X. A. Tran

720 total citations
21 papers, 620 citations indexed

About

X. A. Tran is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Cellular and Molecular Neuroscience. According to data from OpenAlex, X. A. Tran has authored 21 papers receiving a total of 620 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 3 papers in Cellular and Molecular Neuroscience. Recurrent topics in X. A. Tran's work include Ferroelectric and Negative Capacitance Devices (17 papers), Advanced Memory and Neural Computing (17 papers) and Semiconductor materials and devices (9 papers). X. A. Tran is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (17 papers), Advanced Memory and Neural Computing (17 papers) and Semiconductor materials and devices (9 papers). X. A. Tran collaborates with scholars based in Singapore, China and France. X. A. Tran's co-authors include H.Y. Yu, Zhongrui Wang, Zheng Fang, Bin Gao, Jinfeng Kang, Yee‐Chia Yeo, Lei Wu, B.-Y. Nguyen, Xiao Wei Sun and An Du and has published in prestigious journals such as Physical Review B, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

X. A. Tran

21 papers receiving 601 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
X. A. Tran Singapore 15 606 168 132 127 13 21 620
Wei-Su Chen Taiwan 15 594 1.0× 138 0.8× 163 1.2× 131 1.0× 11 0.8× 39 612
H. Y. Lee Taiwan 8 554 0.9× 148 0.9× 81 0.6× 90 0.7× 12 0.9× 16 566
M. Balakrishnan United States 7 452 0.7× 162 1.0× 110 0.8× 151 1.2× 28 2.2× 11 474
Jiun-Jia Huang Taiwan 10 529 0.9× 101 0.6× 112 0.8× 103 0.8× 10 0.8× 19 541
Hyung Dong Lee South Korea 7 344 0.6× 128 0.8× 63 0.5× 124 1.0× 10 0.8× 14 356
B. S. Kang South Korea 8 637 1.1× 184 1.1× 140 1.1× 247 1.9× 11 0.8× 11 686
Qingyun Zuo China 9 871 1.4× 212 1.3× 214 1.6× 259 2.0× 11 0.8× 24 877
C. Gopalan United States 10 633 1.0× 203 1.2× 152 1.2× 185 1.5× 30 2.3× 13 660
Y. Gonzalez-Velo United States 15 511 0.8× 139 0.8× 158 1.2× 98 0.8× 12 0.9× 40 539
K. Tsunoda Japan 7 597 1.0× 146 0.9× 120 0.9× 197 1.6× 38 2.9× 17 613

Countries citing papers authored by X. A. Tran

Since Specialization
Citations

This map shows the geographic impact of X. A. Tran's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by X. A. Tran with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites X. A. Tran more than expected).

Fields of papers citing papers by X. A. Tran

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by X. A. Tran. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by X. A. Tran. The network helps show where X. A. Tran may publish in the future.

