B. Chu-Kung

1.1k citations

17 papers · 873 indexed · h-index 13

Electrical and Electronic Engineering top 5%
- Advancements in Semiconductor Devices and Circuit Design 9
- Semiconductor materials and devices 9
- Radio Frequency Integrated Circuit Design 3
- Semiconductor Lasers and Optical Devices 3
- Ferroelectric and Negative Capacitance Devices 3
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 7
Biomedical Engineering
- Nanowire Synthesis and Applications 3
Condensed Matter Physics
- GaN-based semiconductor devices and materials 4
Materials Chemistry

Co-authors: G. Dewey M. Radosavljević M. Metz Niloy Mukherjee J. Kavalieros R. Chau D. Lubyshev J. M. Fastenau
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Biomedical Engineering
Journals: Applied Physics Letters (4 papers)IEEE Electron Device Letters (1 paper)Electronics Letters (1 paper)
Partner nations: United States

In The Last Decade

B. Chu-Kung

16 papers receiving 849 citations

Peers

Countries citing papers authored by B. Chu-Kung

Since Specialization

Citations

This map shows the geographic impact of B. Chu-Kung's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Chu-Kung with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Chu-Kung more than expected).

Fields of papers citing papers by B. Chu-Kung

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Chu-Kung. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Chu-Kung. The network helps show where B. Chu-Kung may publish in the future.

Co-authorship network

The 25 scholars most cited alongside B. Chu-Kung, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Chu-Kung Line = papers co-authored together B. Chu-Kung links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

