F. Ranalli

692 citations

20 papers · 309 indexed · h-index 11

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 19
- GaN-based semiconductor devices and materials 19
Electronic, Optical and Magnetic Materials 11
- Ga2O3 and related materials 11

Co-authors: P. J. Parbrook Jie Bai Qi Wang Ti Wang R. Airey A. G. Cullis G. Hill D. J. Wallis
Journals: Applied Physics Letters (7 papers)Journal of Applied Physics (5 papers)Journal of Physics D Applied Physics (2 papers)Journal of Crystal Growth (1 paper)Semiconductor Science and Technology (1 paper)
Partner nations: United Kingdom Italy Germany

In The Last Decade

F. Ranalli

19 papers receiving 298 citations

Peers

Countries citing papers authored by F. Ranalli

Since Specialization

Citations

This map shows the geographic impact of F. Ranalli's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Ranalli with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Ranalli more than expected).

Fields of papers citing papers by F. Ranalli

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Ranalli. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Ranalli. The network helps show where F. Ranalli may publish in the future.

Co-authorship network

The 25 scholars most cited alongside F. Ranalli, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with F. Ranalli Line = papers co-authored together F. Ranalli links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	The origin of the high ideality factor in AlGaN-based quantum well ultraviolet light emitting diodes physica status solidi (b) ·Teena Patel, P. J. Parbrook, Ti Wang, Jie Bai, F. Ranalli, R. Airey, G. Hill	2010	23
2	Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures Applied Physics Letters ·Gabriel Rodrigues Prado de Sousa, D. J. Mowbray, F. Ranalli, Şahap Nazmi Coşkunlar	2010	13
3	Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe Journal of Applied Physics ·Taylor Akers, I. J. Luxmoore, Timothy Dorsch, P. A. Houston, F. Ranalli, Tao Wang, P. J. Parbrook, Michael J. Uren, D. J. Wallis, T. Martin	2010	9
4	Influence of crystal quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots Applied Physics Letters ·Gabriel Rodrigues Prado de Sousa, D. J. Mowbray, Qi Wang, F. Ranalli, Ti Wang	2009	10
5	Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes Journal of Crystal Growth ·Mehmet Seçkin Kurubaş, P. J. Parbrook, Ti Wang, Jie Bai, F. Ranalli, R. Airey, G. Hill	2009	20
6	Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire Applied Physics Letters ·Qi Wang, Y. Gong, Jinfeng Zhang, Jie Bai, F. Ranalli, Tamaki Inaba	2009	14
7	Optical and microstructural studies of InGaN/GaN quantum dot ensembles Applied Physics Letters ·Gabriel Rodrigues Prado de Sousa, D. J. Mowbray, F. Ranalli, P. J. Parbrook, Qi Wang, Andy B. Yule, Kondo Asayo, Щеголев Павел Евгеньевич, Matthew P. Halsall, Reza J. Kashtiban, U. Bangert	2009	7
8	Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes Semiconductor Science and Technology ·I. M. Scharfbillig, I. J. Luxmoore, P.A. Houston, F. Ranalli, T. Kusomoto, P. J. Parbrook, Michael J. Uren, D. J. Wallis, T. Martin	2009	5
9	Influence of annealing temperature on optical properties of InGaN quantum dot based light emitting diodes Applied Physics Letters ·Qi Wang, Jess Rowley, Jie Bai, A. G. Cullis, P. J. Parbrook, F. Ranalli	2008	22
10	Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer Journal of Applied Physics ·Qi Wang, Ti Wang, Jie Bai, A. G. Cullis, P. J. Parbrook, F. Ranalli	2008	35
11	The 310–340 nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer Journal of Physics D Applied Physics ·A W Carrie, Veerabhadrappa Pallavi Sathvika, Jie Bai, P. J. Parbrook, F. Ranalli, Qi Wang, R. Airey, A. G. Cullis, Astrid von Büren Jarchow, D. Massoubre, Zheng Gong, I. M. Watson, Erdan Gu, Martin D. Dawson	2008	7
