Grace Huiqi Wang

832 citations

26 papers · 665 indexed · h-index 12

Co-authors: Yee‐Chia Yeo Eng-Huat Toh Ganesh S. Samudra Lap Chan Guo‐Qiang Lo Ganesh Samudra Dennis Sylvester Chun-Huat Heng
Topics: Advancements in Semiconductor Devices and Circuit Design (23 papers)Semiconductor materials and devices (21 papers)Integrated Circuits and Semiconductor Failure Analysis (11 papers)
Cited by: Electrical and Electronic Engineering Biomedical Engineering Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters Journal of Applied Physics IEEE Transactions on Electron Devices
Partner nations: Singapore United States

In The Last Decade

Grace Huiqi Wang

26 papers receiving 630 citations

Peers

Countries citing papers authored by Grace Huiqi Wang

Since Specialization

Citations

This map shows the geographic impact of Grace Huiqi Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Grace Huiqi Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Grace Huiqi Wang more than expected).

Fields of papers citing papers by Grace Huiqi Wang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Grace Huiqi Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Grace Huiqi Wang. The network helps show where Grace Huiqi Wang may publish in the future.

Co-authorship network of co-authors of Grace Huiqi Wang

This figure shows the co-authorship network connecting the top 25 collaborators of Grace Huiqi Wang. A scholar is included among the top collaborators of Grace Huiqi Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Grace Huiqi Wang. Grace Huiqi Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Reduced Contact Resistance and Improved Surface Morphology of Ohmic Contacts on GaN Employing KrF Laser Irradiation 2011 ·Japanese Journal of Applied Physics ·Grace Huiqi Wang,(unknown),Xincai Wang,(unknown),T. K. Chan,T. Osipowicz,Yong-Lim Foo,S. Tripathy	5
2	Cointegration of In Situ Doped Silicon–Carbon Source and Silicon–Carbon I-Region in P-Channel Silicon Nanowire Impact-Ionization Transistor 2008 ·IEEE Electron Device Letters ·Eng-Huat Toh,Grace Huiqi Wang,Lap Chan,(unknown),Matthias Bauer,(unknown),Shawn Thomas,Ganesh S. Samudra,Yee‐Chia Yeo	7
3	Strained Silicon–Germanium-On-Insulator n-MOSFET With Embedded Silicon Source-and-Drain Stressors 2008 ·IEEE Electron Device Letters ·Grace Huiqi Wang,Eng-Huat Toh,Anyan Du,Guo‐Qiang Lo,Ganesh S. Samudra,Yee‐Chia Yeo	7
4	Device Physics and Performance Optimization of Impact-Ionization Metal–Oxide–Semiconductor Transistors formed using a Double-Spacer Fabrication Process 2008 ·Japanese Journal of Applied Physics ·Eng-Huat Toh,Grace Huiqi Wang,Lap Chan,Ganesh S. Samudra,Yee‐Chia Yeo	5
5	Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications 2008 ·Journal of Applied Physics ·Eng-Huat Toh,Grace Huiqi Wang,Ganesh S. Samudra,Yee‐Chia Yeo	160
6	Realization of Silicon-Germanium-Tin (SiGeSn) Source/Drain Stressors by Sn implant and Solid Phase Epitaxy for strain engineering in SiGe channel P-MOSFETs 2008 ·National University of Singapore ·Grace Huiqi Wang,Eng-Huat Toh,T. K. Chan,T. Osipowicz,Yong-Lim Foo,Chih Hang Tung,Guo‐Qiang Lo,Ganesh S. Samudra,Yee‐Chia Yeo	1
7	P-Channel I-MOS Transistor featuring Silicon Nano-Wire with Multiple-Gates, Strained Si<inf>1-y</inf>C<inf>y</inf> I-region, in situ doped Si<inf>1-y</inf>C<inf>y</inf> Source, and Sub-5 mV/decade Subthreshold Swing 2008 ·National University of Singapore ·Eng-Huat Toh,Grace Huiqi Wang,(unknown),Ming Zhu,Matthias Bauer,(unknown),Lap Chan,Shawn Thomas,Ganesh S. Samudra,Yee‐Chia Yeo	2
8	A Double-Spacer I-MOS Transistor With Shallow Source Junction and Lightly Doped Drain for Reduced Operating Voltage and Enhanced Device Performance 2008 ·IEEE Electron Device Letters ·Eng-Huat Toh,Grace Huiqi Wang,Lap Chan,Ganesh Samudra,Yee‐Chia Yeo	14
