N. S. Saks

3.6k total citations
83 papers, 2.8k citations indexed

About

N. S. Saks is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, N. S. Saks has authored 83 papers receiving a total of 2.8k indexed citations (citations by other indexed papers that have themselves been cited), including 82 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 9 papers in Materials Chemistry. Recurrent topics in N. S. Saks's work include Semiconductor materials and devices (61 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and Silicon Carbide Semiconductor Technologies (24 papers). N. S. Saks is often cited by papers focused on Semiconductor materials and devices (61 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and Silicon Carbide Semiconductor Technologies (24 papers). N. S. Saks collaborates with scholars based in United States, China and Germany. N. S. Saks's co-authors include Mario G. Ancona, D. B. Brown, Anant Agarwal, John A. Modolo, Daniel M. Fleetwood, S. S. Mani, Richard B. Klein, R. W. Rendell, David L. Griscom and C. M. Dozier and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

N. S. Saks

83 papers receiving 2.7k citations

Peers

N. S. Saks

EEE

AMPO

EOMM

H. E. Boesch United States

Björn Magnusson Sweden

P. Höschl Czechia

Thomas Adam United States

C. Dupré France

Daniel J. Ripin United States

Takuji Hosoi Japan

D. E. Lacklison United Kingdom

S. M. Kelso United States

Alexei Kanareykin United States

H. E. Boesch United States

N. S. Saks

2.7k ×1.0

EEE

434 ×1.2

333 ×1.0

AMPO

71 ×0.7

EOMM

62 ×0.6

Citations per year, relative to N. S. Saks N. S. Saks (= 1×) peers H. E. Boesch

Countries citing papers authored by N. S. Saks

Since Specialization

Citations

This map shows the geographic impact of N. S. Saks's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. S. Saks with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. S. Saks more than expected).

Fields of papers citing papers by N. S. Saks

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. S. Saks. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. S. Saks. The network helps show where N. S. Saks may publish in the future.

Co-authorship network of co-authors of N. S. Saks

This figure shows the co-authorship network connecting the top 25 collaborators of N. S. Saks. A scholar is included among the top collaborators of N. S. Saks based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. S. Saks. N. S. Saks is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Saks, N. S. & Sei‐Hyung Ryu. (2004). Hall Effect Measurements in SiC Buried-Channel MOS Devices. Materials science forum. 457-460. 1287–1292. 2 indexed citations

Ryu, Sei‐Hyung, Anant Agarwal, Jim Richmond, et al.. (2002). 10 A, 2.4 kV Power DiMOSFETs in 4H-SiC. IEEE Electron Device Letters. 23(6). 321–323. 39 indexed citations

Ryu, Sei‐Hyung, Anant Agarwal, Jim Richmond, et al.. (2002). Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC. Materials science forum. 389-393. 1195–1198. 17 indexed citations

Jernigan, Glenn G., Robert E. