Ruize Sun

1.3k total citations
96 papers, 905 citations indexed

About

Ruize Sun is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Ruize Sun has authored 96 papers receiving a total of 905 indexed citations (citations by other indexed papers that have themselves been cited), including 72 papers in Electrical and Electronic Engineering, 57 papers in Condensed Matter Physics and 20 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Ruize Sun's work include GaN-based semiconductor devices and materials (57 papers), Silicon Carbide Semiconductor Technologies (50 papers) and Semiconductor materials and devices (31 papers). Ruize Sun is often cited by papers focused on GaN-based semiconductor devices and materials (57 papers), Silicon Carbide Semiconductor Technologies (50 papers) and Semiconductor materials and devices (31 papers). Ruize Sun collaborates with scholars based in China, Singapore and United Kingdom. Ruize Sun's co-authors include Wanjun Chen, Bo Zhang, Chao Liu, Cezhou Zhao, Yung C. Liang, Fangzhou Wang, Zhaoji Li, Yee‐Chia Yeo, Xiaorui Xu and Yun Xia and has published in prestigious journals such as Applied Physics Letters, Scientific Reports and International Journal of Molecular Sciences.

In The Last Decade

Ruize Sun

83 papers receiving 876 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ruize Sun China 17 719 607 212 113 112 96 905
Paolo Magnone Italy 20 1.3k 1.8× 349 0.6× 151 0.7× 205 1.8× 108 1.0× 112 1.4k
Jingcun Liu United States 19 1.0k 1.5× 688 1.1× 336 1.6× 98 0.9× 197 1.8× 37 1.3k
Xiucheng Huang United States 20 2.1k 2.9× 1.0k 1.7× 145 0.7× 103 0.9× 55 0.5× 40 2.2k
Christian Uhrenfeldt Denmark 20 1.2k 1.7× 138 0.2× 88 0.4× 38 0.3× 148 1.3× 60 1.3k
David Reusch United States 21 1.8k 2.5× 763 1.3× 83 0.4× 56 0.5× 39 0.3× 47 1.8k
Nando Kaminski Germany 17 976 1.4× 184 0.3× 61 0.3× 104 0.9× 85 0.8× 77 1.0k
Beomseok Lee South Korea 14 558 0.8× 111 0.2× 211 1.0× 59 0.5× 66 0.6× 23 792
Ling Xia China 9 260 0.4× 148 0.2× 64 0.3× 54 0.5× 41 0.4× 32 337
Yu Hasegawa Japan 9 196 0.3× 99 0.2× 106 0.5× 320 2.8× 74 0.7× 28 583
John Glaser United States 17 978 1.4× 208 0.3× 71 0.3× 70 0.6× 37 0.3× 50 1.1k

Countries citing papers authored by Ruize Sun

Since Specialization
Citations

This map shows the geographic impact of Ruize Sun's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ruize Sun with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ruize Sun more than expected).

Fields of papers citing papers by Ruize Sun

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ruize Sun. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ruize Sun. The network helps show where Ruize Sun may publish in the future.

