Taisuke Iwai

968 total citations
50 papers, 717 citations indexed

About

Taisuke Iwai is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Taisuke Iwai has authored 50 papers receiving a total of 717 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Taisuke Iwai's work include Radio Frequency Integrated Circuit Design (28 papers), Carbon Nanotubes in Composites (15 papers) and Advanced Power Amplifier Design (12 papers). Taisuke Iwai is often cited by papers focused on Radio Frequency Integrated Circuit Design (28 papers), Carbon Nanotubes in Composites (15 papers) and Advanced Power Amplifier Design (12 papers). Taisuke Iwai collaborates with scholars based in Japan and China. Taisuke Iwai's co-authors include Yuji Awano, Daiyu Kondo, K. Joshin, Hiroki Shioya, Yoichi Kawano, Shintaro Sato, Toshio Fujii, Akio Kawabata, Toshihide Suzuki and Kenichi Okada and has published in prestigious journals such as IEEE Transactions on Microwave Theory and Techniques, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

In The Last Decade

Taisuke Iwai

48 papers receiving 682 citations

Peers

Taisuke Iwai
M. Oszwałdowski Poland
B. Marcilhac France
S. Nuttinck United States
E. Kume Japan
Yue Xu China
R. Danneau Germany
D. Schmitz Germany
Aaron A. Pesetski United States
Zhou Lu China
Yu. V. Nastaushev Russia
M. Oszwałdowski Poland
Taisuke Iwai
Citations per year, relative to Taisuke Iwai Taisuke Iwai (= 1×) peers M. Oszwałdowski

Countries citing papers authored by Taisuke Iwai

Since Specialization
Citations

This map shows the geographic impact of Taisuke Iwai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Taisuke Iwai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Taisuke Iwai more than expected).

Fields of papers citing papers by Taisuke Iwai

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Taisuke Iwai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Taisuke Iwai. The network helps show where Taisuke Iwai may publish in the future.

Co-authorship network of co-authors of Taisuke Iwai

This figure shows the co-authorship network connecting the top 25 collaborators of Taisuke Iwai. A scholar is included among the top collaborators of Taisuke Iwai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Taisuke Iwai. Taisuke Iwai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tokgöz, Korkut Kaan, Taisuke Iwai, Kenichi Okada, et al.. (2018). A 120Gb/s 16QAM CMOS millimeter-wave wireless transceiver. 168–170. 110 indexed citations
2.
Sato, Masaru, Toshihide Suzuki, Yasuhiro Nakasha, et al.. (2017). Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers. IEICE Transactions on Electronics. E100.C(5). 417–423. 3 indexed citations
3.
Matsumura, Hiroshi, et al.. (2016). Millimeter-wave linear fast-chirp pulse generator in 65-nm CMOS technology. 321–324. 2 indexed citations
4.
Fujino, Masahisa, et al.. (2015). Fast atom bombardment onto vertically aligned multi-walled carbon nanotube bumps to achieve low interconnect resistance with Au layer. Microelectronics Reliability. 55(12). 2560–2564. 2 indexed citations
5.
Nakasha, Yasuhiro, Masaru Sato, Yoichi Kawano, et al.. (2014). InP HEMT amplifier design and packaging techniques for multi-10-Gbps data reception in sub-millimeter-wave bands. Asia-Pacific Microwave Conference. 1130–1132. 3 indexed citations
6.
Fujino, Masahisa, et al.. (2012). Electrical properties of flexible Vertically aligned Carbon Nanotube bumps under compression. 1–4. 1 indexed citations
7.
Kondo, Daiyu, et al.. (2008). Carbon nanotube bumps for LSI interconnect. 1390–1394. 29 indexed citations
8.
Iwai, Taisuke & Yuji Awano. (2007). Carbon nanotube bumps for thermal and electric conduction in transistor. 43(4). 508–515. 7 indexed citations
9.
Kanamura, Masahito, et al.. (2006). High Power AlGaN/GaN MIS-HEMT. IEICE Technical Report; IEICE Tech. Rep.. 105(521). 51–55. 1 indexed citations
10.
Kanamura, Masahito, T. Kikkawa, Taisuke Iwai, et al.. (2006). An over 100 W n-GaN/n-AlGaN/GaN MIS-HEMT power amplifier for wireless base station applications. 572–575. 25 indexed citations
11.
Sato, Shintaro, Misato Nihei, Atsushi Mimura, et al.. (2006). Novel approach to fabricating carbon nanotube via interconnects using size-controlled catalyst nanoparticles. 54 indexed citations
12.
Nihei, Misato, Daiyu Kondo, Akio Kawabata, et al.. (2005). Low-resistance multi-walled carbon nanotube vias with parallel channel conduction of inner shells [IC interconnect applications]. 234–236. 34 indexed citations
13.
Nihei, Mizuhisa, Daiyu Kondo, Akio Kawabata, et al.. (2005). Low-resistance multi-walled carbon nanotube vias with parallel channel conduction of inner shells. 234–236. 54 indexed citations
14.
Shiraishi, Masashi, Taishi Takenobu, Yoshihiro Iwasa, et al.. (2005). Solution‐Processed Fabrication of Single‐Walled Carbon Nanotube Field Effect Transistors. Fullerenes Nanotubes and Carbon Nanostructures. 13(sup1). 485–489. 2 indexed citations
15.
16.
Iwai, Taisuke, et al.. (2000). 42% high-efficiency two-stage HBT power-amplifier MMIC for W-CDMA cellular phone systems. IEEE Transactions on Microwave Theory and Techniques. 48(12). 2567–2572. 19 indexed citations
17.
18.
Iwai, Taisuke, et al.. (1998). High efficiency and high linearity InGaP/GaAs HBT power amplifiers: matching techniques of source and load impedance to improve phase distortion and linearity. IEEE Transactions on Electron Devices. 45(6). 1196–1200. 20 indexed citations
19.
Iwai, Taisuke, et al.. (1997). 1.5 V Low-Voltage Microwave Power Performance of InAlAs/InGaAs Double Heterojunction Bipolar Transistors. Japanese Journal of Applied Physics. 36(2R). 648–648. 37 indexed citations
20.
Shigematsu, H., et al.. (1995). Ultrahigh f/sub T/ and f/sub max/ new self-alignment InP/InGaAs HBT's with a highly Be-doped base layer grown by ALE/MOCVD. IEEE Electron Device Letters. 16(2). 55–57. 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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