B. Chu-Kung

1.1k total citations
17 papers, 873 citations indexed

About

B. Chu-Kung is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, B. Chu-Kung has authored 17 papers receiving a total of 873 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 4 papers in Condensed Matter Physics. Recurrent topics in B. Chu-Kung's work include Advancements in Semiconductor Devices and Circuit Design (9 papers), Semiconductor materials and devices (9 papers) and Semiconductor Quantum Structures and Devices (7 papers). B. Chu-Kung is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (9 papers), Semiconductor materials and devices (9 papers) and Semiconductor Quantum Structures and Devices (7 papers). B. Chu-Kung collaborates with scholars based in United States. B. Chu-Kung's co-authors include G. Dewey, M. Radosavljević, M. Metz, Niloy Mukherjee, J. Kavalieros, R. Chau, D. Lubyshev, J. M. Fastenau, W. K. Liu and R. Kotlyar and has published in prestigious journals such as Applied Physics Letters, IEEE Electron Device Letters and Electronics Letters.

In The Last Decade

B. Chu-Kung

16 papers receiving 849 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
B. Chu-Kung United States	13	842	253	193	123	53	17	873
Dimitri Lederer Belgium	15	1.1k 1.4×	157 0.6×	198 1.0×	94 0.8×	46 0.9×	104	1.2k
W. K. Liu United States	11	762 0.9×	238 0.9×	203 1.1×	99 0.8×	16 0.3×	15	797
Rinus T. P. Lee Singapore	12	414 0.5×	76 0.3×	173 0.9×	102 0.8×	62 1.2×	33	469
David Kohen United States	13	479 0.6×	128 0.5×	217 1.1×	177 1.4×	34 0.6×	35	508
P.D. Ye United States	10	628 0.7×	116 0.5×	186 1.0×	202 1.6×	32 0.6×	19	674
Henri Mariette France	12	371 0.4×	223 0.9×	274 1.4×	307 2.5×	98 1.8×	33	558
Khalifa M. Azizur-Rahman United States	9	322 0.4×	323 1.3×	200 1.0×	168 1.4×	36 0.7×	16	447
G. Signorello Switzerland	6	258 0.3×	287 1.1×	185 1.0×	146 1.2×	45 0.8×	9	396
A. Chou United States	11	657 0.8×	71 0.3×	80 0.4×	114 0.9×	20 0.4×	24	684
Ezekiel A. Anyebe United Kingdom	11	262 0.3×	254 1.0×	189 1.0×	141 1.1×	29 0.5×	18	369

Countries citing papers authored by B. Chu-Kung

Since Specialization

Citations

This map shows the geographic impact of B. Chu-Kung's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Chu-Kung with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Chu-Kung more than expected).

Fields of papers citing papers by B. Chu-Kung

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Chu-Kung. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Chu-Kung. The network helps show where B. Chu-Kung may publish in the future.

Co-authorship network of co-authors of B. Chu-Kung

This figure shows the co-authorship network connecting the top 25 collaborators of B. Chu-Kung. A scholar is included among the top collaborators of B. Chu-Kung based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Chu-Kung. B. Chu-Kung is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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17 of 17 papers shown

Avci, Uygar E., B. Chu-Kung, Ashish Agrawal, et al.. (2015). Study of TFET non-ideality effects for determination of geometry and defect density requirements for sub-60mV/dec Ge TFET. 34.5.1–34.5.4. 36 indexed citations

Then, Han Wui, Sandeepan DasGupta, M. Radosavljević, et al.. (2013). Experimental observation and physics of “negative” capacitance and steeper than 40mV/decade subthreshold swing in Al<inf>0.83</inf>In<inf>0.17</inf>N/AlN/GaN MOS-HEMT on SiC substrate. 28.3.1–28.3.4. 21 indexed citations

Dewey, G., B. Chu-Kung, R. Kotlyar, et al.. (2012). III–V field effect transistors for future ultra-low power applications. 45–46. 41 indexed citations

Mukherjee, Niloy, B. Chu-Kung, G. Dewey, et al.. (2011). MOVPE III–V material growth on silicon substrates and its comparison to MBE for future high performance and low power logic applications. 158. 35.1.1–35.1.4. 24 indexed citations

Radosavljević, M., G. Dewey, Dipanjan Basu, et al.. (2011). Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation. 33.1.1–33.1.4. 117 indexed citations

Dewey, G., B. Chu-Kung, J. M. Fastenau, et al.. (2011). Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing. 33.6.1–33.6.4. 280 indexed citations

Radosavljević, M., G. Dewey, J. M. Fastenau, et al.. (2010). Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications. 6.1.1–6.1.4. 78 indexed citations

Pillarisetty, R., B. Chu-Kung, S. Corcoran, et al.. (2010). High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc = 0.5 V) III–V CMOS architecture. 6.7.1–6.7.4. 80 indexed citations

Radosavljević, M., B. Chu-Kung, S. Corcoran, et al.. (2009). Advanced high-K gate dielectric for high-performance short-channel In<inf>0.7</inf>Ga<inf>0.3</inf>As quantum well field effect transistors on silicon substrate for low power logic applications. 1–4. 111 indexed citations

10.

Chu-Kung, B., Chao‐Hsin Wu, G. Walter, et al.. (2007). Modulation of high current gain (β>49) light-emitting InGaN∕GaN heterojunction bipolar transistors. Applied Physics Letters. 91(23). 232114–232114. 16 indexed citations

11.

Limb, J., Dongwon Yoo, Jae‐Hyun Ryou, et al.. (2006). Device operation of InGaN heterojunction bipolar transistors with a graded emitter-base design. Applied Physics Letters. 88(18). 8 indexed citations

12.

Chu-Kung, B., et al.. (2006). High performance GaAsSb∕InP double heterojunction bipolar transistors grown by gas-source molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(3). 1564–1567.

13.

Chu-Kung, B., M. Feng, G. Walter, et al.. (2006). Graded-base InGaN∕GaN heterojunction bipolar light-emitting transistors. Applied Physics Letters. 89(8). 20 indexed citations

14.

Chu-Kung, B., et al.. (2005). Process and performance improvements to type-II GaAsSb/InP DHBTs. 2 indexed citations

15.

Chu-Kung, B., et al.. (2005). 10-GHz power performance of a type II InP/GaAsSb DHBT. IEEE Electron Device Letters. 26(9). 604–606. 4 indexed citations

16.

Chu-Kung, B. & M. Feng. (2004). InP/GaAsSb type-II DHBTs with f _T >350 GHz. Electronics Letters. 40(20). 1305–1306. 18 indexed citations

17.

Feng, M., N. Holonyak, B. Chu-Kung, G. Walter, & R. Chan. (2004). Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor. Applied Physics Letters. 84(23). 4792–4794. 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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