L. E. Rodak

497 total citations
25 papers, 392 citations indexed

About

L. E. Rodak is a scholar working on Condensed Matter Physics, Biomedical Engineering and Electrical and Electronic Engineering. According to data from OpenAlex, L. E. Rodak has authored 25 papers receiving a total of 392 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Condensed Matter Physics, 11 papers in Biomedical Engineering and 10 papers in Electrical and Electronic Engineering. Recurrent topics in L. E. Rodak's work include GaN-based semiconductor devices and materials (22 papers), Ga2O3 and related materials (9 papers) and Acoustic Wave Resonator Technologies (8 papers). L. E. Rodak is often cited by papers focused on GaN-based semiconductor devices and materials (22 papers), Ga2O3 and related materials (9 papers) and Acoustic Wave Resonator Technologies (8 papers). L. E. Rodak collaborates with scholars based in United States. L. E. Rodak's co-authors include Michael Wraback, Gregory A. Garrett, James Grandusky, Craig Moe, L. J. Schowalter, Jianfeng Chen, Mark C. Mendrick, Shawn R. Gibb, D. Korakakis and Rakesh Jain and has published in prestigious journals such as Applied Physics Letters, Thin Solid Films and Journal of Crystal Growth.

In The Last Decade

L. E. Rodak

24 papers receiving 374 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. E. Rodak United States 7 348 231 170 135 102 25 392
Marcus Röppischer Germany 10 310 0.9× 187 0.8× 153 0.9× 110 0.8× 97 1.0× 14 372
Lifang Jia China 12 299 0.9× 179 0.8× 134 0.8× 84 0.6× 209 2.0× 28 425
Dolar Khachariya United States 12 362 1.0× 209 0.9× 108 0.6× 99 0.7× 184 1.8× 35 399
Sascha Kreiskott United States 10 257 0.7× 108 0.5× 177 1.0× 69 0.5× 112 1.1× 12 359
Robert A. R. Leute Germany 8 232 0.7× 112 0.5× 120 0.7× 87 0.6× 100 1.0× 17 290
M. Hamilton United States 6 418 1.2× 331 1.4× 140 0.8× 190 1.4× 155 1.5× 8 488
Shuang Qu China 9 352 1.0× 209 0.9× 233 1.4× 53 0.4× 115 1.1× 15 399
Pegah Bagheri United States 12 351 1.0× 224 1.0× 107 0.6× 88 0.7× 214 2.1× 29 397
Hailong Wang China 13 329 0.9× 158 0.7× 132 0.8× 113 0.8× 102 1.0× 29 418
Mark C. Mendrick United States 7 471 1.4× 315 1.4× 200 1.2× 184 1.4× 120 1.2× 17 506

Countries citing papers authored by L. E. Rodak

Since Specialization
Citations

This map shows the geographic impact of L. E. Rodak's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. E. Rodak with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. E. Rodak more than expected).

Fields of papers citing papers by L. E. Rodak

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. E. Rodak. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. E. Rodak. The network helps show where L. E. Rodak may publish in the future.

Co-authorship network of co-authors of L. E. Rodak

This figure shows the co-authorship network connecting the top 25 collaborators of L. E. Rodak. A scholar is included among the top collaborators of L. E. Rodak based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. E. Rodak. L. E. Rodak is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Shatalov, Max, Wenhong Sun, Rakesh Jain, et al.. (2014). High power AlGaN ultraviolet light emitters. Semiconductor Science and Technology. 29(8). 84007–84007. 155 indexed citations
2.
Sampath, Anand V., et al.. (2014). (Invited) Enhancing the Deep Ultraviolet Performance of 4H-SiC Based Photodiodes. ECS Transactions. 61(4). 227–234. 1 indexed citations
3.
Rodak, L. E., Anand V. Sampath, Chad S. Gallinat, et al.. (2013). Solar-blind AlxGa1−xN/AlN/SiC photodiodes with a polarization-induced electron filter. Applied Physics Letters. 103(7). 9 indexed citations
4.
Grandusky, James, Jianfeng Chen, Shawn R. Gibb, et al.. (2013). 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power. Applied Physics Express. 6(3). 32101–32101. 148 indexed citations
5.
Rodak, L. E., et al.. (2013). Improvement in the Light Extraction of Blue InGaN/GaN-Based LEDs Using Patterned Metal Contacts. IEEE Journal of the Electron Devices Society. 2(2). 16–22. 4 indexed citations
6.
Rodak, L. E., Anand V. Sampath, Chad S. Gallinat, et al.. (2012). Aluminum gallium nitride/silicon carbide separate absorption and multiplication avalanche photodiodes. 1–4. 2 indexed citations
7.
Rodak, L. E., et al.. (2012). Large-scale fabrication and observation of self-assembled silica nanospheres on GaN. Microelectronic Engineering. 96. 45–50. 2 indexed citations
8.
Gallinat, Chad S., et al.. (2012). Enhanced THz emission from c-plane InxGa1−xN due to piezoelectric field-induced electron transport. Applied Physics Letters. 100(19). 2 indexed citations
9.
Rodak, L. E., et al.. (2011). Light Emitting Diode Growth on Curved Gallium Nitride Surfaces. MRS Proceedings. 1288. 1 indexed citations
10.
Rodak, L. E., et al.. (2011). InGaN MQW LED structures using AlN/GaN DBR and Ag-based p-contact. MRS Proceedings. 1288. 1 indexed citations
11.
Justice, Joshua, et al.. (2011). Characterization of Group III-Nitride Based Surface Acoustic Wave Devices for High Temperature Applications. MRS Proceedings. 1299. 1 indexed citations
12.
Rodak, L. E. & D. Korakakis. (2011). Influence of the interface on growth rates in AlN/GaN short period superlattices via metal organic vapor phase epitaxy. Applied Physics Letters. 99(20). 2 indexed citations
13.
14.
Rodak, L. E. & D. Korakakis. (2010). Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique. Journal of Electronic Materials. 40(4). 388–393. 4 indexed citations
15.
Rodak, L. E., et al.. (2009). Suspended aluminum nitride structures grown via metal organic vapor phase epitaxy. Materials Letters. 63(18-19). 1571–1573. 2 indexed citations
16.
Famouri, Parviz, et al.. (2008). Effect of contact metals on the piezoelectric properties of aluminum nitride thin films. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 26(4). 1417–1419. 3 indexed citations
17.
Farrell, Richard A., et al.. (2007). High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films. MRS Proceedings. 1052. 15 indexed citations
18.
Rodak, L. E., et al.. (2007). Effect of gas flow on the selective area growth of gallium nitride via metal organic vapor phase epitaxy. Journal of Crystal Growth. 306(1). 75–79. 1 indexed citations
19.
Rodak, L. E., et al.. (2005). Study of epitaxial lateral overgrowth of GaN for application in the fabrication of optoelectronic devices. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6017. 60170D–60170D. 1 indexed citations
20.
Rodak, L. E., et al.. (1975). Optimization irradiation conditions for determination of LD50 in pigs.. PubMed. 150(5). 526–31. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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