Kozo Makiyama

1.7k total citations
96 papers, 1.4k citations indexed

About

Kozo Makiyama is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Kozo Makiyama has authored 96 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 90 papers in Electrical and Electronic Engineering, 49 papers in Condensed Matter Physics and 27 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Kozo Makiyama's work include Radio Frequency Integrated Circuit Design (61 papers), GaN-based semiconductor devices and materials (49 papers) and Semiconductor materials and devices (25 papers). Kozo Makiyama is often cited by papers focused on Radio Frequency Integrated Circuit Design (61 papers), GaN-based semiconductor devices and materials (49 papers) and Semiconductor materials and devices (25 papers). Kozo Makiyama collaborates with scholars based in Japan, United States and France. Kozo Makiyama's co-authors include Toshihiro Ohki, Naoki Hara, Naoya Okamoto, K. Joshin, Kenji Imanishi, T. Kikkawa, Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha and Masahito Kanamura and has published in prestigious journals such as Applied Physics Letters, IEEE Journal of Solid-State Circuits and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

Kozo Makiyama

95 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Kozo Makiyama Japan 21 1.2k 722 370 236 143 96 1.4k
Yasuo Ohno Japan 17 832 0.7× 706 1.0× 262 0.7× 240 1.0× 179 1.3× 90 1.0k
K. Joshin Japan 24 1.6k 1.3× 1.0k 1.4× 503 1.4× 305 1.3× 197 1.4× 94 1.8k
Toshihiro Ohki Japan 20 1.2k 1.0× 1.1k 1.5× 280 0.8× 463 2.0× 222 1.6× 96 1.4k
B. Hughes United States 22 1.5k 1.3× 845 1.2× 356 1.0× 318 1.3× 135 0.9× 58 1.7k
Lin‐An Yang China 17 634 0.5× 648 0.9× 293 0.8× 270 1.1× 179 1.3× 114 971
P. Hashimoto United States 25 1.4k 1.1× 1.4k 2.0× 418 1.1× 472 2.0× 155 1.1× 44 1.6k
Adele Schmitz United States 9 693 0.6× 632 0.9× 354 1.0× 288 1.2× 173 1.2× 14 968
A. Kurdoghlian United States 20 1.1k 0.9× 878 1.2× 368 1.0× 201 0.9× 67 0.5× 44 1.2k
T. Kikkawa Japan 22 1.3k 1.1× 1.3k 1.8× 334 0.9× 498 2.1× 258 1.8× 80 1.6k
C. Monier United States 18 781 0.7× 427 0.6× 504 1.4× 202 0.9× 191 1.3× 71 986

Countries citing papers authored by Kozo Makiyama

Since Specialization
Citations

This map shows the geographic impact of Kozo Makiyama's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kozo Makiyama with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kozo Makiyama more than expected).

Fields of papers citing papers by Kozo Makiyama

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kozo Makiyama. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kozo Makiyama. The network helps show where Kozo Makiyama may publish in the future.

