Mike Iza

844 total citations · 1 hit paper
15 papers, 708 citations indexed

About

Mike Iza is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, Mike Iza has authored 15 papers receiving a total of 708 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Condensed Matter Physics, 8 papers in Atomic and Molecular Physics, and Optics and 8 papers in Electrical and Electronic Engineering. Recurrent topics in Mike Iza's work include GaN-based semiconductor devices and materials (15 papers), Semiconductor Quantum Structures and Devices (8 papers) and Metal and Thin Film Mechanics (6 papers). Mike Iza is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Semiconductor Quantum Structures and Devices (8 papers) and Metal and Thin Film Mechanics (6 papers). Mike Iza collaborates with scholars based in United States and China. Mike Iza's co-authors include Steven P. DenBaars, Shuji Nakamura, James S. Speck, Hongjian Li, Panpan Li, Haojun Zhang, Siddha Pimputkar, Umesh K. Mishra, Nathan Pfaff and Yuji Zhao and has published in prestigious journals such as Applied Physics Letters, Acta Materialia and Optics Express.

In The Last Decade

Mike Iza

15 papers receiving 682 citations

Hit Papers

Development of gallium-nitride-based light-emitting diode... 2013 2026 2017 2021 2013 100 200 300

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Mike Iza United States 12 585 299 274 226 213 15 708
J. Deng United States 12 523 0.9× 224 0.7× 191 0.7× 291 1.3× 131 0.6× 43 651
C. Durand France 8 434 0.7× 238 0.8× 370 1.4× 251 1.1× 124 0.6× 8 706
J. I. Hwang Japan 12 514 0.9× 188 0.6× 398 1.5× 327 1.4× 221 1.0× 23 686
Gabriele Penazzi Italy 9 335 0.6× 345 1.2× 378 1.4× 124 0.5× 312 1.5× 27 713
Asad J. Mughal United States 10 391 0.7× 269 0.9× 198 0.7× 136 0.6× 176 0.8× 18 523
Melvin McLaurin United States 15 586 1.0× 281 0.9× 314 1.1× 285 1.3× 163 0.8× 16 713
H. Bremers Germany 19 795 1.4× 342 1.1× 426 1.6× 425 1.9× 520 2.4× 76 1.1k
J. Baur Germany 15 773 1.3× 487 1.6× 553 2.0× 318 1.4× 384 1.8× 28 1.1k
Vitaly Z. Zubialevich Ireland 14 421 0.7× 192 0.6× 228 0.8× 251 1.1× 155 0.7× 70 552

Countries citing papers authored by Mike Iza

Since Specialization
Citations

This map shows the geographic impact of Mike Iza's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mike Iza with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mike Iza more than expected).

Fields of papers citing papers by Mike Iza

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mike Iza. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mike Iza. The network helps show where Mike Iza may publish in the future.

Co-authorship network of co-authors of Mike Iza

This figure shows the co-authorship network connecting the top 25 collaborators of Mike Iza. A scholar is included among the top collaborators of Mike Iza based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mike Iza. Mike Iza is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
Li, Panpan, Matthew S. Wong, Yifan Yao, et al.. (2024). Advances in InGaN-based RGB micro-light-emitting diodes for AR applications: Status and perspective. APL Materials. 12(8). 10 indexed citations
2.
Li, Panpan, Hongjian Li, Matthew S. Wong, et al.. (2023). InGaN amber micrometer-scale light-emitting diodes with a peak external quantum efficiency of 5.5%. Applied Physics Express. 16(6). 64002–64002. 11 indexed citations
3.
Li, Panpan, Hongjian Li, Yifan Yao, et al.. (2023). Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes. Optics Express. 31(5). 7572–7572. 8 indexed citations
4.
Li, Panpan, Hongjian Li, Yifan Yao, et al.. (2023). Significant Quantum Efficiency Enhancement of InGaN Red Micro-Light-Emitting Diodes with a Peak External Quantum Efficiency of up to 6%. ACS Photonics. 10(6). 1899–1905. 36 indexed citations
5.
Li, Panpan, Hongjian Li, Haojun Zhang, et al.. (2022). Demonstration of ultra-small 5 × 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2%. Applied Physics Letters. 120(4). 19 indexed citations
6.
Li, Panpan, Hongjian Li, Haojun Zhang, et al.. (2022). Red InGaN micro-light-emitting diodes (>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact. Applied Physics Letters. 120(12). 48 indexed citations
7.
Li, Panpan, Hongjian Li, Matthew S. Wong, et al.. (2022). Progress of InGaN-Based Red Micro-Light Emitting Diodes. Crystals. 12(4). 541–541. 27 indexed citations
8.
Li, Hongjian, Haojun Zhang, Mike Iza, et al.. (2021). Metalorganic chemical vapor deposition-grown tunnel junctions for low forward voltage InGaN light-emitting diodes: epitaxy optimization and light extraction simulation. Semiconductor Science and Technology. 36(3). 35019–35019. 9 indexed citations
9.
Li, Panpan, Hongjian Li, Yifan Yao, et al.. (2021). Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction control. Optics Express. 29(14). 22001–22001. 11 indexed citations
10.
Li, Panpan, Hongjian Li, Haojun Zhang, et al.. (2021). Size-independent peak external quantum efficiency (>2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm. Applied Physics Letters. 119(8). 61 indexed citations
11.
Li, Panpan, Aurélien David, Hongjian Li, et al.. (2021). High-temperature electroluminescence properties of InGaN red 40 × 40 μ m2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2%. Applied Physics Letters. 119(23). 35 indexed citations
12.
Li, Panpan, Haojun Zhang, Hongjian Li, et al.. (2020). Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage. Semiconductor Science and Technology. 35(12). 125023–125023. 26 indexed citations
13.
Li, Panpan, Haojun Zhang, Hongjian Li, et al.. (2020). Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition. Optics Express. 28(13). 18707–18707. 31 indexed citations
14.
DenBaars, Steven P., Daniel Feezell, Siddha Pimputkar, et al.. (2013). Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays. Acta Materialia. 61(3). 945–951. 361 indexed citations breakdown →
15.
Iza, Mike, et al.. (2006). Etching of Ga-face and N-face GaN by Inductively Coupled Plasma. Japanese Journal of Applied Physics. 45(2R). 720–720. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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