K. Ohyu

803 citations

36 papers · 601 indexed · h-index 15

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
- Silicon Carbide Semiconductor Technologies
- Thin-Film Transistor Technologies
Computational Mechanics top 10%
- Ion-surface interactions and analysis

Papers in

Electrical and Electronic Engineering 36
- Semiconductor materials and devices 24
- Advancements in Semiconductor Devices and Circuit Design 21
- Integrated Circuits and Semiconductor Failure Analysis 19
- Silicon and Solar Cell Technologies 11
- Thin-Film Transistor Technologies 4
- Ferroelectric and Negative Capacitance Devices 3
- Silicon Carbide Semiconductor Technologies 3
Atomic and Molecular Physics, and Optics 8
- Semiconductor materials and interfaces 7

Co-authors: Yasushiro Nishioka N. Natsuaki M. Tamura Yuzuru Ohji Toshio Ando Yuki Mori R. Yamada K. Mukai
Journals: Japanese Journal of Applied Physics (4 papers)IEEE Electron Device Letters (3 papers)IEEE Transactions on Electron Devices (3 papers)Applied Physics Letters (2 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (2 papers)
Partner nations: Japan United States United Kingdom

In The Last Decade

K. Ohyu

34 papers receiving 569 citations

Peers

Countries citing papers authored by K. Ohyu

Since Specialization

Citations

This map shows the geographic impact of K. Ohyu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Ohyu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Ohyu more than expected).

Fields of papers citing papers by K. Ohyu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Ohyu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Ohyu. The network helps show where K. Ohyu may publish in the future.

Co-authorship network

The 25 scholars most cited alongside K. Ohyu, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with K. Ohyu Line = papers co-authored together K. Ohyu links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	The Origin of Variable Retention Time in DRAM -- Fluctuation of Junction Leakage IEICE Technical Report; IEICE Tech. Rep. ·Yuki Mori, K. Ohyu, 尚子長井, Tran Thao Nguyen	2006	1
2	Improvement of Data Retention Time Property by Reducing Vacancy-Type Defect in DRAM Cell Transistor 尚子長井, K. Ohyu, T. Umeda, Patel Miteshkumar Manharbhai, Shinji Fujieda	2006	6
3	The origin of variable retention time in DRAM Yuki Mori, K. Ohyu, 尚子長井, R. Yamada	2006	46
4	Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories Applied Physics Letters ·T. Umeda, 尚子長井, K. Ohyu, Shinya Tsukada, Keisuke Hamada, A.V. Tsirulsky, Yasunori Mochizuki	2006	26
5	Physical and Microscopic Understanding of Data Retention Properties of DRAM 尚子長井, K. Ohyu	2005	0
6	A new experimental method for evaluating electric field at the junctions of DRAM cell transistors and the effect of electric field strength on the retention characteristics of DRAM Yuki Mori, W. Hu, S. Kimura, K. Ohyu, Hiroyuki Uchiyama, R. Yamada	2004	0
7	0.1 mu m CMOS devices using low-impurity-channel transistors (LICT) Masashi Aoki, Tatsuya Ishii, Teizo Yoshimura, Y. Kiyota, Kh. Kh. Yakubov, Toshiaki Yamanaka, T. Kure, K. Ohyu, Takashi Nishida, Shinji Okazaki, Kazuhiko Seki, K. Shimohigashi	2002	10
8	Advanced device process technology for 0.3 mu m self-aligned bipolar LSIs Y. Tamaki, T. Shiba, Camilo Andres Avendano Caprilesez, T. Kure, K. Ohyu, Tohru Nakamura	2002	1
9	A new method for predicting distribution of DRAM retention time Yuki Mori, R. Yamada, Shiro Kamohara, Masahiro Moniwa, K. Ohyu, Jiale Peng	2002	12
10	Design and performance of 0.1- mu m CMOS devices using low-impurity-channel transistors (LICT's) IEEE Electron Device Letters ·Masakazu Aoki, Tatsuya Ishii, Teizo Yoshimura, Y. Kiyota, Kh. Kh. Yakubov, Toshiaki Yamanaka, T. Kure, K. Ohyu, Takashi Nishida, Shinji Okazaki, Kazuhiko Seki, K. Shimohigashi	1992	33
11	Advanced process device technology for 0.3- mu m high-performance bipolar LSIs IEEE Transactions on Electron Devices ·Y. Tamaki, T. Shiba, T. Kure, K. Ohyu, Tohru Nakamura	1992	8
12	Local Zener Phenomenon--A Mechanism of p-n Junction Leakage Current-- K. Ohyu, Atsushi Hiraiwa	1992	4
13	MeV-ion-induced damage in Si and its annealing Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·M. Tamura, Toshio Ando, K. Ohyu	1991	80
14	Radiation effects on fluorinated field oxides and associated devices IEEE Transactions on Nuclear Science ·Yasushiro Nishioka, Ivana Tomaz Parreira Silva, K. Ohyu, Masataka Kato, Tianxing Ma	1990	14
15	Highly Reliable Thin Silicon Dioxide Layers Grown on Heavily Phosphorus Doped Poly‐Si by Rapid Thermal Oxidation Journal of The Electrochemical Society ·K. Ohyu, 哲郎荒牧, O. Suchlandt, N. Natsuaki	1990	12
16	Hot-electron hardened Si-gate MOSFET utilizing F implantation IEEE Electron Device Letters ·Yasushiro Nishioka, K. Ohyu, Yuzuru Ohji, Coleen McCracken, K. Mukai, T.P. Ma	1989	83
17	The effect of fluorine implantation on the interface radiation hardness of Si-gate metal-oxide-semiconductor transistors Journal of Applied Physics ·Yasushiro Nishioka, K. Ohyu, Yuzuru Ohji, N. Natsuaki, Kiichiro Mukai, T. P.	1989	21
18	Comparison of TiSi2 and WSI2 Silicided Shallow Junctions for Sub-Micron CMOSs Symposium on VLSI Technology ·Nobuyoshi Kobayashi, N. Hashimoto, K. Ohyu, T. Kaga, Seiichi Iwata	1986	2
19	Electrical Activation and Deep Diffusion of Ion-Implanted Al and Ga in Si Japanese Journal of Applied Physics ·M. Tamura, K. Ohyu, K. Yagi, N. Natsuaki	1983	4
20	Spatial dose uniformity monitor for electrically scanned ion beam Review of Scientific Instruments ·N. Natsuaki, K. Ohyu, T. Tokuyama	1978	9

About K. Ohyu

K. Ohyu is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Bioengineering, Industrial and Manufacturing Engineering and Computational Mechanics, having authored 36 papers that have together received 601 indexed citations. Recurring topics across this work include Semiconductor materials and devices (24 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers), Integrated Circuits and Semiconductor Failure Analysis (19 papers), Silicon and Solar Cell Technologies (11 papers), Semiconductor materials and interfaces (7 papers), Thin-Film Transistor Technologies (4 papers), Ferroelectric and Negative Capacitance Devices (3 papers) and Silicon Carbide Semiconductor Technologies (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (562 citations), Computational Mechanics (112 citations), Hardware and Architecture (28 citations), Atomic and Molecular Physics, and Optics (108 citations) and Materials Chemistry (81 citations). K. Ohyu has collaborated with scholars based in Japan, United States and United Kingdom. Frequent co-authors include Yasushiro Nishioka, N. Natsuaki, M. Tamura, Yuzuru Ohji, Toshio Ando, Yuki Mori, R. Yamada, K. Mukai, T.P. Ma and Tianxing Ma. Their work appears in journals such as Japanese Journal of Applied Physics, IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Physics Letters and Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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