Hock-Chun Chin

631 citations

36 papers · 546 indexed · h-index 13

Co-authors: Yee‐Chia Yeo Xiao Gong Xinke Liu Ming Zhu Ganesh S. Samudra Chih-Hang Tung Lanxiang Wang Luping Shi
Topics: Semiconductor materials and devices (34 papers)Advancements in Semiconductor Devices and Circuit Design (25 papers)Semiconductor materials and interfaces (12 papers)
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Condensed Matter Physics
Journals: Applied Physics Letters Journal of Applied Physics Journal of The Electrochemical Society
Partner nations: Singapore Taiwan United States

In The Last Decade

Hock-Chun Chin

35 papers receiving 534 citations

Peers

Countries citing papers authored by Hock-Chun Chin

Since Specialization

Citations

This map shows the geographic impact of Hock-Chun Chin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hock-Chun Chin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hock-Chun Chin more than expected).

Fields of papers citing papers by Hock-Chun Chin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hock-Chun Chin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hock-Chun Chin. The network helps show where Hock-Chun Chin may publish in the future.

Co-authorship network of co-authors of Hock-Chun Chin

This figure shows the co-authorship network connecting the top 25 collaborators of Hock-Chun Chin. A scholar is included among the top collaborators of Hock-Chun Chin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hock-Chun Chin. Hock-Chun Chin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Germanium Multiple-Gate Field-Effect Transistors Formed on Germanium-on-Insulator Substrate 2013 ·IEEE Transactions on Electron Devices ·Bin Liu,Xiao Gong,Chunlei Zhan,Genquan Han,Hock-Chun Chin,(unknown),(unknown),Yongdong Liu,Jiangtao Hu,Nicolas Daval,(unknown),D. Delprat,Bich-Yen Nguyen,Yee‐Chia Yeo	16
2	Metrology solutions for high performance germanium multi-gate field-effect transistors using optical scatterometry 2013 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Hock-Chun Chin,(unknown),Bin Liu,Xingui Zhang,Jie Li,Yongdong Liu,Jiangtao Hu,Yee‐Chia Yeo	1
3	Metrology solutions using optical scatterometry for advanced CMOS: III-V and Germanium multi-gate field-effect transistors 2013 ·National University of Singapore ·Hock-Chun Chin,Bin Liu,Xingui Zhang,(unknown),(unknown),Yongdong Liu,Jiangtao Hu,Yee‐Chia Yeo	4
4	Source/Drain Engineering for In_0.7Ga_0.3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain withIn situDoping for Series Resistance Reduction 2011 ·Japanese Journal of Applied Physics ·Xiao Gong,Hock-Chun Chin,(unknown),Lanxiang Wang,(unknown),Benzhong Wang,(unknown),Yee‐Chia Yeo	3
5	Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon–germanium nanowires 2010 ·Journal of Applied Physics ·Hock-Chun Chin,Xiao Gong,Tien Khee Ng,Wan Khai Loke,Choun Pei Wong,Zexiang Shen,Satrio Wicaksono,Soon Fatt Yoon,Yee‐Chia Yeo	0
6	Fluorine Incorporation in HfAlO Gate Dielectric for Defect Passivation and Effect on Electrical Characteristics of In[sub 0.53]Ga[sub 0.47]As n-MOSFETs 2010 ·Electrochemical and Solid-State Letters ·Hock-Chun Chin,Xiao Gong,Lanxiang Wang,Yee‐Chia Yeo	9
7	III–V MOSFETs with a new self-aligned contact 2010 ·National University of Singapore ·Xingui Zhang,(unknown),Chih-Hsin Ko,C. Wann,Chao-Ching Cheng,(unknown),Hock-Chun Chin,Xiao Gong,(unknown),Guang-Li Luo,Chun‐Yen Chang,Chao-Hsin Chien,(unknown),Shih‐Chiang Huang,Yee‐Chia Yeo	9
8	In situ Surface Passivation of Gallium Nitride for Metal–Organic Chemical Vapor Deposition of High-Permittivity Gate Dielectric 2010 ·IEEE Transactions on Electron Devices ·Xinke Liu,Hock-Chun Chin,(unknown),Yee‐Chia Yeo	12
