Yat Hon Ng

434 total citations
22 papers, 300 citations indexed

About

Yat Hon Ng is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Yat Hon Ng has authored 22 papers receiving a total of 300 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Condensed Matter Physics, 16 papers in Electrical and Electronic Engineering and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Yat Hon Ng's work include GaN-based semiconductor devices and materials (18 papers), Semiconductor materials and devices (11 papers) and Silicon Carbide Semiconductor Technologies (7 papers). Yat Hon Ng is often cited by papers focused on GaN-based semiconductor devices and materials (18 papers), Semiconductor materials and devices (11 papers) and Silicon Carbide Semiconductor Technologies (7 papers). Yat Hon Ng collaborates with scholars based in Hong Kong, China and United States. Yat Hon Ng's co-authors include Kevin J. Chen, Zheyang Zheng, Tao Chen, Sirui Feng, Li Zhang, Wenjie Song, Uma Bhattacharya, M. Bohr, Kedong Zhang and Yu Zhang and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and IEEE Transactions on Electron Devices.

In The Last Decade

Yat Hon Ng

21 papers receiving 284 citations

Peers

Countries citing papers authored by Yat Hon Ng

Since Specialization

Citations

This map shows the geographic impact of Yat Hon Ng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yat Hon Ng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yat Hon Ng more than expected).

Fields of papers citing papers by Yat Hon Ng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yat Hon Ng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yat Hon Ng. The network helps show where Yat Hon Ng may publish in the future.

