Toshihiro Ohki

1.8k total citations
96 papers, 1.4k citations indexed

About

Toshihiro Ohki is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Toshihiro Ohki has authored 96 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 83 papers in Electrical and Electronic Engineering, 76 papers in Condensed Matter Physics and 30 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Toshihiro Ohki's work include GaN-based semiconductor devices and materials (76 papers), Radio Frequency Integrated Circuit Design (50 papers) and Ga2O3 and related materials (27 papers). Toshihiro Ohki is often cited by papers focused on GaN-based semiconductor devices and materials (76 papers), Radio Frequency Integrated Circuit Design (50 papers) and Ga2O3 and related materials (27 papers). Toshihiro Ohki collaborates with scholars based in Japan, China and France. Toshihiro Ohki's co-authors include Naoki Hara, Kozo Makiyama, T. Kikkawa, Kenji Imanishi, Masahito Kanamura, Naoya Okamoto, K. Joshin, Atsushi Yamada, Shiro Ozaki and Masaru Sato and has published in prestigious journals such as SHILAP Revista de lepidopterología, IEEE Transactions on Microwave Theory and Techniques and IEEE Transactions on Electron Devices.

In The Last Decade

Toshihiro Ohki

89 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Toshihiro Ohki Japan 20 1.2k 1.1k 463 280 222 96 1.4k
K. Joshin Japan 24 1.6k 1.4× 1.0k 0.9× 305 0.7× 503 1.8× 197 0.9× 94 1.8k
T. Kikkawa Japan 22 1.3k 1.1× 1.3k 1.2× 498 1.1× 334 1.2× 258 1.2× 80 1.6k
Kozo Makiyama Japan 21 1.2k 1.0× 722 0.7× 236 0.5× 370 1.3× 143 0.6× 96 1.4k
Yasuo Ohno Japan 17 832 0.7× 706 0.6× 240 0.5× 262 0.9× 179 0.8× 90 1.0k
Peter Brückner Germany 24 1.4k 1.1× 1.6k 1.4× 432 0.9× 597 2.1× 370 1.7× 122 2.0k
J.A. Roussos United States 18 974 0.8× 1.1k 1.0× 498 1.1× 290 1.0× 320 1.4× 49 1.3k
P. Saunier United States 24 1.6k 1.3× 1.5k 1.4× 556 1.2× 529 1.9× 210 0.9× 92 1.9k
W.L. Pribble United States 13 1.3k 1.1× 1.3k 1.2× 344 0.7× 334 1.2× 242 1.1× 21 1.6k
Lin‐An Yang China 17 634 0.5× 648 0.6× 270 0.6× 293 1.0× 179 0.8× 114 971
E. Morvan France 18 1.2k 1.0× 929 0.8× 280 0.6× 390 1.4× 201 0.9× 101 1.4k

Countries citing papers authored by Toshihiro Ohki

Since Specialization
Citations

This map shows the geographic impact of Toshihiro Ohki's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Toshihiro Ohki with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Toshihiro Ohki more than expected).

Fields of papers citing papers by Toshihiro Ohki

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Toshihiro Ohki. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Toshihiro Ohki. The network helps show where Toshihiro Ohki may publish in the future.

