Michael Iza

2.3k total citations
58 papers, 1.9k citations indexed

About

Michael Iza is a scholar working on Condensed Matter Physics, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Michael Iza has authored 58 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 58 papers in Condensed Matter Physics, 28 papers in Materials Chemistry and 23 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Michael Iza's work include GaN-based semiconductor devices and materials (58 papers), ZnO doping and properties (27 papers) and Ga2O3 and related materials (22 papers). Michael Iza is often cited by papers focused on GaN-based semiconductor devices and materials (58 papers), ZnO doping and properties (27 papers) and Ga2O3 and related materials (22 papers). Michael Iza collaborates with scholars based in United States, Saudi Arabia and France. Michael Iza's co-authors include Steven P. DenBaars, Shuji Nakamura, James S. Speck, Umesh K. Mishra, Carl J. Neufeld, Samantha C. Cruz, S. Keller, Nikholas G. Toledo, Robert M. Farrell and Kenneth J. Vampola and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Express.

In The Last Decade

Michael Iza

55 papers receiving 1.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Michael Iza United States 23 1.7k 759 741 711 606 58 1.9k
Kazuyuki Tadatomo Japan 19 1.8k 1.0× 641 0.8× 944 1.3× 819 1.2× 694 1.1× 122 2.0k
Tongjun Yu China 23 1.4k 0.8× 462 0.6× 938 1.3× 797 1.1× 613 1.0× 162 1.8k
Jeffrey J. Figiel United States 25 1.4k 0.8× 659 0.9× 729 1.0× 720 1.0× 820 1.4× 52 2.0k
Haiqiang Jia China 19 1.0k 0.6× 500 0.7× 791 1.1× 511 0.7× 645 1.1× 126 1.5k
E. Iliopoulos Greece 27 1.5k 0.9× 530 0.7× 819 1.1× 823 1.2× 622 1.0× 86 1.9k
H. M. Ng United States 20 1.3k 0.8× 675 0.9× 800 1.1× 738 1.0× 729 1.2× 47 1.8k
Ronald A. Arif United States 16 1.6k 0.9× 943 1.2× 730 1.0× 559 0.8× 550 0.9× 40 1.8k
Sergio Fernández‐Garrido Germany 28 2.1k 1.2× 450 0.6× 1.3k 1.8× 1.3k 1.8× 590 1.0× 80 2.4k
Zachary Bryan United States 29 2.0k 1.1× 373 0.5× 840 1.1× 1.2k 1.6× 827 1.4× 49 2.2k
Éric Frayssinet France 22 1.3k 0.7× 525 0.7× 619 0.8× 647 0.9× 778 1.3× 129 1.7k

Countries citing papers authored by Michael Iza

Since Specialization
Citations

This map shows the geographic impact of Michael Iza's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Michael Iza with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Michael Iza more than expected).

Fields of papers citing papers by Michael Iza

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Michael Iza. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Michael Iza. The network helps show where Michael Iza may publish in the future.

Co-authorship network of co-authors of Michael Iza

This figure shows the co-authorship network connecting the top 25 collaborators of Michael Iza. A scholar is included among the top collaborators of Michael Iza based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Michael Iza. Michael Iza is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Iza, Michael, Abdullah Alharbi, Shuji Nakamura, et al.. (2025). Structural and electrical properties of MOCVD-grown scandium nitride thin films on sapphire, Si, GaN, and SiC. Applied Physics Letters. 127(1).
2.
Yao, Yifan, et al.. (2025). III-nitride thin film liftoff using electrochemical etching. Applied Physics Letters. 127(10).
3.
Yao, Yifan, et al.. (2024). Demonstration of UV-A stimulated emission from optical pumping with a nano-porous cladding layer. Applied Physics Express. 17(12). 122001–122001. 1 indexed citations
4.
Yao, Yifan, Hongjian Li, Panpan Li, et al.. (2023). Size dependent characteristics of AlGaN-based ultraviolet micro-LEDs. 1–2.
5.
Lynsky, Cheyenne, Matthew S. Wong, Feng Wu, et al.. (2023). High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates. Optics Express. 31(25). 41351–41351. 14 indexed citations
6.
Yao, Yifan, Christian J. Zollner, Michael Iza, et al.. (2022). Polarization-Enhanced p-AlGaN Superlattice Optimization for GUV LED. IEEE Journal of Quantum Electronics. 58(4). 1–9. 13 indexed citations
7.
Zollner, Christian J., Michael Iza, Jianfeng Wang, et al.. (2021). Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration. AIP Advances. 11(9). 23 indexed citations
8.
Li, Hongjian, et al.. (2021). Limiting factors of GaN-on-GaN LED. Semiconductor Science and Technology. 36(9). 95035–95035. 5 indexed citations
9.
Zollner, Christian J., Yifan Yao, Feng Wu, et al.. (2021). Highly Conductive n-Al0.65Ga0.35N Grown by MOCVD Using Low V/III Ratio. Crystals. 11(8). 1006–1006. 21 indexed citations
10.
Zollner, Christian J., Bastien Bonef, Yifan Yao, et al.. (2021). High conductivity n-Al0.6Ga0.4N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters. Optics Express. 29(25). 40781–40781. 9 indexed citations
11.
Zainal, N., et al.. (2021). Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED. Microelectronics International. 38(3). 113–118. 1 indexed citations
12.
Zollner, Christian J., Yifan Yao, Michael Iza, et al.. (2020). Superlattice hole injection layers for UV LEDs grown on SiC. Optical Materials Express. 10(9). 2171–2171. 13 indexed citations
13.
Iza, Michael, Abdulrahman Albadri, Shuji Nakamura, et al.. (2018). Developments in AlGaN and UV-C LEDs grown on SiC. King Abdullah University of Science and Technology Repository (King Abdullah University of Science and Technology). 64–64. 8 indexed citations
14.
Wu, Feng, Christian J. Zollner, Michael Iza, et al.. (2017). Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers. Journal of Crystal Growth. 483. 134–139. 19 indexed citations
15.
Farrell, Robert M., Carl J. Neufeld, Michael Iza, et al.. (2013). Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells. Applied Physics Letters. 103(24). 10 indexed citations
16.
Das, Naresh C., Meredith Reed, Anand V. Sampath, et al.. (2012). Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting. 3076–3079. 1 indexed citations
17.
Neufeld, Carl J., Samantha C. Cruz, Robert M. Farrell, et al.. (2011). Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells. Applied Physics Letters. 99(7). 71104–71104. 25 indexed citations
18.
Farrell, Robert M., Daniel A. Haeger, Xiang Chen, et al.. (2010). Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes. Journal of Crystal Growth. 313(1). 1–7. 33 indexed citations
19.
Choi, Yong‐Seok, Michael Iza, Elison Matioli, et al.. (2007). 2.5 λ microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process. Applied Physics Letters. 91(6). 13 indexed citations
20.
Masui, Hisashi, Troy J. Baker, Michael Iza, et al.. (2006). Light-polarization characteristics of electroluminescence from InGaN∕GaN light-emitting diodes prepared on (112¯2)-plane GaN. Journal of Applied Physics. 100(11). 44 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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