B. V. Volovik

2.8k total citations
74 papers, 1.9k citations indexed

About

B. V. Volovik is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, B. V. Volovik has authored 74 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 74 papers in Atomic and Molecular Physics, and Optics, 62 papers in Electrical and Electronic Engineering and 20 papers in Materials Chemistry. Recurrent topics in B. V. Volovik's work include Semiconductor Quantum Structures and Devices (72 papers), Semiconductor Lasers and Optical Devices (42 papers) and Advanced Semiconductor Detectors and Materials (22 papers). B. V. Volovik is often cited by papers focused on Semiconductor Quantum Structures and Devices (72 papers), Semiconductor Lasers and Optical Devices (42 papers) and Advanced Semiconductor Detectors and Materials (22 papers). B. V. Volovik collaborates with scholars based in Russia, Germany and United States. B. V. Volovik's co-authors include V. M. Ustinov, D. Bimberg, Zh. I. Alfërov, A. R. Kovsh, N. N. Ledentsov, M. V. Maximov, A. F. Tsatsul’nikov, A. E. Zhukov, Yu. M. Shernyakov and Yu. G. Musikhin and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Applied Surface Science.

In The Last Decade

B. V. Volovik

73 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. V. Volovik Russia 20 1.8k 1.7k 618 169 146 74 1.9k
A. E. Zhukov Russia 16 1.6k 0.9× 1.4k 0.9× 652 1.1× 125 0.7× 159 1.1× 58 1.8k
A. O. Kosogov Germany 17 1.5k 0.8× 1.3k 0.8× 635 1.0× 132 0.8× 136 0.9× 27 1.6k
H. Ebe Japan 24 1.6k 0.9× 1.8k 1.1× 472 0.8× 98 0.6× 88 0.6× 78 2.0k
M. N. Charasse France 11 973 0.5× 840 0.5× 371 0.6× 96 0.6× 122 0.8× 23 1.1k
B. Ya. Meltser Russia 17 1.2k 0.7× 987 0.6× 423 0.7× 137 0.8× 152 1.0× 76 1.3k
Olivier Dehaese France 20 1.1k 0.6× 1.0k 0.6× 262 0.4× 69 0.4× 154 1.1× 67 1.2k
P. J. Pearah United States 16 792 0.4× 617 0.4× 208 0.3× 208 1.2× 106 0.7× 35 900
N. A. Maleev Russia 15 996 0.5× 993 0.6× 236 0.4× 104 0.6× 79 0.5× 83 1.1k
D. A. Livshits Russia 24 1.5k 0.8× 1.6k 1.0× 185 0.3× 85 0.5× 89 0.6× 113 1.8k
N. Ohtsuka Japan 17 862 0.5× 899 0.5× 404 0.7× 125 0.7× 83 0.6× 47 1.1k

Countries citing papers authored by B. V. Volovik

Since Specialization
Citations

This map shows the geographic impact of B. V. Volovik's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. V. Volovik with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. V. Volovik more than expected).

Fields of papers citing papers by B. V. Volovik

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. V. Volovik. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. V. Volovik. The network helps show where B. V. Volovik may publish in the future.

