W. Hafez

1.6k total citations
28 papers, 546 citations indexed

About

W. Hafez is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, W. Hafez has authored 28 papers receiving a total of 546 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 5 papers in Condensed Matter Physics. Recurrent topics in W. Hafez's work include Radio Frequency Integrated Circuit Design (19 papers), Semiconductor Quantum Structures and Devices (16 papers) and Advancements in Semiconductor Devices and Circuit Design (15 papers). W. Hafez is often cited by papers focused on Radio Frequency Integrated Circuit Design (19 papers), Semiconductor Quantum Structures and Devices (16 papers) and Advancements in Semiconductor Devices and Circuit Design (15 papers). W. Hafez collaborates with scholars based in United States. W. Hafez's co-authors include M. Feng, Ming Feng, N. Holonyak, Jie-Wei Lai, N.E. Harff, Jiefeng Lin, C. Tsai, S. Kulkarni, C.-H. Jan and Peng Bai and has published in prestigious journals such as Applied Physics Letters, IEEE Journal of Solid-State Circuits and IEEE Electron Device Letters.

In The Last Decade

W. Hafez

28 papers receiving 517 citations

Peers

Countries citing papers authored by W. Hafez

Since Specialization

Citations

This map shows the geographic impact of W. Hafez's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Hafez with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Hafez more than expected).

Fields of papers citing papers by W. Hafez

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Hafez. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Hafez. The network helps show where W. Hafez may publish in the future.

Co-authorship network of co-authors of W. Hafez

This figure shows the co-authorship network connecting the top 25 collaborators of W. Hafez. A scholar is included among the top collaborators of W. Hafez based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Hafez. W. Hafez is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	A 32nm high-k and metal-gate anti-fuse array featuring a 1.01µm<sup>2</sup> 1T1C bit cell 2012 ·S. Kulkarni, Sangwoo Pae, Zhanping Chen, W. Hafez, (unknown), Anisur Rahman, (unknown), Uddalak Bhattacharya, (unknown), Guomin Zhang	3
2	Reliability studies of a 32nm System-on-Chip (SoC) platform technology with 2<inf>nd</inf> generation high-k/metal gate transistors 2011 ·Anisur Rahman, M. Agostinelli, Peng Bai, G. Curello, H. Deshpande, W. Hafez, (unknown), K. Komeyli, Jang Hyeok Park, K. Phoa, C. Tsai, J.-Y. Yeh, Jianzhong Xu	11
3	A 1.1 GHz 12 $\mu$A/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications 2008 ·IEEE Journal of Solid-State Circuits ·Yuxiao Wang, (unknown), Uddalak Bhattacharya, Zhanping Chen, (unknown), Fatih Hamzaoglu, W. Hafez, (unknown), Pramod Kolar, S. Kulkarni, Jiefeng Lin, Yong-Gee Ng, (unknown), Liqiong Wei, Ying Zhang, Guomin Zhang, M. Bohr	49
4	A 1.1GHz 12μA/Mb-Leakage SRAM Design in 65nm Ultra-Low-Power CMOS with Integrated Leakage Reduction for Mobile Applications 2007 ·Yuxiao Wang, Jiefeng Lin, Yat Hon Ng, I. Post, (unknown), Yu Zhang, Kedong Zhang, M. Bohr, (unknown), Uma Bhattacharya, (unknown), Fatih Hamzaoglu, W. Hafez, C.-H. Jan, (unknown), S. Kulkarni	25
5	Performance enhancement of composition-graded-base type-II InP∕GaAsSb double-heterojunction bipolar transistors with fT>500GHz 2006 ·Applied Physics Letters ·(unknown), (unknown), W. Hafez, K. Y. Cheng, M. Feng	20
6	A 65nm CMOS SOC Technology Featuring Strained Silicon Transistors for RF Applications 2006 ·I. Post, M.S. Akbar, G. Curello, (unknown), W. Hafez, (unknown), K. Komeyli, Jiefeng Lin, N. Lindert, Jang Hyeok Park, J. Rizk, (unknown), C. Tsai, David Yeh, Peng Bai, C.-H. Jan	37
7	High performance, sub-50nm MOSFETS for mixed signal applications 2006 ·V. Dimitrov, J.B. Heng, (unknown), (unknown), R. Chan, J. Feng, W. Hafez, T. Sorsch, W Mansfield, J.F. Miner, A. Kornblit, F. Klemens, J. E. Bower, Raymond A. Cirelli, E. Ferry, A. H. Taylor, M. Feng, G. Timp	7
8	Ultra-High Speed Composition Graded InGaAsSb/GaAsSb Double Heterojunction Bipolar Transistors with fT=500GHz grown by Gas-Source Molecular Beam Epitaxy 2006 ·(unknown), (unknown), W. Hafez, M. Feng, K. Y. Cheng	2
9	12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710GHz and fMAX=340GHz 2005 ·Applied Physics Letters ·W. Hafez, (unknown), M. Feng	55
10	Over 500 GHz InP heterojunction bipolar transistors 2005 ·M. Feng, W. Hafez, Jie-Wei Lai	2
11	VERTICAL SCALING OF TYPE I InP HBT WITH FT > 500 GHZ 2005 ·Jie-Wei Lai, W. Hafez, M. Feng	1
12	Process and performance improvements to type-II GaAsSb/InP DHBTs 2005 ·B. Chu-Kung, (unknown), W. Hafez, M. Feng	2
13	0.25 μm emitter InP SUBTs with f/sub T/= 550 GHz and BV /sub CEO/ < 2V 2005 ·W. Hafez, M. Feng	3
14	0.25 μm emitter InP SHBTs with f T = 550 GHz and BV CEO > 2V 2004 ·W. Hafez, M. Feng	2
15	Lateral scaling of 0.25 µm InP/InGaAs SHBTs with InAs emitter cap 2004 ·Electronics Letters ·W. Hafez, Mei Feng	9
16	VERTICAL SCALING OF TYPE I InP HBT WITH F_T > 500 GHZ 2004 ·International Journal of High Speed Electronics and Systems ·Jie-Wei Lai, W. Hafez, (unknown)	2
17	Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors 2003 ·Applied Physics Letters ·Ming Feng, N. Holonyak, W. Hafez	97
18	Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with f_T of 452 GHz 2003 ·IEEE Electron Device Letters ·W. Hafez, Jie-Wei Lai, M. Feng	14
19	Record f _T and f _T + f _MAX performance of InP/InGaAs single heterojunction bipolar transistors 2003 ·Electronics Letters ·W. Hafez, Jie-Wei Lai, Ming Feng	9
20	Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA 2003 ·IEEE Electron Device Letters ·W. Hafez, Jie-Wei Lai, M. Feng	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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