M. L. Huang

921 citations

24 papers · 813 · h-index 14

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices

Papers in

Electrical and Electronic Engineering 22
- Semiconductor materials and devices 22
- Advancements in Semiconductor Devices and Circuit Design 5
- Ferroelectric and Negative Capacitance Devices 3
Atomic and Molecular Physics, and Optics 12
- Semiconductor materials and interfaces 9

Co-authors: J. Kwo (18 shared papers)M. Hong (7 shared papers)Yen‐Chung Chang (3 shared papers)P. Chang (5 shared papers)Y. J. Lee (3 shared papers)Tai‐Bor Wu (2 shared papers)Chih‐Ju Chang (1 shared paper)M. Hong (10 shared papers)
Journals: Applied Physics Letters (8 papers)Microelectronic Engineering (3 papers)Journal of Crystal Growth (2 papers)Solid-State Electronics (1 paper)Thin Solid Films (1 paper)
Partner nations: Taiwan United States Italy

In The Last Decade

M. L. Huang

24 papers receiving 799 citations

Peers

Countries citing papers authored by M. L. Huang

Since Specialization

Citations

This map shows the geographic impact of M. L. Huang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. L. Huang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. L. Huang more than expected).

Fields of papers citing papers by M. L. Huang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. L. Huang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. L. Huang. The network helps show where M. L. Huang may publish in the future.