Co-authorship network of co-authors of Kozo Makiyama

This figure shows the co-authorship network connecting the top 25 collaborators of Kozo Makiyama. A scholar is included among the top collaborators of Kozo Makiyama based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kozo Makiyama. Kozo Makiyama is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Makiyama, Kozo, et al.. (2025). Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures. Applied Physics Letters. 126(5). 3 indexed citations
3.
Kubota, K., Takehito Seki, S. Tōyama, et al.. (2025). Enhanced transport properties in GaN heterostructures with sputter-epitaxy-grown ScAlN barriers via thermal annealing. Applied Physics Letters. 127(18).
4.
Miyamoto, Yasuyuki & Kozo Makiyama. (2023). Electric Field Modulation in the Channel by Lateral Thickness Distribution of High-k Films Formed on GaN HEMTs to Improve Breakdown Voltage. IEEE Transactions on Electron Devices. 70(5). 2210–2215. 4 indexed citations
5.
Makiyama, Kozo, et al.. (2022). Challenges and Potential of N-polar GaN HEMT for beyond 5G Wireless Network. 104–107. 1 indexed citations
6.
Ozaki, Shiro, Kozo Makiyama, Toshihiro Ohki, et al.. (2020). Improved DC performance and current stability of ultrathin-Al 2 O 3 /InAlN/GaN MOS-HEMTs with post-metallization-annealing process. Semiconductor Science and Technology. 35(3). 35027–35027. 13 indexed citations
7.
Ohki, Toshihiro, Atsushi Yamada, Yuichi Minoura, et al.. (2018). An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader. IEEE Electron Device Letters. 40(2). 287–290. 68 indexed citations
8.
Ohki, Toshihiro, Shiro Ozaki, Kozo Makiyama, et al.. (2015). X-Ku wide-bandwidth GaN HEMT MMIC Amplifier with Small Deviation of Output Power and PAE. 114(391). 59–63. 1 indexed citations
9.
Ozaki, Shiro, Kozo Makiyama, Toshihiro Ohki, et al.. (2015). Surface‐oxide‐controlled InAlN/GaN MOS‐HEMTs with water vapor. physica status solidi (a). 213(5). 1259–1262. 9 indexed citations
10.
Ozaki, Shiro, Kozo Makiyama, Toshihiro Ohki, et al.. (2014). Reduction in current collapse of AlGaN/GaN HEMTs using methyl silsesquioxane‐based low‐k insulator films. physica status solidi (a). 212(5). 1153–1157. 5 indexed citations
11.
Nakasha, Yasuhiro, Masaru Sato, Yoichi Kawano, et al.. (2014). InP HEMT amplifier design and packaging techniques for multi-10-Gbps data reception in sub-millimeter-wave bands. Asia-Pacific Microwave Conference. 1130–1132. 3 indexed citations
12.
Joshin, K., et al.. (2014). Millimeter-wave GaN HEMT model with V DS dependence of C DS for power amplifier applications. Asia-Pacific Microwave Conference. 582–584. 2 indexed citations
13.
Masuda, S., Masao Yamada, Toshihiro Ohki, et al.. (2012). GaN single-chip transceiver frontend MMIC for X-band applications. 1–3. 46 indexed citations
14.
Takahashi, Tsuyoshi, Masaru Sato, Kozo Makiyama, et al.. (2011). Noise properties of asymmetrically recessed InP-based HEMTs for low-noise amplifiers. 1–4. 1 indexed citations
15.
Nakasha, Yasuhiro, Masaru Sato, Toshihiro Ohki, et al.. (2009). An 85 GHz Distributed Amplifier with 15.5 dBm Output Saturated Power Using 0.1 µm InP-based High Electron Mobility Transistors. Japanese Journal of Applied Physics. 48(4S). 04C088–04C088. 1 indexed citations
16.
Kikkawa, T., Kozo Makiyama, Toshihiro Ohki, et al.. (2009). High performance and high reliability AlGaN/GaN HEMTs. physica status solidi (a). 206(6). 1135–1144. 90 indexed citations
17.
Suzuki, T., Yukio Kawano, T. Takahashi, et al.. (2004). 13.2 Under 0.5W 50Gb/s Full-Rate 4:1MUX and 1:4 DEMUX in 0.13µm InP HEMT Technology. 104(175). 1–6. 4 indexed citations
18.
Suzuki, T., Yasuhiro Nakasha, Tsuyoshi Takahashi, et al.. (2004). 144-Gbit/s selector and 100-Gbit/s 4:1 multiplexer using InP HEMTs. 117–120. 25 indexed citations
19.
Suzuki, Toshihide, Yasuhiro Nakasha, H. Kano, et al.. (2003). Over 40-Gbit/s InP HEMT ICs for Optical Communication Systems. IEICE Transactions on Electronics. 86(10). 1916–1922. 1 indexed citations
20.
Takahashi, Tsuyoshi, Misato Nihei, Kozo Makiyama, et al.. (2002). Stable and uniform InAlAs/InGaAs HEMT ICs for 40-Gbit/s optical communication systems. 614–617. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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