M. Takikawa

1.0k total citations
52 papers, 819 citations indexed

About

M. Takikawa is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, M. Takikawa has authored 52 papers receiving a total of 819 indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 37 papers in Atomic and Molecular Physics, and Optics and 8 papers in Condensed Matter Physics. Recurrent topics in M. Takikawa's work include Semiconductor Quantum Structures and Devices (30 papers), Semiconductor materials and devices (27 papers) and Advancements in Semiconductor Devices and Circuit Design (13 papers). M. Takikawa is often cited by papers focused on Semiconductor Quantum Structures and Devices (30 papers), Semiconductor materials and devices (27 papers) and Advancements in Semiconductor Devices and Circuit Design (13 papers). M. Takikawa collaborates with scholars based in Japan, China and Germany. M. Takikawa's co-authors include J. Komeno, Itsuo Umebu, Osamu Ueda, Masashi Ozeki, K. Joshin, Masaru Takechi, Tsuyoshi Takahashi, T. Suzuki, Naoki Hara and Naoya Okamoto and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Solid-State Circuits.

In The Last Decade

M. Takikawa

51 papers receiving 772 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Takikawa Japan 17 655 514 226 150 79 52 819
M. Mannoh Japan 15 414 0.6× 381 0.7× 148 0.7× 114 0.8× 56 0.7× 42 532
Yoshihiro Kawarada Japan 9 634 1.0× 600 1.2× 189 0.8× 107 0.7× 31 0.4× 11 759
P. Delescluse France 15 450 0.7× 545 1.1× 142 0.6× 104 0.7× 27 0.3× 29 655
Toshiyuki Tanahashi Japan 15 391 0.6× 471 0.9× 343 1.5× 174 1.2× 113 1.4× 38 672
S. Koshiba Japan 12 388 0.6× 600 1.2× 167 0.7× 183 1.2× 37 0.5× 52 695
C.-L. Chen United States 5 516 0.8× 448 0.9× 103 0.5× 109 0.7× 21 0.3× 9 602
M. T. Emeny United Kingdom 16 564 0.9× 678 1.3× 91 0.4× 215 1.4× 37 0.5× 43 803
C. Daguet France 13 275 0.4× 289 0.6× 272 1.2× 63 0.4× 139 1.8× 20 558
Xue‐Lun Wang Japan 15 411 0.6× 541 1.1× 243 1.1× 222 1.5× 46 0.6× 68 730
P. Krispin Germany 12 585 0.9× 628 1.2× 299 1.3× 115 0.8× 28 0.4× 52 726

Countries citing papers authored by M. Takikawa

Since Specialization
Citations

This map shows the geographic impact of M. Takikawa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Takikawa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Takikawa more than expected).

Fields of papers citing papers by M. Takikawa

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Takikawa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Takikawa. The network helps show where M. Takikawa may publish in the future.

