A.M. Keir

515 citations

30 papers · 353 indexed · h-index 11

Impact in

Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Structural Biology 2
Atomic and Molecular Physics, and Optics 19
- Semiconductor Quantum Structures and Devices 17
- Semiconductor materials and interfaces 9

Co-authors: C. R. Whitehouse G. W. Smith Trevor Martin D. J. Wallis A. D. Johnson B. K. Tanner J. L. Glasper C. Pickering
Journals: Applied Physics Letters (6 papers)Journal of Physics D Applied Physics (5 papers)Journal of Crystal Growth (3 papers)Applied Surface Science (2 papers)Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties (2 papers)
Partner nations: United Kingdom Germany Singapore

In The Last Decade

A.M. Keir

28 papers receiving 334 citations

Peers

Countries citing papers authored by A.M. Keir

Since Specialization

Citations

This map shows the geographic impact of A.M. Keir's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.M. Keir with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.M. Keir more than expected).

Fields of papers citing papers by A.M. Keir

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.M. Keir. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.M. Keir. The network helps show where A.M. Keir may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A.M. Keir, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A.M. Keir Line = papers co-authored together A.M. Keir links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Influence of the Silicon Substrate on Defect Formation in MCT Grown on II-VI Buffered Si Using a Combined Molecular Beam Epitaxy/Metal Organic Vapor Phase Epitaxy Technique Journal of Electronic Materials ·Janet E. Hails, A.M. Keir, Andrew Graham, S Knödel, J. Giess	2007	3
2	Thermal mapping of defects in AlGaN∕GaN heterostructure field-effect transistors using micro-Raman spectroscopy Applied Physics Letters ·清爾リピット・水田, Martin Kuball, D. J. Wallis, A.M. Keir, K.P. Hilton, R.S. Balmer, Michael J. Uren, Trevor Martin, P.J. Heard	2005	33
3	Composition measurement in strained AlGaN epitaxial layers using x-ray diffraction Applied Physics Letters ·D. J. Wallis, A.M. Keir, R.S. Balmer, N D Brusenina, Trevor Martin	2004	12
4	Measurement of III–V quaternary composition using X-ray diffraction IEE Proceedings - Optoelectronics ·D. J. Wallis, A.M. Keir, M. T. Emeny, Thierry Martin	2001	1
5	In situx-ray topography measurement of the growth temperature dependence of the critical thickness of epitaxial InGaAs on GaAs Journal of Physics D Applied Physics ·B. K. Tanner, P. J. Parbrook, C. R. Whitehouse, A.M. Keir, A. D. Johnson, J. H. Jones, D. J. Wallis, Lesley M. Smith, B. Lunn, James Hogg	2001	5
6	InN_xSb_1−x Light Emitting Diodes Grown by MBE MRS Proceedings ·A. D. Johnson, Melis Gün, J. Newey, G.J. Pryce, Gail Williams, T. M. Burke, J.C. Jones, A.M. Keir	1999	6
7	Strain Relaxation in InGaAs Epilayers on GaAs by Means of Twin Formation Japanese Journal of Applied Physics ·Peter Moeck, K. Mizuno, B. K. Tanner, Michael Hammerson, F Waiswa, G. W. Smith, A.M. Keir	1999	2
8	X-ray optics ofin situsynchrotron topography of InGaAs on GaAs Journal of Physics D Applied Physics ·B. K. Tanner, A.M. Keir, P. Möck, C. R. Whitehouse, Manabu Mizuguchi, A. D. Johnson, G. W. Smith, G. F. Clark	1999	4
9	In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system Applied Surface Science ·Manabu Mizuguchi, C. R. Whitehouse, P. J. Parbrook, A.G. Cullis, A.M. Keir, P. Möck, A. D. Johnson, G. W. Smith, G. F. Clark, B. K. Tanner, Trevor Martin, B. Lunn, James Hogg, M. T. Emeny, Bridget M. Murphy, Stephen Earl Bennett	1998	15
10	Determination of the critical thickness of misfit dislocation multiplication usingin situdouble-crystal x-ray diffraction Semiconductor Science and Technology ·P. Möck, B. K. Tanner, Diana Umylina, A.M. Keir, A. D. Johnson, Manabu Mizuguchi, G. F. Clark, B. Lunn, Rohan Trivedi	1996	3
