M. Shatalov

4.3k total citations
94 papers, 3.5k citations indexed

About

M. Shatalov is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, M. Shatalov has authored 94 papers receiving a total of 3.5k indexed citations (citations by other indexed papers that have themselves been cited), including 89 papers in Condensed Matter Physics, 42 papers in Electronic, Optical and Magnetic Materials and 32 papers in Materials Chemistry. Recurrent topics in M. Shatalov's work include GaN-based semiconductor devices and materials (89 papers), Ga2O3 and related materials (42 papers) and ZnO doping and properties (32 papers). M. Shatalov is often cited by papers focused on GaN-based semiconductor devices and materials (89 papers), Ga2O3 and related materials (42 papers) and ZnO doping and properties (32 papers). M. Shatalov collaborates with scholars based in United States, Lithuania and Sweden. M. Shatalov's co-authors include M. Asif Khan, V. Adivarahan, A. Chitnis, R. Gaška, Jianping Zhang, E. Kuokštis, Shuai Wu, Jinwei Yang, M. S. Shur and Wenhong Sun and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Materials Science.

In The Last Decade

M. Shatalov

87 papers receiving 3.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Shatalov United States 37 3.2k 1.9k 1.3k 1.1k 986 94 3.5k
V. Adivarahan United States 41 3.6k 1.1× 2.0k 1.1× 1.3k 1.0× 1.0k 0.9× 1.6k 1.6× 114 4.0k
Tim Wernicke Germany 37 3.3k 1.1× 1.9k 1.0× 1.5k 1.1× 1.0k 0.9× 1.1k 1.1× 174 3.7k
Yoshitaka Taniyasu Japan 28 2.7k 0.9× 1.5k 0.8× 1.8k 1.4× 1.0k 0.9× 1.2k 1.2× 108 3.7k
Masahiko Sano Japan 25 3.4k 1.1× 1.3k 0.7× 1.6k 1.2× 804 0.7× 1.4k 1.4× 44 4.0k
Degang Zhao China 26 2.5k 0.8× 1.3k 0.7× 1.2k 0.9× 655 0.6× 984 1.0× 254 2.9k
Daniel Feezell United States 34 3.0k 1.0× 1.1k 0.6× 1.3k 1.0× 811 0.7× 1.7k 1.7× 113 3.8k
A. Knauer Germany 36 3.3k 1.1× 2.0k 1.0× 1.5k 1.1× 983 0.9× 1.7k 1.7× 189 4.2k
Martin Straßburg Germany 33 2.3k 0.7× 2.3k 1.2× 3.6k 2.7× 703 0.6× 2.1k 2.1× 148 5.0k
A. J. Fischer United States 25 2.1k 0.7× 992 0.5× 1.1k 0.8× 569 0.5× 1.4k 1.5× 61 3.1k
A. Chitnis United States 26 1.7k 0.5× 964 0.5× 653 0.5× 593 0.5× 634 0.6× 38 1.9k

Countries citing papers authored by M. Shatalov

Since Specialization
Citations

This map shows the geographic impact of M. Shatalov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Shatalov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Shatalov more than expected).

Fields of papers citing papers by M. Shatalov

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Shatalov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Shatalov. The network helps show where M. Shatalov may publish in the future.

Co-authorship network of co-authors of M. Shatalov

This figure shows the co-authorship network connecting the top 25 collaborators of M. Shatalov. A scholar is included among the top collaborators of M. Shatalov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Shatalov. M. Shatalov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Marcinkevičius, S., et al.. (2013). Carrier dynamics and localization in AlInN/GaN heterostructures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 10(5). 853–856. 1 indexed citations
2.
Mickevičius, J., Karolis Kazlauskas, A. Žukauskas, et al.. (2012). Stimulated emission in AlGaN/AlGaN quantum wells with different Al content. Applied Physics Letters. 100(8). 23 indexed citations
3.
Bilenko, Yu., et al.. (2011). Efficiency of Point-of-Use Water Disinfection Using Deep UV Light Emitting Diode Technology. TechConnect Briefs. 3(2011). 612–615. 3 indexed citations
4.
Shatalov, M., Jinwei Yang, Yu. Bilenko, M. S. Shur, & R. Gaška. (2011). High Power III-Nitride UV Emitters. 2 indexed citations
5.
Bilenko, Yu., et al.. (2010). New UV Technology for Point-of-Use Water Disinfection. TechConnect Briefs. 3(2010). 339–342. 3 indexed citations
6.
Tamulaitis, Gintautas, J. Mickevičius, E. Kuokštis, et al.. (2010). Spatially‐resolved photoluminescence study of high indium content InGaN LED structures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(7-8). 1869–1871. 6 indexed citations
7.
Marcinkevičius, S., Jinwei Yang, Yu. Bilenko, et al.. (2009). Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy. Applied Physics Letters. 95(18). 31 indexed citations
8.
Jain, Rahul, Wenhong Sun, Jinwei Yang, et al.. (2008). Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes. Applied Physics Letters. 93(5). 86 indexed citations
9.
Wu, Shuai, Sameer Chhajed, Li Yan, et al.. (2006). Matrix Addressable Micro-Pixel 280nm Deep UV Light-Emitting Diodes. Japanese Journal of Applied Physics. 45(12).
10.
Gong, Zheng, Mikhail Gaevski, V. Adivarahan, et al.. (2006). Optical power degradation mechanisms in AlGaN-based 280nm deep ultraviolet light-emitting diodes on sapphire. Applied Physics Letters. 88(12). 63 indexed citations
11.
Lunev, A. V., X. Hu, Jianyu Deng, et al.. (2005). 10Milliwatt Pulse Operation of 265nm AlGaN Light Emitting Diodes. Japanese Journal of Applied Physics. 44(1). 1 indexed citations
12.
Shatalov, M., Shuai Wu, V. Adivarahan, et al.. (2005). White light generation using 280 nm light emitting diode pumps. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2832–2835. 12 indexed citations
13.
Zhang, Jianping, X. Hu, Yu. Bilenko, et al.. (2004). AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA. Applied Physics Letters. 85(23). 5532–5534. 91 indexed citations
14.
Chen, Changqing, M. Shatalov, E. Kuokštis, et al.. (2004). Optically Pumped Lasing at 353 nm Using Non-polar a-plane AlGaN Multiple Quantum Wells over r-plane Sapphire. Japanese Journal of Applied Physics. 43(8B). L1099–L1099. 8 indexed citations
15.
Adivarahan, V., Shuai Wu, Wenhong Sun, et al.. (2004). High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design. Applied Physics Letters. 85(10). 1838–1840. 69 indexed citations
16.
Zhang, Jianping, Wenhong Sun, V. Adivarahan, et al.. (2003). High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes. Journal of Electronic Materials. 32(5). 364–370. 56 indexed citations
17.
Shatalov, M., G. Simin, V. Adivarahan, et al.. (2002). Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates. Japanese Journal of Applied Physics. 41(Part 1, No. 8). 5083–5087. 55 indexed citations
18.
Shatalov, M., A. Chitnis, Jianping Zhang, et al.. (2002). Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm. Japanese Journal of Applied Physics. 41(Part 2, No. 10B). L1146–L1148. 26 indexed citations
19.
Shatalov, M., A. Chitnis, V. Adivarahan, et al.. (2001). Band-edge luminescence in quaternary AlInGaN light-emitting diodes. Applied Physics Letters. 78(6). 817–819. 41 indexed citations
20.
Chitnis, A., Ajay Kumar, M. Shatalov, et al.. (2000). High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells. Applied Physics Letters. 77(23). 3800–3802. 65 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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