K. Vanheusden

7.5k total citations · 2 hit papers
53 papers, 6.8k citations indexed

About

K. Vanheusden is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, K. Vanheusden has authored 53 papers receiving a total of 6.8k indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 30 papers in Materials Chemistry and 10 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in K. Vanheusden's work include Semiconductor materials and devices (37 papers), Thin-Film Transistor Technologies (10 papers) and Electronic and Structural Properties of Oxides (10 papers). K. Vanheusden is often cited by papers focused on Semiconductor materials and devices (37 papers), Thin-Film Transistor Technologies (10 papers) and Electronic and Structural Properties of Oxides (10 papers). K. Vanheusden collaborates with scholars based in United States, France and Belgium. K. Vanheusden's co-authors include W. L. Warren, D. R. Tallant, C. H. Seager, J. Voigt, Bruce E. Gnade, G. E. Pike, A. Stesmans, Bruce A. Tuttle, R. A. B. Devine and Duane Dimos and has published in prestigious journals such as Nature, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

K. Vanheusden

51 papers receiving 6.6k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Mechanisms behind green photoluminescence in ZnO phosphor powders

1996 3.3k citations K. Vanheusden, W. L. Warren et al. Journal of Applied Physics profile →
Correlation between photoluminescence and oxygen vacancies in ZnO phosphors

1996 1.8k citations K. Vanheusden, C. H. Seager et al. Applied Physics Letters profile →

Peers

Countries citing papers authored by K. Vanheusden

Since Specialization

Citations

This map shows the geographic impact of K. Vanheusden's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Vanheusden with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Vanheusden more than expected).

Fields of papers citing papers by K. Vanheusden

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Vanheusden. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Vanheusden. The network helps show where K. Vanheusden may publish in the future.

Co-authorship network of co-authors of K. Vanheusden

This figure shows the co-authorship network connecting the top 25 collaborators of K. Vanheusden. A scholar is included among the top collaborators of K. Vanheusden based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Vanheusden. K. Vanheusden is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Characterization of interface traps in SOI material 2002 ·K. Vanheusden, W. L. Warren, W. Shedd, (unknown), Daniel M. Fleetwood, J.R. Schwank, R. A. B. Devine	1
2	The role of interface states in hydrogen-annealing-induced mobile proton generation at the Si–SiO2 interface 2000 ·Applied Physics Letters ·K. Vanheusden, R. A. B. Devine	5
3	Reactions and diffusion during annealing-induced H+ generation in SOI buried oxides 1999 ·Microelectronic Engineering ·K. Vanheusden, Daniel M. Fleetwood, R. A. B. Devine, W. L. Warren	6
4	Rechargeable Lithium Battery Cathodes. Nonaqueous Synthesis, Characterization, and Electrochemical Properties of LiCoO₂ 1998 ·Chemistry of Materials ·Timothy J. Boyle, David Ingersoll, Todd M. Alam, (unknown), Mark A. Rodriguez, K. Vanheusden, D.H. Doughty	32
5	The effects of irradiation and proton implantation on the density of mobile protons in SiO/sub 2/ thin films 1998 ·IEEE Transactions on Nuclear Science ·K. Vanheusden, Daniel M. Fleetwood, M.R. Shaneyfelt, B.L. Draper, J.R. Schwank	9
6	Comparative hot carrier induced degradation in 0,25 um MOSFETs with H or D passivated interfaces 1997 ·European Solid-State Device Research Conference ·Jean‐Luc Autran, R. A. B. Devine, W. L. Warren, K. Vanheusden	1
7	H+ and D+ associated charge buildup during annealing of Si/SiO2/Si structures 1997 ·Journal of Non-Crystalline Solids ·K. Vanheusden, W. L. Warren, R. A. B. Devine	12
8	Luminescence, absorption, and site symmetry of Ce activated SrGa2S4 phosphors 1997 ·Applied Physics Letters ·W. L. Warren, K. Vanheusden, Mark A. Rodriguez, C. H. Seager, D. R. Tallant, Philip D. Rack, Paul H. Holloway, B. K. Wagner, Christopher J. Summers, P. N. Yocom	15
9	Non-volatile memory device based on mobile protons in SiO2 thin films 1997 ·Nature ·K. Vanheusden, W. L. Warren, R. A. B. Devine, Daniel M. Fleetwood, J.R. Schwank, M.R. Shaneyfelt, P.S. Winokur, (unknown)	153
10	Correlation between photoluminescence and oxygen vacancies in ZnO phosphors breakdown → 1996 ·Applied Physics Letters ·K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, J. Voigt	1812
11	Voltage Shifts and Defect-Dipoles in Ferroelectric Capacitors 1996 ·MRS Proceedings ·W. L. Warren, G. E. Pike, D. Dimos, K. Vanheusden, Husam N. Alshareef, Bruce A. Tuttle, R. Ramesh, J. T. Evans	15
12	Local Ce environments and their effects on optical properties of SrS phosphors 1996 ·Journal of Applied Physics ·W. L. Warren, K. Vanheusden, C. H. Seager, D. R. Tallant, (unknown), (unknown), (unknown)	18
13	Impact of supplemental implantation of oxygen on defect centers in the separation by implantation of oxygen structure 1995 ·Applied Physics Letters ·K. Vanheusden, A. Stesmans	2
14	Impact of Pb doping on the optical and electronic properties of ZnO powders 1995 ·Applied Physics Letters ·K. Vanheusden, W. L. Warren, J. Voigt, C. H. Seager, D. R. Tallant	74
15	Hydrogen-annealing induced positive charge in buried oxides: correspondence between ESR and C-V results 1995 ·Journal of Non-Crystalline Solids ·K. Vanheusden, A. Stesmans, V. V. Afanas’ev	4
16	Characterization and depth profiling of E′ defects in buried SiO2 1993 ·Journal of Applied Physics ·K. Vanheusden, A. Stesmans	65
17	Depth Profiling of Oxygen Vacancy Defect Generation in Buried SiO₂ 1992 ·MRS Proceedings ·A. Stesmans, K. Vanheusden	4
18	Chemical etch rates in HF solutions as a function of thickness of thermal SiO2 and buried SiO2 formed by oxygen implantation 1991 ·Journal of Applied Physics ·K. Vanheusden, A. Stesmans	27
19	O environment of unpaired Si bonds (Pbdefects) at the (111)Si/SiO2interface 1991 ·Physical review. B, Condensed matter ·A. Stesmans, K. Vanheusden	11
20	Dissimilarity between thermal oxide and buried oxide fabricated by implantation of oxygen on Si revealed by etch rates in HF 1990 ·Applied Physics Letters ·K. Vanheusden, A. Stesmans	9

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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