James Grandusky

1.1k total citations
52 papers, 928 citations indexed

About

James Grandusky is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, James Grandusky has authored 52 papers receiving a total of 928 indexed citations (citations by other indexed papers that have themselves been cited), including 52 papers in Condensed Matter Physics, 28 papers in Electronic, Optical and Magnetic Materials and 23 papers in Electrical and Electronic Engineering. Recurrent topics in James Grandusky's work include GaN-based semiconductor devices and materials (52 papers), Ga2O3 and related materials (28 papers) and Semiconductor materials and devices (18 papers). James Grandusky is often cited by papers focused on GaN-based semiconductor devices and materials (52 papers), Ga2O3 and related materials (28 papers) and Semiconductor materials and devices (18 papers). James Grandusky collaborates with scholars based in United States, Japan and Germany. James Grandusky's co-authors include L. J. Schowalter, Mark C. Mendrick, Shawn R. Gibb, Craig Moe, Michael Wraback, F. Shahedipour‐Sandvik, J. Smart, Jianfeng Chen, Gregory A. Garrett and V. K. Jindal and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of materials research/Pratt's guide to venture capital sources.

In The Last Decade

James Grandusky

49 papers receiving 893 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
James Grandusky United States 16 860 541 365 301 252 52 928
Hernán Rodríguez Germany 8 778 0.9× 488 0.9× 370 1.0× 280 0.9× 217 0.9× 12 856
Craig Moe United States 18 1.2k 1.3× 734 1.4× 538 1.5× 595 2.0× 394 1.6× 45 1.4k
Atsushi Motogaito Japan 11 693 0.8× 379 0.7× 450 1.2× 167 0.6× 223 0.9× 32 841
Samantha C. Cruz United States 11 1.0k 1.2× 434 0.8× 426 1.2× 392 1.3× 403 1.6× 21 1.2k
D. Tsvetkov United States 16 577 0.7× 274 0.5× 275 0.8× 151 0.5× 376 1.5× 54 778
Alexander V. Markov Russia 18 529 0.6× 358 0.7× 274 0.8× 127 0.4× 393 1.6× 92 812
G. D. Chen United States 11 582 0.7× 363 0.7× 500 1.4× 110 0.4× 318 1.3× 12 866
M. Wróblewski Poland 14 603 0.7× 232 0.4× 325 0.9× 90 0.3× 226 0.9× 26 694
E. Pereira Portugal 14 727 0.8× 358 0.7× 459 1.3× 139 0.5× 188 0.7× 43 935

Countries citing papers authored by James Grandusky

Since Specialization
Citations

This map shows the geographic impact of James Grandusky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by James Grandusky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites James Grandusky more than expected).

Fields of papers citing papers by James Grandusky

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by James Grandusky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by James Grandusky. The network helps show where James Grandusky may publish in the future.