Co-authorship network of co-authors of Ruize Sun

This figure shows the co-authorship network connecting the top 25 collaborators of Ruize Sun. A scholar is included among the top collaborators of Ruize Sun based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ruize Sun. Ruize Sun is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chen, Wanjun, Fangzhou Wang, Xiaoming Wang, et al.. (2025). First Experimental Demonstration of TiN x O y Resistive Field Plate on p-GaN HEMTs With Simultaneously Enhanced BV and Ron. IEEE Transactions on Electron Devices. 72(8). 4241–4245. 1 indexed citations
2.
Zhang, Yinghui, Meng Zhang, Xiaofei Wang, et al.. (2024). Effect of the main properties of membrane materials on denitrification of hydrogen-based membrane biofilm reactors (H2-MBfRs). Journal of Water Process Engineering. 66. 105975–105975. 1 indexed citations
3.
Sun, Fuchun, et al.. (2024). Digital-Twin-Assisted Skill Learning for 3C Assembly Tasks. IEEE Transactions on Cybernetics. 54(7). 3852–3863. 5 indexed citations
4.
Liu, Chao, Yijun Shi, Zhiyuan He, et al.. (2023). A GaN Lateral Bidirectional ESD Clamp Based on the Floating-Gate MBS and a Regulating Capacitor. IEEE Transactions on Electron Devices. 71(1). 510–515. 4 indexed citations
5.
Wang, Xiaoming, Wanjun Chen, Ruize Sun, et al.. (2023). Failure Behavior and Mechanism of p-GaN Gate AlGaN/GaN HEMTs in the Third Quadrant Under Repetitive Surge Current Stress. IEEE Transactions on Electron Devices. 71(3). 1694–1701. 5 indexed citations
6.
Liu, Chao, Yijun Shi, Zhiyuan He, et al.. (2023). The ESD Behavior of D-Mode GaN MIS-HEMT. IEEE Transactions on Electron Devices. 70(12). 6196–6203. 4 indexed citations
7.
Liu, Chao, Shu-yi Zhang, Wanjun Chen, et al.. (2023). Study on Transient Turn-On Characteristics of Pulse Power Thyristor-Type Devices Under Ultrahigh di/dt Condition. IEEE Transactions on Electron Devices. 70(2). 640–646. 6 indexed citations
8.
Wang, Fangzhou, Yujian Zhang, Ruize Sun, et al.. (2022). High Voltage Normally-Off p-GaN Gate HEMT with the Compatible High Threshold and Drain Current. ECS Journal of Solid State Science and Technology. 11(8). 85009–85009. 3 indexed citations
9.
Li, Fan, Ruize Sun, Ivona Z. Mitrović, et al.. (2022). A 4-Transistor Monolithic Solution to Highly Linear On-Chip Temperature Sensing in GaN Power Integrated Circuits. IEEE Electron Device Letters. 44(2). 333–336. 15 indexed citations
10.
Shi, Yijun, Zhiyuan He, Yun Huang, et al.. (2022). Experimental Investigation and Model Analysis on a GaN Electrostatic Discharge Clamp. IEEE Journal of the Electron Devices Society. 10. 976–982. 1 indexed citations
11.
Xu, Xiaorui, Wanjun Chen, Shu-yi Zhang, et al.. (2022). Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect. IEEE Transactions on Electron Devices. 69(6). 3277–3282. 7 indexed citations
12.
Chen, Wanjun, Ruize Sun, Fangzhou Wang, et al.. (2022). Experimental Demonstration of an Integrated Bidirectional Gate ESD Protection Structure for p-GaN Power HEMTs. IEEE Electron Device Letters. 44(2). 209–212. 6 indexed citations
13.
Sun, Ruize, et al.. (2022). Temperature Dependence of Pulsed Power Performance of Insulated Gate Trigger Thyristor. IEEE Transactions on Electron Devices. 69(3). 1211–1218.
14.
Xu, Xiaorui, Wanjun Chen, Chao Liu, et al.. (2021). A Novel Thyristor-Based Bidirectional SSCB With Controllable Current Breaking Capability. IEEE Transactions on Power Electronics. 37(4). 4526–4534. 22 indexed citations
15.
Wang, Fangzhou, Wanjun Chen, Ruize Sun, et al.. (2020). An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps. Journal of Physics D Applied Physics. 54(9). 95107–95107. 18 indexed citations
16.
Wang, Fangzhou, Wanjun Chen, Xiaorui Xu, et al.. (2020). Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism. IEEE Transactions on Electron Devices. 68(1). 175–183. 23 indexed citations
17.
Liu, Chao, Wanjun Chen, Ruize Sun, et al.. (2020). Voltage Coupling Enhancement for Transient Gate Overvoltage Suppression of Insulated Gate Trigger Thyristor in Ultrahigh di/dt Pulse Applications. IEEE Transactions on Power Electronics. 36(3). 3346–3353. 5 indexed citations
18.
Bu, Qinglei, Yutao Cai, Ruize Sun, et al.. (2019). Monolithic integration design of GaN-based power chip including gate driver for high-temperature DC–DC converters. Japanese Journal of Applied Physics. 58(5). 56505–56505. 37 indexed citations
19.
Sun, Ruize, Qinglei Bu, Wen Liu, et al.. (2019). Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters. IEEE Access. 7. 184375–184384. 40 indexed citations
20.
Sun, Ruize, et al.. (2016). Design of power integrated circuits in full AlGaN/GaN MIS‐HEMT configuration for power conversion. physica status solidi (a). 214(3). 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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