Co-authorship network of co-authors of Yat Hon Ng

This figure shows the co-authorship network connecting the top 25 collaborators of Yat Hon Ng. A scholar is included among the top collaborators of Yat Hon Ng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yat Hon Ng. Yat Hon Ng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Stacked Strongly Coupled GaN/SiC Cascode Device With Fast Switching and Reclaimed Strong dv/dt Control 2025 ·IEEE Transactions on Electron Devices ·Ji Shu, (unknown), Mian Tao, Yat Hon Ng, Sirui Feng, (unknown), (unknown), Jiahui Sun, S. W. Ricky Lee, Kevin J. Chen	2
2	Enhanced Photon-Generated Hole Spreading in p-GaN Gate Double-Channel HEMT for Suppression of Back-Gating Effect from Si Substrate 2025 ·(unknown), Tao Chen, Yat Hon Ng, Haochen Zhang, (unknown), (unknown), Hang Liao, (unknown), Yumeng Huang, Kevin J. Chen	0
3	Monolithically Integrated GaN Comparator Based on Complementary Logic 2024 ·IEEE Transactions on Electron Devices ·(unknown), Zheyang Zheng, Li Zhang, (unknown), Tao Chen, Sirui Feng, Yat Hon Ng, Jiahui Sun, Ji Shu, Hang Liao, Xu Han, Haochen Zhang, Kevin J. Chen	2
4	p-GaN gate power HEMT heterostructure as a versatile platform for extremely wide-temperature-range (X-WTR) applications 2024 ·Applied Physics Letters ·Yat Hon Ng, Zheyang Zheng, Li Zhang, (unknown), Tao Chen, Sirui Feng, Qiming Shao, Kevin J. Chen	15
5	A Monolithic Bi-Directional GaN/SiC Hybrid Field-Effect Transistor 2024 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Yingchen Yang, Sirui Feng, (unknown), Tao Chen, (unknown), (unknown), Yat Hon Ng, Hang Liao, Yumeng Huang, (unknown), Zheyang Zheng, Kevin J. Chen	5
6	Gate Characteristics of Enhancement-Mode Fully Depleted p -GaN Gate HEMT 2023 ·IEEE Electron Device Letters ·Jiahui Sun, (unknown), (unknown), Zheyang Zheng, Yat Hon Ng, Ji Shu, Kevin J. Chen, (unknown)	9
7	HyFET—A GaN/SiC Hybrid Field-Effect Transistor 2023 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Sirui Feng, Zheyang Zheng, Yuru Wang, Gang Lyu, Kai Liu, (unknown), Junting Chen, Tao Chen, Li Zhang, Wenjie Song, Hang Liao, Yat Hon Ng, Mengyuan Hua, Kai Cheng, Jin Wei, Kevin J. Chen	9
8	Linearity Characterization of Enhancement- Mode p-GaN Gate Radio-Frequency HEMT 2023 ·IEEE Electron Device Letters ·(unknown), Zheyang Zheng, Yat Hon Ng, Kevin J. Chen	7
9	Impact of Inadequate Mg Activation on Dynamic Threshold Voltage of Schottky-type $p$-GaN Gate HEMTs 2023 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Jiahui Sun, Zheyang Zheng, Li Zhang, Yat Hon Ng, Ji Shu, Tao Chen, Kevin J. Chen	6
10	Distribution and transport of holes in the p-GaN/AlGaN/GaN heterostructure 2023 ·Applied Physics Letters ·Yat Hon Ng, Zheyang Zheng, Li Zhang, (unknown), Tao Chen, Sirui Feng, Qiming Shao, Kevin J. Chen	11
11	Strain Release in GaN Epitaxy on 4° Off‐Axis 4H‐SiC 2022 ·Advanced Materials ·Sirui Feng, Zheyang Zheng, (unknown), Yat Hon Ng, Wenjie Song, Tao Chen, Li Zhang, Kai Liu, Kai Cheng, Kevin J. Chen	24
12	Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation 2022 ·IEEE Electron Device Letters ·Hang Liao, Zheyang Zheng, Tao Chen, Li Zhang, (unknown), Sirui Feng, Yat Hon Ng, (unknown), Yuan Li, Kevin J. Chen	20
13	RF Enhancement-Mode p-GaN Gate HEMT on 200 mm-Si Substrates 2022 ·IEEE Electron Device Letters ·(unknown), Yat Hon Ng, Zheyang Zheng, Kevin J. Chen	25
14	SiN/in-situ-GaON Staggered Gate Stack on p-GaN for Enhanced Stability in Buried-Channel GaN p-FETs 2021 ·2021 IEEE International Electron Devices Meeting (IEDM) ·Li Zhang, Zheyang Zheng, (unknown), Yat Hon Ng, Sirui Feng, Wenjie Song, Tao Chen, Kevin J. Chen	26
15	Threshold Voltage Instability of Enhancement-Mode GaN Buried p-Channel MOSFETs 2021 ·IEEE Electron Device Letters ·Zheyang Zheng, Li Zhang, Wenjie Song, Tao Chen, Sirui Feng, Yat Hon Ng, Jiahui Sun, Han Xu, Song Yang, Jin Wei, Kevin J. Chen	24
16	Impact Ionization Induced Breakdown and Related HTRB Behaviors in 100-V p-GaN Gate HEMTs 2021 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·(unknown), Yuru Wang, Sirui Feng, Zheyang Zheng, Tao Chen, Gang Lyu, Yat Hon Ng, Kevin J. Chen	5
17	Observation and characterization of impact ionization-induced OFF-state breakdown in Schottky-type p-GaN gate HEMTs 2021 ·Applied Physics Letters ·(unknown), Yuru Wang, Sirui Feng, Zheyang Zheng, Tao Chen, Gang Lyu, Yat Hon Ng, Kevin J. Chen	18
18	A 4.0 GHz 291Mb voltage-scalable SRAM design in 32nm high-κ metal-gate CMOS with integrated power management 2009 ·Yuxiao Wang, Uma Bhattacharya, Fatih Hamzaoglu, (unknown), Yat Hon Ng, Lili Wei, Yu Zhang, Kedong Zhang, M. Bohr	36
19	A 1.1GHz 12μA/Mb-Leakage SRAM Design in 65nm Ultra-Low-Power CMOS with Integrated Leakage Reduction for Mobile Applications 2007 ·Yuxiao Wang, Jiefeng Lin, Yat Hon Ng, I. Post, (unknown), Yu Zhang, Kedong Zhang, M. Bohr, (unknown), Uma Bhattacharya, (unknown), Fatih Hamzaoglu, W. Hafez, C.-H. Jan, (unknown), S. Kulkarni	25
20	A fully synchronized, pipelined, and re-configurable 50 Mb SRAM on 90 nm CMOS technology for logic applications 2004 ·Kedong Zhang, Uma Bhattacharya, Le Ma, Yat Hon Ng, B. Zheng, M. Bohr, Scott E. Thompson	14

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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