Co-authorship network of co-authors of James Grandusky

This figure shows the co-authorship network connecting the top 25 collaborators of James Grandusky. A scholar is included among the top collaborators of James Grandusky based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with James Grandusky. James Grandusky is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bondokov, Robert T., et al.. (2025). Development of 100 mm AlN Single‐Crystal Growth and Subsequent Substrate Preparation. physica status solidi (b). 262(12). 3 indexed citations
2.
Grandusky, James, et al.. (2025). Structural and optical properties of 100 mm AlN bulk single crystals. Applied Physics Letters. 127(18).
3.
Bondokov, Robert T., et al.. (2021). Two-Inch Aluminum Nitride (AIN) Single Crystal Growth for Commercial Applications. ECS Meeting Abstracts. MA2021-02(34). 985–985. 1 indexed citations
4.
Bondokov, Robert T., et al.. (2021). Two-Inch Aluminum Nitride (AIN) Single Crystal Growth for Commercial Applications. ECS Transactions. 104(7). 37–48. 21 indexed citations
5.
Moe, Craig, et al.. (2017). AlGaN Light‐Emitting Diodes on AlN Substrates Emitting at 230 nm. physica status solidi (a). 215(10). 32 indexed citations
6.
Moe, Craig, James Grandusky, Jianfeng Chen, et al.. (2014). High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8986. 89861V–89861V. 5 indexed citations
7.
Kitamura, K, James Grandusky, Craig Moe, et al.. (2014). S3-P1: Reliability and lifetime of pseudomorphic UVC leds on AlN substrate under various stress condition. 97. 1–5. 2 indexed citations
8.
Chen, Jianfeng, James Grandusky, Mark C. Mendrick, Shawn R. Gibb, & L. J. Schowalter. (2012). Improved photon extraction by substrate thinning and surface roughening in 260 nm pseudomorphic ultraviolet light emitting diodes. 1–4. 2 indexed citations
9.
Gibb, Shawn R., James Grandusky, Mark C. Mendrick, & L. J. Schowalter. (2011). PERFORMANCE OF PSEUDOMORPHIC ULTRAVIOLET LEDs GROWN ON BULK ALUMINUM NITRIDE SUBSTRATES. International Journal of High Speed Electronics and Systems. 20(3). 497–504. 2 indexed citations
10.
Garrett, Gregory A., Anand V. Sampath, H. Shen, et al.. (2010). Evaluation of AlGaN‐based deep ultraviolet emitter active regions by temperature dependent time‐resolved photoluminescence. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(10). 2390–2393. 16 indexed citations
11.
Grandusky, James, Yongjie Cui, Mark C. Mendrick, Shawn R. Gibb, & L. J. Schowalter. (2009). Reliability and Performance of Pseudomorphic Ultraviolet Light Emitting Diodes on Bulk Aluminum Nitride Substrates. MRS Proceedings. 1195. 1 indexed citations
12.
Dai, Qi, et al.. (2008). Effect of dislocations on electrical and optical properties of n-type Al0.34Ga0.66N. Applied Physics Letters. 93(19). 59 indexed citations
13.
Cao, X. A., Hai Lu, E.B. Kaminsky, et al.. (2007). Homoepitaxial growth and electrical characterization of GaN-based Schottky and light-emitting diodes. Journal of Crystal Growth. 300(2). 382–386. 10 indexed citations
14.
Grandusky, James, et al.. (2006). Effect of HVPE GaN Substrate Condition on the Characteristics and Performance of 405 nm LEDs. MRS Proceedings. 916. 1 indexed citations
15.
Grandusky, James, et al.. (2006). Development of pit‐defect free smooth a‐plane GaN surfaces on r‐plane sapphire using metalorganic chemical vapor deposition: A growth mechanism study. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1792–1797. 6 indexed citations
16.
Grandusky, James, et al.. (2006). Selective Area Heteroepitaxy of Nano-AlGaN UV Excitation Sources for Biofluorescence Application. MRS Proceedings. 916. 4 indexed citations
17.
Schowalter, L. J., Sandra Schujman, Mark S. Goorsky, et al.. (2006). Development of native, single crystal AlN substrates for device applications. physica status solidi (a). 203(7). 1667–1671. 18 indexed citations
18.
Shahedipour‐Sandvik, F., James Grandusky, Azar Alizadeh, et al.. (2005). Strain dependent facet stabilization in selective-area heteroepitaxial growth of GaN nanostructures. Applied Physics Letters. 87(23). 10 indexed citations
19.
Grandusky, James, Muhammad Jamil, F. Shahedipour‐Sandvik, et al.. (2005). Optimization of the active region of InGaN∕GaN 405 nm light emitting diodes using statistical design of experiments for determination of interaction effects. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(4). 1576–1581. 3 indexed citations
20.
Jamil, Muhammad, James Grandusky, V. K. Jindal, et al.. (2005). Development of low dislocation and strain reduced GaN on Si(111) by substrate engineering. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5941. 59411E–59411E. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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