Co-authorship network of co-authors of M. Takikawa

This figure shows the co-authorship network connecting the top 25 collaborators of M. Takikawa. A scholar is included among the top collaborators of M. Takikawa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Takikawa. M. Takikawa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Suzuki, T., Yukio Kawano, Yasuhiro Nakasha, et al.. (2005). Design and InP HEMT Technology for ultra-high speed digital ICs with beyond 80-Gbit/s operation. 211–214. 1 indexed citations
2.
Hara, Naoki, Naoya Okamoto, Kenji Imanishi, et al.. (2005). Improvement in reliability of InP-based HEMTs by suppressfng impact ionization. 615–618. 8 indexed citations
3.
Suzuki, T., Yukio Kawano, T. Takahashi, et al.. (2004). 13.2 Under 0.5W 50Gb/s Full-Rate 4:1MUX and 1:4 DEMUX in 0.13µm InP HEMT Technology. 104(175). 1–6. 4 indexed citations
4.
Joshin, K., et al.. (2004). A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications. 12.6.1–12.6.3. 81 indexed citations
5.
Suzuki, T., Yasuhiro Nakasha, Tsuyoshi Takahashi, et al.. (2004). 144-Gbit/s selector and 100-Gbit/s 4:1 multiplexer using InP HEMTs. 117–120. 25 indexed citations
6.
Kawai, Tomoko, Iwao Okamoto, Masaki Suzuki, et al.. (2002). An E-mode GaAs FET power amplifier MMIC for GSM phones. 3. 1315–1318. 12 indexed citations
7.
Okamoto, Naoya, Tsuyoshi Takahashi, Hitoshi Tanaka, & M. Takikawa. (1998). Near-Ohmic Contact of n-GaAs with GaS/GaAs Quasi-Metal-Insulator-Semiconductor Structure. Japanese Journal of Applied Physics. 37(6R). 3248–3248. 13 indexed citations
8.
Hara, Naoki, et al.. (1997). Enhancement of Mg activation in AlGaAs by Mg+Ar and Mg+P dual ion implantation. Journal of Applied Physics. 81(11). 7367–7371. 2 indexed citations
9.
Watanabe, Y., Yasuhiro Nakasha, Kenji Imanishi, & M. Takikawa. (1995). Monolithic Integration of Resonant Tunneling Diode and HEMT for Low-Voltage, Low-Power Digital Circuits. IEICE Transactions on Electronics. 78(4). 368–373. 2 indexed citations
10.
Tanaka, Hitoshi, et al.. (1995). Effect of the AlAs surface reconstruction on properties of Ge grown on AlAs. Journal of Crystal Growth. 150. 649–653. 2 indexed citations
11.
Asai, Satoru, et al.. (1993). Resolution Limit for Optical Lithography Using Polarized Light Illumination. Japanese Journal of Applied Physics. 32(12S). 5863–5863. 8 indexed citations
12.
Takikawa, M. & K. Joshin. (1993). Pseudomorphic n-InGaP/InGaAs/GaAs high electron mobility transistors for low-noise amplifiers. IEEE Electron Device Letters. 14(8). 406–408. 42 indexed citations
13.
Kuroda, S., et al.. (1992). InGaP/InGaAs/GaAs Pseudomorphic HEMT DCFL Circuits on Si Substrates. 3 indexed citations
14.
Kikkawa, T., et al.. (1990). Growth temperature dependence of EL2 concentration in GaAs grown by metalorganic vapor-phase epitaxy using tertiarybutylarsine. Journal of Applied Physics. 68(8). 4064–4067. 3 indexed citations
15.
Ueda, Osamu, M. Takikawa, J. Komeno, & Itsuo Umebu. (1987). Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics. 26(11A). L1824–L1824. 101 indexed citations
16.
Takikawa, M., J. Komeno, & M. Ozeki. (1983). Two-dimensional electron gas in a selectively doped InP/In0.53 Ga0.47As heterostructure grown by chloride transport vapor phase epitaxy. Applied Physics Letters. 43(3). 280–282. 20 indexed citations
17.
Komeno, J., M. Takikawa, & Masashi Ozeki. (1983). TDEG in In 0.53 Ga 0.47 As-InP heterojunction grown by chloride VPE. Electronics Letters. 19(13). 473–474. 23 indexed citations
18.
Ozeki, Masashi, K. Kodama, M. Takikawa, & A. Shibatomi. (1982). Analysis of electrical and optical properties of insulating film–GaAs interfaces using MESFET-type structures. Journal of Vacuum Science and Technology. 21(2). 438–441. 26 indexed citations
19.
Ikoma, Toshiaki & M. Takikawa. (1981). Origin of the Ev+0.51 eV Level in GaAs. Japanese Journal of Applied Physics. 20(8). L591–L591. 4 indexed citations
20.
Takikawa, M. & Toshiaki Ikoma. (1980). Photo-Excited DLTS: Measurement of Minority Carrier Traps. Japanese Journal of Applied Physics. 19(7). L436–L436. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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