Co-authorship network of co-authors of B. V. Volovik

This figure shows the co-authorship network connecting the top 25 collaborators of B. V. Volovik. A scholar is included among the top collaborators of B. V. Volovik based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. V. Volovik. B. V. Volovik is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kovsh, A. R., et al.. (2002). Molecular beam epitaxy growth of GaAsN layers with high luminescence efficiency. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(3). 1158–1162. 38 indexed citations
2.
Cirlin, G. É., B. V. Volovik, A. F. Tsatsul’nikov, et al.. (2001). Optical and structural properties of Ge submonolayer nano-inclusions in a Si matrix grown by molecular beam epitaxy. Nanotechnology. 12(4). 417–420. 1 indexed citations
3.
Zhukov, A. E., B. V. Volovik, S. S. Mikhrin, et al.. (2001). 1.55–1.6 μm electroluminescence of GaAs based diode structures with quantum dots. Technical Physics Letters. 27(9). 734–736. 4 indexed citations
4.
Bimberg, D., Marius Grundmann, F. Heinrichsdorff, et al.. (2000). Quantum dot lasers: breakthrough in optoelectronics. Thin Solid Films. 367(1-2). 235–249. 163 indexed citations
5.
Volovik, B. V., D. S. Sizov, A. F. Tsatsul’nikov, et al.. (2000). The emission from the structures with arrays of coupled quantum dots grown by the submonolayer epitaxy in the spectral range of 1.3–1.4 µm. Semiconductors. 34(11). 1316–1320. 7 indexed citations
6.
Ustinov, V. M., A. E. Zhukov, A. R. Kovsh, et al.. (2000). Long-wavelength quantum dot lasers on GaAs substrates. Nanotechnology. 11(4). 397–400. 12 indexed citations
7.
Maximov, M. V., A. F. Tsatsul’nikov, B. V. Volovik, et al.. (1999). Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm. Applied Physics Letters. 75(16). 2347–2349. 48 indexed citations
8.
Tsatsul’nikov, A. F., D. A. Bedarev, B. V. Volovik, et al.. (1999). Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface. Semiconductors. 33(8). 886–888. 3 indexed citations
9.
Bedarev, D. A., B. V. Volovik, N. N. Ledentsov, et al.. (1999). Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix. Semiconductors. 33(1). 80–84. 9 indexed citations
10.
Zhukov, A. E., A. R. Kovsh, V. M. Ustinov, et al.. (1999). Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate. IEEE Photonics Technology Letters. 11(11). 1345–1347. 85 indexed citations
11.
Zhukov, A. E., A. R. Kovsh, N. A. Maleev, et al.. (1999). Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates. Applied Physics Letters. 75(13). 1926–1928. 90 indexed citations
12.
Tsatsul’nikov, A. F., B. V. Volovik, N. N. Ledentsov, et al.. (1999). Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition. Journal of Electronic Materials. 28(5). 537–541. 9 indexed citations
13.
Kovsh, A. R., A. E. Zhukov, A. Yu. Egorov, et al.. (1999). MBE Growth and Characterization of Composite InAlAs/In(Ga)As Vertically Aligned Quantum Dots. MRS Proceedings. 571. 2 indexed citations
14.
Ustinov, V. M., A. R. Kovsh, A. E. Zhukov, et al.. (1998). Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm. Technical Physics Letters. 24(1). 22–23. 8 indexed citations
15.
Ustinov, V. M., A. E. Zhukov, A. Yu. Egorov, et al.. (1998). Low threshold quantum dot injection laseremitting at 1.9 µm. Electronics Letters. 34(7). 670–672. 41 indexed citations
16.
Tsatsul’nikov, A. F., S. V. Ivanov, P. S. Kop’ev, et al.. (1998). Formation of InSb quantum dots in a GaSb matrix. Journal of Electronic Materials. 27(5). 414–417. 11 indexed citations
17.
Shernyakov, Yu. M., A. Yu. Egorov, B. V. Volovik, et al.. (1998). Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region. Technical Physics Letters. 24(5). 351–353. 3 indexed citations
18.
Volovik, B. V., A. F. Tsatsul’nikov, N. N. Ledentsov, et al.. (1998). Lasing in submonolayer InAs/AlGaAs structures without external optical confinement. Technical Physics Letters. 24(7). 567–569. 1 indexed citations
19.
Sakharov, A. V., S. V. Sorokin, I. L. Krestnikov, et al.. (1997). Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement. Technical Physics Letters. 23(4). 305–306. 5 indexed citations
20.
Tsatsul’nikov, A. F., N. N. Ledentsov, М. В. Максимов, et al.. (1996). Photoluminescence of arrays of vertically coupled, stressed InAs quantum dots in a GaAs (100) matrix. Semiconductors. 30(10). 953–958. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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