R.H. Wallis

508 total citations
33 papers, 415 citations indexed

About

R.H. Wallis is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, R.H. Wallis has authored 33 papers receiving a total of 415 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 9 papers in Condensed Matter Physics. Recurrent topics in R.H. Wallis's work include Semiconductor Quantum Structures and Devices (15 papers), Semiconductor materials and devices (12 papers) and Semiconductor materials and interfaces (8 papers). R.H. Wallis is often cited by papers focused on Semiconductor Quantum Structures and Devices (15 papers), Semiconductor materials and devices (12 papers) and Semiconductor materials and interfaces (8 papers). R.H. Wallis collaborates with scholars based in United Kingdom, France and United States. R.H. Wallis's co-authors include Adam Zylbersztejn, H. Thomas, J. M. Besson, N. Sol, A.J. Moseley, J. I. Davies, R A Davies, H. Thomas, A.C. Marshall and W. A. Phillips and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics Condensed Matter.

In The Last Decade

R.H. Wallis

32 papers receiving 375 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
R.H. Wallis United Kingdom	12	306	234	143	52	45	33	415
J. C. Grenet France	11	195 0.6×	164 0.7×	117 0.8×	183 3.5×	67 1.5×	31	386
Ung Hwan Pi South Korea	8	181 0.6×	304 1.3×	135 0.9×	115 2.2×	36 0.8×	22	432
Ichiro Shiraki Japan	10	208 0.7×	413 1.8×	55 0.4×	144 2.8×	7 0.2×	21	516
R. D. Long Ireland	10	348 1.1×	129 0.6×	80 0.6×	150 2.9×	5 0.1×	16	394
Yasuo Kanai Japan	13	289 0.9×	173 0.7×	40 0.3×	357 6.9×	37 0.8×	30	512
V.I. Fistul Russia	3	251 0.8×	157 0.7×	44 0.3×	315 6.1×	19 0.4×	7	433
J.H. Mazur United States	7	266 0.9×	224 1.0×	61 0.4×	98 1.9×	13 0.3×	19	351
Thomas Andreev France	11	170 0.6×	112 0.5×	157 1.1×	152 2.9×	20 0.4×	27	325
Kazuto Ikeda Japan	12	196 0.6×	115 0.5×	180 1.3×	136 2.6×	4 0.1×	59	404
L. Messick United States	13	447 1.5×	338 1.4×	62 0.4×	166 3.2×	28 0.6×	30	538

Countries citing papers authored by R.H. Wallis

Since Specialization

Citations

This map shows the geographic impact of R.H. Wallis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.H. Wallis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.H. Wallis more than expected).

Fields of papers citing papers by R.H. Wallis

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.H. Wallis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.H. Wallis. The network helps show where R.H. Wallis may publish in the future.

Co-authorship network of co-authors of R.H. Wallis

This figure shows the co-authorship network connecting the top 25 collaborators of R.H. Wallis. A scholar is included among the top collaborators of R.H. Wallis based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R.H. Wallis. R.H. Wallis is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Hughes, B.T., et al.. (2003). Fabrication and characterisation of Al/sub 0.23/Ga/sub 0.77/N/GaN HFETs on MOVPE layers. 59–64.

Herbert, D C, Michael J. Uren, B.T. Hughes, et al.. (2002). Monte Carlo simulations of AlGaN/GaN heterojunction field-effect transistors (HFETs). Journal of Physics Condensed Matter. 14(13). 3479–3497. 13 indexed citations

Davies, R A, Stephen Jones, W. A. Phillips, et al.. (2002). The gate-length dependent performance of AlGaN/GaN HFETs with silicon nitride passivation. 76–81. 3 indexed citations

Davies, R A, et al.. (2002). GaInP/GaAs HBTs: state of the art and future trends. 33. 40–44. 3 indexed citations

Uren, Michael J., B.T. Hughes, J.C.H. Birbeck, et al.. (2001). Electrical characterisation of AlGaN/GaN heterostructure wafers for high-power HFETs. Journal of Crystal Growth. 230(3-4). 579–583. 9 indexed citations

Bougrioua, Z., Ingrid Moerman, Nikhil Sharma, et al.. (2001). Material optimisation for AlGaN/GaN HFET applications. Journal of Crystal Growth. 230(3-4). 573–578. 25 indexed citations

Phillips, W. A., et al.. (2000). Gallium Nitride Microwave Devices for Space Applications. ESASP. 439. 225. 2 indexed citations

Wallis, R.H., et al.. (1995). Low noise fibre optic receiver operating from2 to 20 GHz. Electronics Letters. 31(11). 921–922. 3 indexed citations

Urquhart, J. S., et al.. (1990). Gate technologies for AlInAs/InGaAs HEMTs. European Solid-State Device Research Conference. 117–120. 2 indexed citations

10.

White, C.R.H., L. Eaves, E.S. Alves, et al.. (1989). Magnetic field investigations of resonant tunnelling devices grown by MOCVD. Superlattices and Microstructures. 6(2). 193–197. 7 indexed citations

11.

Wallis, R.H., et al.. (1988). InGaAs pin photodiodes on recessed semi-insulating GaAs substrates. IEE Proceedings J Optoelectronics. 135(1). 2–2. 1 indexed citations

12.

Bradley, R. R., et al.. (1987). GaInAs PIN photodiodes grown on silicon substrates for 1.55 μm detection. Electronics Letters. 23(20). 1094–1095. 13 indexed citations

13.

Wallis, R.H., et al.. (1986). Surface influence on the conductance DLTS spectra of GaAs MESFET's. IEEE Transactions on Electron Devices. 33(10). 1447–1453. 78 indexed citations

14.

Moseley, A.J., et al.. (1986). High-efficiency, low-leakage MOCVD-grown GaInAs/AlInAs heterojunction photodiodes for detection to 2.4μm. Electronics Letters. 22(22). 1206–1207. 16 indexed citations

15.

Moseley, A.J., et al.. (1986). Ga0.28In0.72As/Al0.28In0.72As 2 μm photodiode heterostructures prepared by atmospheric pressure MOCVD. Journal of Crystal Growth. 77(1-3). 606–612. 7 indexed citations

16.

Wallis, R.H., Adam Zylbersztejn, & J. M. Besson. (1981). Pressure dependence of the energy levels of irradiation-induced defects in GaAs. Applied Physics Letters. 38(9). 698–700. 27 indexed citations

17.

Friederich, A., Doron Kaplan, N. Sol, & R.H. Wallis. (1978). E.P.R. studies of the phase transitions in β-phase vanadium bronzes NaxV2O5. Journal de Physique Lettres. 39(19). 343–346. 7 indexed citations

18.

Zylbersztejn, Adam, R.H. Wallis, & J. M. Besson. (1978). Pressure dependence of the deep level associated with oxygen in n-GaAs. Applied Physics Letters. 32(11). 764–766. 28 indexed citations

19.

Gunning, W. J., et al.. (1978). Dielectric constant and microwave conductivity of the vanadium bronze Na0.33V2O5. Solid State Communications. 26(3). 155–159. 10 indexed citations

20.

Wallis, R.H., N. Sol, & Adam Zylbersztejn. (1977). Anisotropic conductivity of the vanadium bronze Na0.33V2O5. Solid State Communications. 23(8). 539–542. 42 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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