Co-authorship network of co-authors of Toshihiro Ohki

This figure shows the co-authorship network connecting the top 25 collaborators of Toshihiro Ohki. A scholar is included among the top collaborators of Toshihiro Ohki based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Toshihiro Ohki. Toshihiro Ohki is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Nakasha, Yasuhiro, Shiro Ozaki, Naoya Okamoto, et al.. (2025). A 9.3% PAE, 9.2-dBm <i>P</i><sub>OUT</sub> power amplifier and -1.9-dB <i>G</i><sub>c</sub> upconverting mixer using InP-based MOS HEMTs for 300-GHz phased-array transmitters. IEICE Electronics Express. 22(5). 20240699–20240699.
2.
3.
Nakasha, Yasuhiro, et al.. (2025). 37.1-dBm W-Band Power Amplifier Module Using GaN-Based HEMTs Stabilized With Resistive Back Metal for Broadband Wireless Applications. IEEE Microwave and Wireless Technology Letters. 35(3). 358–361.
4.
Ohki, Toshihiro, et al.. (2025). Record Negative Photoconductivity in N‐Polar AlGaN/GaN Quantum‐Well Heterostructures. Advanced Photonics Research. 6(12).
5.
Ozaki, Shiro, et al.. (2024). High Output Power and Efficiency 300-GHz Band InP-Based MOS-HEMT Power Amplifiers With Composite-Channel and Double-Side Doping. IEEE Journal of the Electron Devices Society. 12. 965–973. 1 indexed citations
6.
Ozaki, Shiro, et al.. (2023). High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors. IEICE Transactions on Electronics. E106.C(11). 661–668. 4 indexed citations
7.
Ozaki, Shiro, et al.. (2022). Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs. IEEE Transactions on Electron Devices. 69(6). 3073–3078. 8 indexed citations
8.
Okamoto, Naoya, et al.. (2021). Thermal Design of GaN-on-GaN HEMT Power Amplifier for a Selective Heating Microwave Oven. IEEE Transactions on Components Packaging and Manufacturing Technology. 11(11). 1909–1916. 6 indexed citations
9.
Okamoto, Naoya, Atsushi Takahashi, Yuichi Minoura, et al.. (2020). Deep GaN through-substrate via etching using Cl2/BCl3 inductively coupled plasma. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 38(6). 4 indexed citations
10.
Ozaki, Shiro, Kozo Makiyama, Toshihiro Ohki, et al.. (2020). Improved DC performance and current stability of ultrathin-Al 2 O 3 /InAlN/GaN MOS-HEMTs with post-metallization-annealing process. Semiconductor Science and Technology. 35(3). 35027–35027. 13 indexed citations
11.
Minoura, Yuichi, Toshihiro Ohki, Atsushi Yamada, et al.. (2019). Surface Activated Bonding of SiC/Diamond for Thermal Management of High-Output Power GaN HEMTs. 2 indexed citations
12.
Ohki, Toshihiro, Atsushi Yamada, Yuichi Minoura, et al.. (2018). An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader. IEEE Electron Device Letters. 40(2). 287–290. 68 indexed citations
13.
Ohki, Toshihiro, Shiro Ozaki, Kozo Makiyama, et al.. (2015). X-Ku wide-bandwidth GaN HEMT MMIC Amplifier with Small Deviation of Output Power and PAE. 114(391). 59–63. 1 indexed citations
14.
Ozaki, Shiro, Kozo Makiyama, Toshihiro Ohki, et al.. (2015). Surface‐oxide‐controlled InAlN/GaN MOS‐HEMTs with water vapor. physica status solidi (a). 213(5). 1259–1262. 9 indexed citations
15.
Ozaki, Shiro, Kozo Makiyama, Toshihiro Ohki, et al.. (2014). Reduction in current collapse of AlGaN/GaN HEMTs using methyl silsesquioxane‐based low‐k insulator films. physica status solidi (a). 212(5). 1153–1157. 5 indexed citations
16.
Joshin, K., et al.. (2014). Millimeter-wave GaN HEMT model with V DS dependence of C DS for power amplifier applications. Asia-Pacific Microwave Conference. 582–584. 2 indexed citations
17.
Masuda, S., Masao Yamada, Toshihiro Ohki, et al.. (2012). GaN single-chip transceiver frontend MMIC for X-band applications. 1–3. 46 indexed citations
18.
Nakasha, Yasuhiro, Masaru Sato, Toshihiro Ohki, et al.. (2009). An 85 GHz Distributed Amplifier with 15.5 dBm Output Saturated Power Using 0.1 µm InP-based High Electron Mobility Transistors. Japanese Journal of Applied Physics. 48(4S). 04C088–04C088. 1 indexed citations
19.
Kikkawa, T., Kozo Makiyama, Toshihiro Ohki, et al.. (2009). High performance and high reliability AlGaN/GaN HEMTs. physica status solidi (a). 206(6). 1135–1144. 90 indexed citations
20.
Ohki, Toshihiro, et al.. (2008). Development of High-Efficiency GaN-HEMT Amplifier for Mobile WiMAX. 44(3). 333–339. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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