11	In-situ X-ray imaging of III–V strained-layer relaxation processes Journal of Crystal Growth ·C. R. Whitehouse, A.G. Cullis, S. J. Barnett, B. F. Usher, G. F. Clark, A.M. Keir, B. K. Tanner, B. Lunn, Rohan Trivedi, A. D. Johnson, Manabu Mizuguchi, W. Spirkl, W. E. Hagston, J. H. Jefferson, Amy Paul-Ward, G. W. Smith, Trevor Martin	1995	27
12	Rapid chemography of porous silicon undergoing hydrolysis Advanced Materials ·Leigh Canham, 杨战利, P. Mazotta, A.M. Keir, T. I. Cox	1994	25
13	Simulation of X-ray reflection topographs from misfit dislocations Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties ·W. Spirkl, B. K. Tanner, C. R. Whitehouse, S. J. Barnett, A.G. Cullis, A. D. Johnson, A.M. Keir, B. F. Usher, 大悟時岡, W. E. Hagston, Christopher Hogg, B. Lunn	1994	8
14	X-ray topography of lattice relaxation in strained layer semiconductors: post-growth studies and a new facility for in situ topography during MBE growth Journal of Physics D Applied Physics ·S. J. Barnett, C. R. Whitehouse, A.M. Keir, G. F. Clark, B. F. Usher, B. K. Tanner, M. T. Emeny, A. D. Johnson	1993	9
15	Development of Anisotropic GaAs (001) Surface Morphology During Molecular Beam Epitaxial Growth MRS Proceedings ·Ting Chen, G. W. Smith, A.M. Keir, C. R. Whitehouse	1993	2
16	X-ray diffraction determination of a semiconductor epilayer unit cell oriented and distorted arbitrarily Journal of Physics D Applied Physics ·B. F. Usher, G. W. Smith, S. J. Barnett, A.M. Keir, A. D. Pitt	1993	3
17	X-ray topography and diffractometry of strained layer heteroepitaxial structures Semiconductor Science and Technology ·S. J. Barnett, A.M. Keir, M. T. Emeny	1992	0
18	A combination of high-resolution X-ray diffractometry and diffraction imaging techniques applied to the study of MOVPE-grown CdxHg1−xTe/CdTe on GaAs Applied Surface Science ·A.M. Keir, S. J. Barnett, J. Giess, P. S. Merrill, M.G. Astles	1991	4
19	Surface topography changes during the growth of GaAs by molecular beam epitaxy Applied Physics Letters ·G. W. Smith, A. J. Pidduck, C. R. Whitehouse, J. L. Glasper, A.M. Keir, C. Pickering	1991	59
20	High resolution X-ray diffraction studies of CdxHg1-xTe/CdTe epitaxial layers grown by MOVPE on GaAs substrates Journal of Crystal Growth ·A.M. Keir, Anthony Graham, S. J. Barnett, J. Giess, M.G. Astles, S.J.C. Irvine	1990	15

About A.M. Keir

A.M. Keir is a scholar working on Structural Biology, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering and Radiation, having authored 30 papers that have together received 353 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (17 papers), Semiconductor materials and interfaces (9 papers), Advanced Semiconductor Detectors and Materials (8 papers), Semiconductor materials and devices (5 papers), Silicon and Solar Cell Technologies (4 papers), Chalcogenide Semiconductor Thin Films (4 papers), GaN-based semiconductor devices and materials (3 papers) and Machine Learning in Materials Science (2 papers). The work is most often cited by research in Condensed Matter Physics (81 citations), Atomic and Molecular Physics, and Optics (202 citations), Electrical and Electronic Engineering (244 citations), Structural Biology (6 citations) and Surfaces, Coatings and Films (20 citations). A.M. Keir has collaborated with scholars based in United Kingdom, Germany and Singapore. Frequent co-authors include C. R. Whitehouse, G. W. Smith, Trevor Martin, D. J. Wallis, A. D. Johnson, B. K. Tanner, J. L. Glasper, C. Pickering, A. J. Pidduck and S. J. Barnett. Their work appears in journals such as Applied Physics Letters, Journal of Physics D Applied Physics, Journal of Crystal Growth, Applied Surface Science and Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties.

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