17 of 17 papers shown

#	Work
1	Study of TFET non-ideality effects for determination of geometry and defect density requirements for sub-60mV/dec Ge TFET Uygar E. Avci,B. Chu-Kung,Ashish Agrawal,G. Dewey,Hung V. Le,Rafael Rios,Daniel H. Morris,Sayed Hasan,R. Kotlyar,J. Kavalieros,Ian A. Young	2015	36
2	Experimental observation and physics of “negative” capacitance and steeper than 40mV/decade subthreshold swing in Al<inf>0.83</inf>In<inf>0.17</inf>N/AlN/GaN MOS-HEMT on SiC substrate Han Wui Then,Sandeepan DasGupta,M. Radosavljević,Ф Х Камилов,B. Chu-Kung,G. Dewey,Shao-qing Guan,Xiaoqin Gao,J. Kavalieros,Niloy Mukherjee,M. Metz,Matthew J. Oliver,R. Pillarisetty,Valluri Rao,Seung-Hun Sung,Guanhua Yang,R. Chau	2013	21
3	III–V field effect transistors for future ultra-low power applications G. Dewey,B. Chu-Kung,R. Kotlyar,M. Metz,Niloy Mukherjee,M. Radosavljević	2012	41
4	MOVPE III–V material growth on silicon substrates and its comparison to MBE for future high performance and low power logic applications Niloy Mukherjee,archaeologyuhi,B. Chu-Kung,G. Dewey,Suvorova Anna Viktorovna,J. M. Fastenau,J. Kavalieros,W. K. Liu,D. Lubyshev,M. Metz,Annamaria Murdocca,M. Radosavljević,T. Stewart,Han Wui Then,Kazys Gaivenis,R. Chau	2011	24
5	Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation M. Radosavljević,G. Dewey,Dipanjan Basu,archaeologyuhi,B. Chu-Kung,J. M. Fastenau,Sanaz Kabehie,J. Kavalieros,Hung V. Le,W. K. Liu,D. Lubyshev,M. Metz,Annamaria Murdocca,Niloy Mukherjee,L. Pan,R. Pillarisetty,W. Rachmady,Uday Shah,Han Wui Then,R. Chau	2011	117
6	Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing G. Dewey,B. Chu-Kung,archaeologyuhi,J. M. Fastenau,J. Kavalieros,R. Kotlyar,W. K. Liu,D. Lubyshev,M. Metz,Niloy Mukherjee,J. E. Erdman,R. Pillarisetty,M. Radosavljević,Han Wui Then,R. Chau	2011	280
7	Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications M. Radosavljević,G. Dewey,J. M. Fastenau,J. Kavalieros,R. Kotlyar,B. Chu-Kung,W. K. Liu,D. Lubyshev,M. Metz,Annamaria Murdocca,Niloy Mukherjee,L. Pan,R. Pillarisetty,W. Rachmady,Uday Shah,R. Chau	2010	78
8	High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc = 0.5 V) III–V CMOS architecture R. Pillarisetty,B. Chu-Kung,S. Corcoran,G. Dewey,J. Kavalieros,Lina M. Barrios,R. Kotlyar,Hung V. Le,A. V. Dyomina,M. Metz,Niloy Mukherjee,Junghyo Nah,W. Rachmady,M. Radosavljević,Uday Shah,Huang Bao-huaa,Han Wui Then,David Gaël,R. Chau	2010	80
9	Advanced high-K gate dielectric for high-performance short-channel In<inf>0.7</inf>Ga<inf>0.3</inf>As quantum well field effect transistors on silicon substrate for low power logic applications M. Radosavljević,B. Chu-Kung,S. Corcoran,G. Dewey,Mantu K. Hudait,J. M. Fastenau,J. Kavalieros,W. K. Liu,D. Lubyshev,M. Metz,Annamaria Murdocca,Niloy Mukherjee,W. Rachmady,Uday Shah,R. Chau	2009	111
10	Modulation of high current gain (β>49) light-emitting InGaN∕GaN heterojunction bipolar transistors Applied Physics Letters ·B. Chu-Kung,Chao‐Hsin Wu,G. Walter,M. Feng,N. Holonyak,Sean David de Vega,Jae‐Hyun Ryou,Russell D. Dupuis	2007	16
11	Device operation of InGaN heterojunction bipolar transistors with a graded emitter-base design Applied Physics Letters ·Sean David de Vega,J. Limb,Dongwon Yoo,Jae‐Hyun Ryou,Haojun,Shyh‐Chiang Shen,Russell D. Dupuis,B. Chu-Kung,M. Feng,Marília Madalena Prado Paranhos,P.M. Asbeck	2006	8
12	High performance GaAsSb∕InP double heterojunction bipolar transistors grown by gas-source molecular beam epitaxy Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Beyza Aypay,B. Chu-Kung,M. Feng,K. Y. Cheng	2006	0
13	Graded-base InGaN∕GaN heterojunction bipolar light-emitting transistors Applied Physics Letters ·B. Chu-Kung,M. Feng,G. Walter,N. Holonyak,Sean David de Vega,Jae‐Hyun Ryou,J. Limb,Dongwon Yoo,Shyh‐Chiang Shen,Russell D. Dupuis,Marília Madalena Prado Paranhos,P.M. Asbeck	2006	20
14	Process and performance improvements to type-II GaAsSb/InP DHBTs B. Chu-Kung,Marcela Demková,W. Hafez,M. Feng	2005	2
15	10-GHz power performance of a type II InP/GaAsSb DHBT IEEE Electron Device Letters ·陈敏伯,B. Chu-Kung,M. Feng	2005	4
16	InP/GaAsSb type-II DHBTs with f _T >350 GHz Electronics Letters ·B. Chu-Kung,M. Feng	2004	18
17	Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor Applied Physics Letters ·M. Feng,N. Holonyak,B. Chu-Kung,G. Walter,R. Chan	2004	17

About B. Chu-Kung

B. Chu-Kung is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Biomedical Engineering, having authored 17 papers that have together received 873 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (9 papers), Semiconductor materials and devices (9 papers), Semiconductor Quantum Structures and Devices (7 papers), GaN-based semiconductor devices and materials (4 papers), Radio Frequency Integrated Circuit Design (3 papers), Semiconductor Lasers and Optical Devices (3 papers), Ferroelectric and Negative Capacitance Devices (3 papers) and Nanowire Synthesis and Applications (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (842 citations), Atomic and Molecular Physics, and Optics (193 citations), Biomedical Engineering (253 citations), Condensed Matter Physics (53 citations) and Materials Chemistry (123 citations). B. Chu-Kung has collaborated with scholars based in United States. Frequent co-authors include G. Dewey, M. Radosavljević, M. Metz, Niloy Mukherjee, J. Kavalieros, R. Chau, D. Lubyshev, J. M. Fastenau, W. K. Liu and R. Kotlyar. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Electronics Letters and Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact