunev United States 20 1.3k 873 796 792 737 55 2.0k
T. V. Shubina Russia 23 1.0k 0.8× 964 1.1× 1.1k 1.3× 714 0.9× 1.2k 1.6× 200 2.2k
Shuai Wu United States 22 1.3k 1.0× 557 0.6× 371 0.5× 769 1.0× 538 0.7× 55 1.6k
W. Rieger Germany 13 2.7k 2.1× 1.3k 1.5× 913 1.1× 1.4k 1.7× 1.1k 1.5× 20 3.0k
E. Iliopoulos Greece 27 1.5k 1.2× 622 0.7× 530 0.7× 823 1.0× 819 1.1× 86 1.9k
Yoshihiko Toyoda Japan 9 1.5k 1.2× 682 0.8× 551 0.7× 785 1.0× 918 1.2× 16 1.9k
H. J. Łożykowski United States 21 807 0.6× 741 0.8× 393 0.5× 515 0.7× 1.0k 1.4× 51 1.5k
A. А. Ситникова Russia 18 403 0.3× 706 0.8× 611 0.8× 266 0.3× 637 0.9× 136 1.3k
Jai Verma United States 20 1.1k 0.8× 640 0.7× 313 0.4× 699 0.9× 484 0.7× 54 1.4k
Gordon Callsen Germany 25 742 0.6× 648 0.7× 529 0.7× 517 0.7× 812 1.1× 60 1.5k
H.‐J. Lugauer Germany 20 678 0.5× 1.0k 1.2× 924 1.2× 298 0.4× 727 1.0× 77 1.6k

Countries citing papers authored by A. V. Lunev

Since Specialization
Citations

This map shows the geographic impact of A. V. Lunev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. V. Lunev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. V. Lunev more than expected).

Fields of papers citing papers by A. V. Lunev

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. V. Lunev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. V. Lunev. The network helps show where A. V. Lunev may publish in the future.

Co-authorship network of co-authors of A. V. Lunev

This figure shows the co-authorship network connecting the top 25 collaborators of A. V. Lunev. A scholar is included among the top collaborators of A. V. Lunev based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. V. Lunev. A. V. Lunev is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Shatalov, Max, Wenhong Sun, Rakesh Jain, et al.. (2014). High power AlGaN ultraviolet light emitters. Semiconductor Science and Technology. 29(8). 84007–84007. 155 indexed citations
2.
Shatalov, Max, Wenhong Sun, A. V. Lunev, et al.. (2012). AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%. Applied Physics Express. 5(8). 82101–82101. 413 indexed citations
3.
Garrett, Gregory A., Anand V. Sampath, H. Shen, et al.. (2010). Evaluation of AlGaN‐based deep ultraviolet emitter active regions by temperature dependent time‐resolved photoluminescence. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(10). 2390–2393. 16 indexed citations
4.
Sun, Wenhong, Max Shatalov, X. Hu, et al.. (2009). Milliwatt power 245 nm deep ultraviolet light-emitting diodes. 46. 109–110. 2 indexed citations
5.
Jain, Rahul, Wenhong Sun, Jinwei Yang, et al.. (2008). Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes. Applied Physics Letters. 93(5). 86 indexed citations
6.
Deng, Jianyu, A. V. Lunev, X. Hu, et al.. (2007). 247 nm Ultra-Violet Light Emitting Diodes. Japanese Journal of Applied Physics. 46(4L). L263–L263. 19 indexed citations
7.
Sawyer, Shayla, S. L. Rumyantsev, Nezih Pala, et al.. (2006). Optical and Current Noise of GaN Based Light Emitting Diodes. 89–90. 1 indexed citations
8.
Čiplys, D., M. S. Shur, R. Rimeika, et al.. (2006). Deep‐UV LED controlled AlGaN‐based SAW oscillator. physica status solidi (a). 203(7). 1834–1838. 25 indexed citations
9.
Sawyer, Shayla, S. L. Rumyantsev, M. S. Shur, et al.. (2006). Current and optical noise of GaN∕AlGaN light emitting diodes. Journal of Applied Physics. 100(3). 41 indexed citations
10.
Lunev, A. V., X. Hu, Jianyu Deng, et al.. (2005). 10Milliwatt Pulse Operation of 265nm AlGaN Light Emitting Diodes. Japanese Journal of Applied Physics. 44(1). 1 indexed citations
11.
Rumyantsev, S. L., Shayla Sawyer, M. S. Shur, et al.. (2005). Low-frequency noise of GaN-based ultraviolet light-emitting diodes. Journal of Applied Physics. 97(12). 18 indexed citations
12.
Zhang, Jianping, X. Hu, A. V. Lunev, et al.. (2005). AlGaN Deep-Ultraviolet Light-Emitting Diodes. Japanese Journal of Applied Physics. 44(10R). 7250–7250. 93 indexed citations
13.
Zhang, Jianping, X. Hu, Yu. Bilenko, et al.. (2004). AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA. Applied Physics Letters. 85(23). 5532–5534. 91 indexed citations
14.
Shatalov, M., A. Chitnis, V. Adivarahan, et al.. (2001). Band-edge luminescence in quaternary AlInGaN light-emitting diodes. Applied Physics Letters. 78(6). 817–819. 41 indexed citations
15.
Chitnis, A., Ajay Kumar, M. Shatalov, et al.. (2000). High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells. Applied Physics Letters. 77(23). 3800–3802. 65 indexed citations
16.
Bedarev, D. A., B. V. Volovik, N. N. Ledentsov, et al.. (1999). Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix. Semiconductors. 33(1). 80–84. 9 indexed citations
17.
Karmanenko, S. F., et al.. (1998). Patterning of tunable planar ferroelectric capacitors based on the YBCO/BSTO film structure. Superconductor Science and Technology. 11(3). 284–287. 7 indexed citations
18.
Alfërov, Zh. I., N. Yu. Gordeev, P. S. Kop’ev, et al.. (1996). A low-threshold injection heterojunction laser based on quantum dots, produced by gas-phase epitaxy from organometallic compounds. 30(2). 197–200. 5 indexed citations
19.
Alfërov, Zh. I., Н. А. Берт, A. Yu. Egorov, et al.. (1996). An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix. Semiconductors. 30. 194. 21 indexed citations
20.
Круглов, М. В., et al.. (1986). Determination of the photoemission generation depth with use of experiments on the dynamic scattering of X‐Rays. physica status solidi (b). 133(1). 47–55. 1 indexed citations

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