Co-authors

The 25 scholars most cited alongside M. L. Huang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. L. Huang Line = papers co-authored together M. L. Huang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3 Applied Physics Letters ·M. L. Huang, Yen‐Chung Chang, Chih‐Ju Chang, Y. J. Lee, P. Chang, J. Kwo, Tai‐Bor Wu, M. Hong	2005	291
2	Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN Applied Physics Letters ·Yen‐Chung Chang, H. C. Chiu, Y. J. Lee, M. L. Huang, K. Y. Lee, M. Hong, Y.N. Chiu, J. Kwo, Y. H. Wang	2007	108
3	Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics Microelectronic Engineering ·Y. C. Chang, M. L. Huang, Yu‐Han Chang, Y.J. Lee, H. C. Chiu, J. Kwo, M. Hong	2011	83
4	Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition Applied Physics Letters ·T.D. Lin, Y. H. Chang, Chao‐An Lin, M. L. Huang, Wen‐Chung Lee, J. Kwo, M. Hong	2012	46
5	Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant Applied Physics Letters ·Zisheng Yang, W. C. Lee, Y. J. Lee, P. Chang, M. L. Huang, M. Hong, Chia‐Hung Hsu, J. Kwo	2007	44
6	Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition Applied Physics Letters ·Y. H. Chang, Chao‐An Lin, Y. T. Liu, T. H. Chiang, H. Y. Lin, M. L. Huang, T. D. Lin, T. W. Pi, J. Kwo, M. Hong	2012	29
7	Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs Microelectronic Engineering ·Yu‐Han Chang, M. L. Huang, Pei-Ching Chang, Chao‐An Lin, Yung‐Ching Chu, B.R. Chen, Chih-Hui Hsu, J. Kwo, T.-W. Pi, M. Hong	2010	27
8	In<inf>0.53</inf>Ga<inf>0.47</inf>As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate M. L. Huang, S. W. Chang, M. K. Chen, Cuncai Fan, H. T. Lin, C. H. Lin, Ronfu Chu, K. Y. Lee, Mrunal A. Khaderbad, Z. C. Chen, C. H. Lin, (unknown), Li-Te Lin, Hong-Nien Lin, Hanwen Chang, Chenxue Yang, Yuet‐Kin Leung, Yee‐Chia Yeo, S. M. Jang, H. Y. Hwang, C.H. Diaz	2015	26
9	Observation of room temperature ferromagnetic behavior in cluster-free, Co doped HfO2 films Applied Physics Letters ·Yu‐Han Chang, Y. L. Soo, Wen‐Chung Lee, M. L. Huang, Y. J. Lee, S. C. Weng, W. H. Sun, M. Hong, J. Kwo, Shang‐Fan Lee, J. M. Ablett, C.-C. Kao	2007	23
10	Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high-κ dielectrics on Ge without interfacial layers Solid-State Electronics ·Li‐Kang Chu, R. L. Chu, T. D. Lin, W.C. Lee, Chao‐An Lin, M. L. Huang, Y.J. Lee, J. Kwo, M. Hong	2010	23
11	High performance In<inf>0.53</inf>Ga<inf>0.47</inf>As FinFETs fabricated on 300 mm Si substrate M. L. Huang, S. W. Chang, M. K. Chen, Yusuke Oniki, H. C. Chen, C. H. Lin, WooJe Lee, C. H. Lin, Mrunal A. Khaderbad, K. Y. Lee, Z. C. Chen, Pei‐Kang Tsai, Li-Te Lin, Meng‐Hao Tsai, (unknown), Tsung-Yi Huang, Yen-Chih Lin, Yee‐Chia Yeo, S. M. Jang, H. Y. Hwang, Howard C.-H. Wang, C.H. Diaz	2016	18
12	Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111) Applied Physics Letters ·Zisheng Yang, Wen‐Chung Lee, Y. J. Lee, P. Chang, M. L. Huang, M. Hong, Kunhao Yu, Mau-Tsu Tang, Bi‐Hsuan Lin, Chia‐Hung Hsu, J. Kwo	2007	17
13	High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations AIP Advances ·C. H. Wang, G. Doornbos, Gvidas Astromskas, G. Vellianitis, R. Oxland, M. Holland, M. L. Huang, C. H. Lin, C. H. Hsieh, Young‐Soo Chang, T. L. Lee, Y. Y. Chen, P. Ramvall, Erik Lind, Wei Hsu, Lars‐Erik Wernersson, Ravi Droopad, M. Passlack, C.H. Diaz	2014	16
14	Growth mechanism of atomic layer deposited Al2O3 on GaAs(001)-4 × 6 surface with trimethylaluminum and water as precursors Applied Physics Letters ·M. L. Huang, Y. H. Chang, T. D. Lin, Hsuan-Yin Lin, Y. T. Liu, T.-W. Pi, M. Hong, J. Kwo	2012	15
15	Structural and magnetic properties of epitaxial Fe3Si/GaAs heterostructures Journal of Crystal Growth ·You-Ren Hsu, Y.J. Lee, Yizhe Chang, M. L. Huang, Y.N. Chiu, Chun-Yu Ho, P. Chang, Chun‐Hua Hsu, M. Hong, J. Kwo	2007	11
16	Defining new frontiers in electronic devices with high κ dielectrics and interfacial engineering Thin Solid Films ·M. Hong, W.C. Lee, M. L. Huang, Yen‐Chung Chang, T.D. Lin, Y.J. Lee, J. Kwo, Chia‐Hung Hsu, H.Y. Lee	2007	8
17	A novel approach of using a MBE template for ALD growth of high-κ dielectrics Journal of Crystal Growth ·Kuen Yong Lee, W.C. Lee, M. L. Huang, Chia‐Hsuan Chang, Y.J. Lee, Yi-Shi Chiu, Tai‐Bor Wu, M. Hong, Raynien Kwo	2007	7
18	Si metal-oxide-semiconductor devices with high κ HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·C. H. Pan, J. Kwo, K. Y. Lee, W. C. Lee, Li‐Kang Chu, M. L. Huang, Y. J. Lee, M. Hong	2008	5
19	High performance self-aligned inversion-channel MOSFETs with In<inf>0.53</inf>Ga<inf>0.47</inf>As channel and ALD-Al<inf>2</inf>O<inf>3</inf> gate dielectric H. C. Chiu, Pei-Ching Chang, M. L. Huang, T. D. Lin, Yizhe Chang, Jifu Huang, Shin-Chih Chen, J. Kwo, Wilman Tsai, M. Hong	2009	5
20	InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Chao‐An Lin, M. L. Huang, Pei C. Chiu, Heng‐Kuang Lin, J.‐I. Chyi, T. H. Chiang, Wen‐Chung Lee, Y. C. Chang, Yu‐Han Chang, Gail J. Brown, J. Kwo, M. Hong	2012	4

About M. L. Huang

M. L. Huang is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Electronic, Optical and Magnetic Materials and Condensed Matter Physics, having authored 24 papers that have together received 813 indexed citations. Recurring topics across this work include Semiconductor materials and devices (22 papers), Electronic and Structural Properties of Oxides (9 papers), Semiconductor materials and interfaces (9 papers), Ga2O3 and related materials (6 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers), Ferroelectric and Negative Capacitance Devices (3 papers), GaN-based semiconductor devices and materials (3 papers) and ZnO doping and properties (2 papers). The work is most often cited by research in Condensed Matter Physics (185 citations), Electrical and Electronic Engineering (739 citations), Electronic, Optical and Magnetic Materials (194 citations), Materials Chemistry (351 citations) and Atomic and Molecular Physics, and Optics (223 citations). M. L. Huang has collaborated with scholars based in Taiwan, United States and Italy. Frequent co-authors include J. Kwo, M. Hong, Yen‐Chung Chang, P. Chang, Y. J. Lee, Tai‐Bor Wu, Chih‐Ju Chang, M. Hong, H. C. Chiu and Yu‐Han Chang. Their work appears in journals such as Applied Physics Letters, Microelectronic Engineering, Journal of Crystal Growth, Solid-State Electronics and Thin Solid Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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M. L. Huang

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