T. Miyajima
About
In The Last Decade
T. Miyajima
41 papers receiving 1.3k citations
Peers
Comparison fields: 5 of 49
- Atomic and Molecular Physics, and Optics 702
- Materials Chemistry 659
- Electrical and Electronic Engineering 642
- Condensed Matter Physics 610
- Electronic, Optical and Magnetic Materials 406
Countries citing papers authored by T. Miyajima
This map shows the geographic impact of T. Miyajima's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Miyajima with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Miyajima more than expected).
Fields of papers citing papers by T. Miyajima
This network shows the impact of papers produced by T. Miyajima. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Miyajima. The network helps show where T. Miyajima may publish in the future.
Co-authorship network of co-authors of T. Miyajima
This figure shows the co-authorship network connecting the top 25 collaborators of T. Miyajima. A scholar is included among the top collaborators of T. Miyajima based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Miyajima. T. Miyajima is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Title | Journal | Authors | Indexed citations |
|---|---|---|---|---|
| 1 | Tensile strain‐induced formation of micro‐cracks for AlGaN/GaN heterostructures | Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics | Junji Kotani, T. Miyajima et al. | 8 |
| 2 | Low temperature Cu-Cu direct bonding for 3D-IC by using fine crystal layer | T. Miyajima et al. | 15 | |
| 3 | Magnetic Tunnel Junctions with Low Resistance-area Product of 0.5 Ωμm2 | Journal of the Magnetics Society of Japan | Y. Uehara, Atsushi Furuya et al. | 11 |
| 4 | Polarized neutron reflectivity study of a thermally treated MnIr/CoFe exchange bias system | Journal of Physics Condensed Matter | N. Awaji, T. Miyajima et al. | 4 |
| 5 | Lower-temperature crystallization of CoFeB in MgO magnetic tunnel junctions by using Ti capping layer | Applied Physics Letters | T. Miyajima et al. | 33 |
| 6 | Fabrication of InN/InGaN multiple quantum well structures by RF‐MBE | Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics | M. Kurouchi, H. Naoi et al. | 2 |
| 7 | Growth and properties of InN, InGaN, and InN/InGaN quantum wells | physica status solidi (a) | H. Naoi, M. Kurouchi et al. | 11 |
| 8 | Structure analysis of ELO‐GaN using a 2 × 4 μm2 micro‐beam X‐ray of an 8‐GeV storage ring | physica status solidi (b) | T. Miyajima, M. Takeya et al. | 9 |
| 9 | Structure Analysis of InN Film Using Extended X-Ray Absorption Fine Structure Method | physica status solidi (b) | T. Miyajima, Yuki Kudo et al. | 28 |
| 10 | High-efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHz Japanese digital cordless phone | Shinji Hara, H. Sato et al. | 4 | |
| 11 | Local Structure Analysis of Ga 1—x In x N Alloy Using Extended X‐Ray Absorption Fine Structure Measurements | physica status solidi (b) | T. Miyajima, Yuki Kudo et al. | 8 |
| 12 | Estimation of Device Properties in AlGaInN-Based Laser Diodes by Time-Resolved Photoluminescence | physica status solidi (a) | T. Hino, T. Asano et al. | 11 |
| 13 | <title>GaN-based violet-blue laser diodes</title> | Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE | Shigeki Hashimoto, Hiroshi Nakajima et al. | 0 |
| 14 | Characterization of threading dislocations in GaN epitaxial layers | Applied Physics Letters | T. Hino, Shigetaka Tomiya et al. | 354 |
| 15 | Thermal deterioration mechanism of CoFeB/PdPtMn spin valves | Journal of Applied Physics | Ken‐ichi Aoshima, H. Kanai et al. | 7 |
| 16 | Unstable behavior of Ga atoms in ZnSe epitaxial layers | Journal of Applied Physics | Hino Takafumi, T. Haga et al. | 2 |
| 17 | Low-temperature synthesis of binary cuprates from hydroxide precursor | Journal of Low Temperature Physics | Masatsune Kato, T. Miyajima et al. | 4 |
| 18 | Room temperature pulsed operation of 498 nm laser with ZnMgSSe cladding layers | Electronics Letters | Satoshi Itoh, Hiroyuki Okuyama et al. | 39 |
| 19 | Origin of Carrier Reduction by Annealing in n-Type ZnSe | Materials science forum | T. Miyajima, Hideo Okuyama et al. | 2 |
| 20 | Summary Abstract: Fabrication of ultrathin heterostructures with van der Waals epitaxy | Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena | A. Koma, K. Sunouchi et al. | 195 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.