9	Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing 2007 ·Applied Physics Letters ·Grace Huiqi Wang,Eng-Huat Toh,Xincai Wang,S. Tripathy,T. Osipowicz,T. K. Chan,(unknown),S. Balakumar,Guo‐Qiang Lo,Ganesh S. Samudra,Yee‐Chia Yeo	15
10	Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region 2007 ·IEEE Transactions on Electron Devices ·Eng-Huat Toh,Grace Huiqi Wang,Lap Chan,Guo‐Qiang Lo,Ganesh Samudra,Yee‐Chia Yeo	32
11	Impact Ionization Nanowire Transistor with Multiple-Gates, Silicon-Germanium Impact Ionization Region, and Sub-5 mV/decade Subtheshold Swing 2007 ·National University of Singapore ·Eng-Huat Toh,Grace Huiqi Wang,Ming Zhu,Chen Shen,Lap Chan,Guo‐Qiang Lo,(unknown),Dennis Sylvester,Chun-Huat Heng,Ganesh Samudra,Yee‐Chia Yeo	9
12	A Strained N-channel Impact-ionization MOS (I-MOS) Transistor with Elevated Silicon-Carbon Source/Drain for Performance Enhancement 2007 ·National University of Singapore ·Eng-Huat Toh,Grace Huiqi Wang,Guo‐Qiang Lo,(unknown),Lap Chan,Ganesh Samudra,Yee‐Chia Yeo	2
13	Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization 2007 ·Applied Physics Letters ·Eng-Huat Toh,Grace Huiqi Wang,Ganesh S. Samudra,Yee‐Chia Yeo	119
14	Strained Silicon–Germanium-on-Insulator n-Channel Transistor with Silicon Source and Drain Regions for Performance Enhancement 2007 ·Japanese Journal of Applied Physics ·Grace Huiqi Wang,Eng-Huat Toh,Chih-Hang Tung,Anyan Du,Guo‐Qiang Lo,Ganesh S. Samudra,Yee‐Chia Yeo	2
15	Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors 2007 ·Applied Physics Letters ·Eng-Huat Toh,Grace Huiqi Wang,Lap Chan,Ganesh S. Samudra,Yee‐Chia Yeo	7
16	A complementary-I-MOS technology featuring SiGe channel and i-region for enhancement of impact-ionization, breakdown voltage, and performance 2007 ·National University of Singapore ·Eng-Huat Toh,Grace Huiqi Wang,Lap Chan,Guo‐Qiang Lo,Dennis Sylvester,Chun-Huat Heng,Ganesh S. Samudra,Yee‐Chia Yeo	2
17	Silicon-Germanium-Tin (SiGeSn) Source and Drain Stressors formed by Sn Implant and Laser Annealing for Strained Silicon-Germanium Channel P-MOSFETs 2007 ·National University of Singapore ·Grace Huiqi Wang,Eng-Huat Toh,Xincai Wang,Debbie Hwee Leng Seng,S. Tripathy,T. Osipowicz,T. K. Chan,Keat Mun Hoe,S. Balakumar,Chih Hang Tung,Guo‐Qiang Lo,Ganesh S. Samudra,Yee‐Chia Yeo	4
18	High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealing 2006 ·Applied Physics Letters ·Grace Huiqi Wang,Eng-Huat Toh,Yong-Lim Foo,Chih-Hang Tung,(unknown),Ganesh S. Samudra,Yee‐Chia Yeo	15
19	A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor 2006 ·Eng-Huat Toh,Grace Huiqi Wang,Guo‐Qiang Lo,N. Balasubramanian,Chih-Hang Tung,F. Bénistant,Lap Chan,Ganesh Samudra,Yee‐Chia Yeo	19
20	Strained Silicon-Germanium-on-Insulator N-MOSFETs Featuring Lattice Mismatched Source/Drain Stressor and High-Stress Silicon Nitride Liner 2006 ·National University of Singapore ·Grace Huiqi Wang,Eng-Huat Toh,(unknown),Keat Mun Hoe,S. Tripathy,S. Balakumar,Guo‐Qiang Lo,Ganesh S. Samudra,Yee‐Chia Yeo	3

About Grace Huiqi Wang

Grace Huiqi Wang is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Biomedical Engineering, having authored 26 papers that have together received 665 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (23 papers), Semiconductor materials and devices (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). The work is most often cited by research in Electrical and Electronic Engineering (657 citations), Biomedical Engineering (145 citations) and Atomic and Molecular Physics, and Optics (41 citations). Grace Huiqi Wang has collaborated with scholars based in Singapore and United States. Frequent co-authors include Yee‐Chia Yeo, Eng-Huat Toh, Ganesh S. Samudra, Lap Chan, Guo‐Qiang Lo, Ganesh Samudra, Dennis Sylvester, Chun-Huat Heng, Chih-Hang Tung and Yong-Lim Foo. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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