12	Temperature dependent behaviour of 340 nm light emitting diodes incorporating a gallium nitride interlayer Journal of Physics D Applied Physics ·R. Airey, Veerabhadrappa Pallavi Sathvika, P. J. Parbrook, Jie Bai, F. Ranalli, A W Carrie, G. Hill	2008	3
13	GaN hybrid microcavities in the strong coupling regime grown by metal-organic chemical vapor deposition on sapphire substrates Journal of Applied Physics ·Ahmed Y. Alyamani, D. Sanvitto, Chang Bh, M. S. Skolnick, Ti Wang, F. Ranalli, P. J. Parbrook, A. Tahraoui, R. Airey	2007	14
14	Optical investigation of exciton localization in AlxGa1−xN Journal of Applied Physics ·Teena Patel, P. J. Parbrook, Tao Wang, F. Ranalli, T. Martin, R.S. Balmer, D. J. Wallis	2007	33
15	Improved AlN buffer layer technologies for UV‐LEDs Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·F. Ranalli, P. J. Parbrook, Ti Wang, Jie Bai, Teena Patel, R. Airey, G. Hill, Abbès Tahraoui, A. G. Cullis	2007	0
16	Greatly improved performance of 340nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer Applied Physics Letters ·IPH. PHOCAS, Edward Donald Kennedy, Jie Bai, P. J. Parbrook, R. Airey, Qi Wang, G. Hill, F. Ranalli, A. G. Cullis	2006	29
17	Fabrication and optical investigation of a high-density GaN nanowire array Applied Physics Letters ·Qiuping Wang, F. Ranalli, P. J. Parbrook, R. Airey, Sirinrat Chalom, 卓三高菅, Ricardo De Souza Arruda	2005	28
18	Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes Journal of Applied Physics ·Ti Wang, Wenrui Mu, F. Ranalli, Vasyl Volodymyrovych Lytvyn, Jie Bai, J. P. R. David, P. J. Parbrook, Jin‐Ping Ao, Yasuhide Ohno	2005	9
19	Hydrogen-induced passivation of nitrogen inGaAs1−yNy Physical review. B, Condensed matter ·M. Bissiri, G. Baldassarri Höger von Högersthal, A. Polimeni, Yusuf Djohan, F. Ranalli, M. Capizzi, A. Amore Bonapasta, Fan Jiang, Michael Stavola, D. Gollub, M. Fischer, M. Reinhardt, A. Forchel	2002	23
20	Interplay of nitrogen and hydrogen in InxGa1−xAs1−yNy/GaAs heterostructures Physica B Condensed Matter ·A. Polimeni, G. Baldassarri Höger von Högersthal, M. Bissiri, Yusuf Djohan, F. Ranalli, M. Capizzi, A. Frova, A. Miriametro, M. Geddo, M. Fischer, M. Reinhardt, A. Forchel	2001	5

About F. Ranalli

F. Ranalli is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Materials Chemistry and Mechanics of Materials, having authored 20 papers that have together received 309 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (19 papers), Ga2O3 and related materials (11 papers), ZnO doping and properties (9 papers), Semiconductor Quantum Structures and Devices (7 papers), Semiconductor materials and devices (4 papers), Metal and Thin Film Mechanics (3 papers), Nanowire Synthesis and Applications (2 papers) and Photocathodes and Microchannel Plates (2 papers). The work is most often cited by research in Condensed Matter Physics (261 citations), Electronic, Optical and Magnetic Materials (116 citations), Atomic and Molecular Physics, and Optics (124 citations), Materials Chemistry (120 citations) and Mechanics of Materials (50 citations). F. Ranalli has collaborated with scholars based in United Kingdom, Italy and Germany. Frequent co-authors include P. J. Parbrook, Jie Bai, Qi Wang, Ti Wang, R. Airey, A. G. Cullis, G. Hill, D. J. Wallis, T. Martin and Tao Wang. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Physics D Applied Physics, Journal of Crystal Growth and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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