Co-authorship network of co-authors of X. A. Tran

This figure shows the co-authorship network connecting the top 25 collaborators of X. A. Tran. A scholar is included among the top collaborators of X. A. Tran based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with X. A. Tran. X. A. Tran is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Liu, Wen-Jun, X. A. Tran, Zheng Fang, Hao Xiong, & H.Y. Yu. (2014). A Self-Compliant One-Diode-One-Resistor Bipolar Resistive Random Access Memory for Low Power Application. IEEE Electron Device Letters. 35(2). 196–198. 11 indexed citations
2.
Wu, Wenjuan, et al.. (2013). Switching Model of TaOx-Based Nonpolar Resistive Random Access Memory. Japanese Journal of Applied Physics. 52(4S). 04CD03–04CD03. 5 indexed citations
3.
Tran, X. A., et al.. (2013). A Self-Rectifying Unipolar HfOx Based RRAM Using Doped Germanium Bottom Electrode. ECS Solid State Letters. 2(5). Q35–Q38. 18 indexed citations
4.
Sun, Xiao Wei, X. A. Tran, Zheng Fang, et al.. (2013). Observation of the Ambient Effect in BTI Characteristics of Back-Gated Single Layer Graphene Field Effect Transistors. IEEE Transactions on Electron Devices. 60(8). 2682–2686. 14 indexed citations
5.
Sun, Xiao Wei, X. A. Tran, Zheng Fang, et al.. (2012). $V_{\rm th}$ Shift in Single-Layer Graphene Field-Effect Transistors and Its Correlation With Raman Inspection. IEEE Transactions on Device and Materials Reliability. 12(2). 478–481. 13 indexed citations
6.
Wang, Zhongrui, Weiguang Zhu, An Du, et al.. (2012). Highly Uniform, Self-Compliance, and Forming-Free ALD $\hbox{HfO}_{2}$ -Based RRAM With Ge Doping. IEEE Transactions on Electron Devices. 59(4). 1203–1208. 76 indexed citations
7.
Tran, X. A., Weiguang Zhu, Bin Gao, et al.. (2012). A Self-Rectifying $\hbox{HfO}_{x}$ -Based Unipolar RRAM With NiSi Electrode. IEEE Electron Device Letters. 33(4). 585–587. 21 indexed citations
8.
Tran, X. A., et al.. (2012). Characteristics of a Single-Layer Graphene Field Effect Transistor with UV/Ozone Treatment. ECS Solid State Letters. 2(1). M1–M4. 9 indexed citations
9.
Wang, Zhongrui, Verawati Tjoa, Lei Wu, et al.. (2012). Mechanism of Different Switching Directions in Graphene Oxide Based RRAM. Journal of The Electrochemical Society. 159(6). K177–K182. 14 indexed citations
10.
Sun, Xiao Wei, Zhongyuan Fang, Zhongrui Wang, et al.. (2012). Positive Bias-Induced $V_{\rm th}$ Instability in Graphene Field Effect Transistors. IEEE Electron Device Letters. 33(3). 339–341. 14 indexed citations
11.
Tran, X. A., et al.. (2012). Self-Selection Unipolar $\hbox{HfO}_{x}$ -Based RRAM. IEEE Transactions on Electron Devices. 60(1). 391–395. 29 indexed citations
12.
Wang, Zhongrui, et al.. (2012). Transport properties of HfO2−xbased resistive-switching memories. Physical Review B. 85(19). 53 indexed citations
13.
Tran, X. A., et al.. (2012). A Self-Rectifying $\hbox{AlO}_{y}$ Bipolar RRAM With Sub-50-$\mu\hbox{A}$ Set/Reset Current for Cross-Bar Architecture. IEEE Electron Device Letters. 33(10). 1402–1404. 47 indexed citations
14.
Gao, Bin, Jinfeng Kang, Bing Chen, et al.. (2012). A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application. DR-NTU (Nanyang Technological University). 57. 1–3. 1 indexed citations
15.
Tran, X. A., H.Y. Yu, Yee‐Chia Yeo, et al.. (2011). A High-Yield $\hbox{HfO}_{x}$-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration. IEEE Electron Device Letters. 32(3). 396–398. 49 indexed citations
16.
Gao, Bin, Jinfeng Kang, Baojun Chen, et al.. (2011). Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching. 17.4.1–17.4.4. 68 indexed citations
17.
Tran, X. A., Bo Gao, Jian Kang, et al.. (2011). High performance unipolar AlO y /HfO x /Ni based RRAM compatible with Si diodes for 3D application. National University of Singapore. 44–45. 18 indexed citations
18.
Tran, X. A., H.Y. Yu, Bin Gao, et al.. (2011). Ni Electrode Unipolar Resistive RAM Performance Enhancement by $\hbox{AlO}_{y}$ Incorporation Into $\hbox{HfO}_{x}$ Switching Dielectrics. IEEE Electron Device Letters. 32(9). 1290–1292. 17 indexed citations
19.
Tran, X. A., Bin Gao, Jian Kang, et al.. (2011). Self-rectifying and forming-free unipolar HfO<inf>x</inf> based-high performance RRAM built by fab-avaialbe materials. National University of Singapore. 31.2.1–31.2.4. 24 indexed citations
20.
Fang, Zheng, H.Y. Yu, Zhongrui Wang, et al.. (2010). Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$-Based RRAM Devices. IEEE Electron Device Letters. 31(5). 476–478. 112 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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