9	Self-Aligned Gate-First In[sub 0.7]Ga[sub 0.3]As n-MOSFETs with an InP Capping Layer for Performance Enhancement 2010 ·Electrochemical and Solid-State Letters ·Xiao Gong,(unknown),Hock-Chun Chin,Zhu Zhu,You-Ru Lin,Chih-Hsin Ko,C. Wann,Yee‐Chia Yeo	15
10	A new self-aligned contact technology for III-V MOSFETs 2010 ·National University of Singapore ·(unknown),Xingui Zhang,Hock-Chun Chin,Xiao Gong,(unknown),Chunlei Zhan,Guang-Li Luo,Chun‐Yen Chang,(unknown),Chao-Hsin Chien,(unknown),Shih‐Chiang Huang,Chao-Ching Cheng,(unknown),C. Wann,Yee‐Chia Yeo	6
11	Self-Aligned NiGeSi Contacts on Gallium Arsenide for III-V MOSFETs 2010 ·ECS Transactions ·Xingui Zhang,(unknown),Hock-Chun Chin,Xiao Gong,(unknown),Yee‐Chia Yeo	6
12	Lattice-Mismatched $\hbox{In}_{0.4}\hbox{Ga}_{0.6} \hbox{As}$ Source/Drain Stressors With In Situ Doping for Strained $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel n-MOSFETs 2009 ·IEEE Electron Device Letters ·Hock-Chun Chin,Xiao Gong,Xinke Liu,Yee‐Chia Yeo	49
13	In-Situ Surface Passivation and Metal-Gate/High-κDielectric Stack Formation for N-channel Gallium Arsenide Metal-Oxide-Semiconductor Field-Effect Transistors 2008 ·National University of Singapore ·Hock-Chun Chin,Ming Zhu,S. J. Whang,Chih-Hang Tung,Ganesh S. Samudra,Yee‐Chia Yeo	3
14	Source and Drain Series Resistance Reduction for N-Channel Transistors Using Solid Antimony (Sb) Segregation (SSbS) During Silicidation 2008 ·IEEE Electron Device Letters ·(unknown),(unknown),Hock-Chun Chin,Lap Chan,Ganesh Samudra,Yee‐Chia Yeo	3
15	n-Channel GaAs MOSFET with TaN∕HfAlO Gate Stack Formed Using In Situ Vacuum Anneal and Silane Passivation 2008 ·Journal of The Electrochemical Society ·Hock-Chun Chin,Ming Zhu,Ganesh S. Samudra,Yee‐Chia Yeo	16
16	In Situ Silane Passivation of Gallium Arsenide and Deposition of High-Permittivity Gate Dielectric for MOS Applications 2007 ·Journal of The Electrochemical Society ·Ming Zhu,Hock-Chun Chin,Chih-Hang Tung,Yee‐Chia Yeo	7
17	N-channel MOSFETs with In-situ Silane-Passivated Gallium Arsenide Channel and CMOS-Compatible Palladium-Germanium Contacts 2007 ·Hock-Chun Chin,Ming Zhu,(unknown),Ganesh S. Samudra,Yee‐Chia Yeo	2
18	Strained In 0.53 Ga 0.47 As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering 2006 ·Symposium on VLSI Technology ·Hock-Chun Chin,Xiao Gong,Xinke Liu,(unknown),Yee‐Chia Yeo	9
19	Carrier Transport Characteristics of Sub-30 nm Strained N-Channel FinFETs Featuring Silicon-Carbon Source/Drain Regions and Methods for Further Performance Enhancement 2006 ·National University of Singapore ·Tsung-Yang Liow,(unknown),Hock-Chun Chin,Rinus T. P. Lee,Chih-Hang Tung,Ganesh S. Samudra,N. Balasubramanian,Yee‐Chia Yeo	17
20	Preparation and characterization of carbon-sulfur surface compounds 1981 ·Carbon ·Hock-Chun Chin	111

About Hock-Chun Chin

Hock-Chun Chin is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics, having authored 36 papers that have together received 546 indexed citations. Recurring topics across this work include Semiconductor materials and devices (34 papers), Advancements in Semiconductor Devices and Circuit Design (25 papers) and Semiconductor materials and interfaces (12 papers). The work is most often cited by research in Electrical and Electronic Engineering (465 citations), Atomic and Molecular Physics, and Optics (152 citations) and Condensed Matter Physics (46 citations). Hock-Chun Chin has collaborated with scholars based in Singapore, Taiwan and United States. Frequent co-authors include Yee‐Chia Yeo, Xiao Gong, Xinke Liu, Ming Zhu, Ganesh S. Samudra, Chih-Hang Tung, Xinke Liu, Lanxiang Wang, Luping Shi and L.S. Tan. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

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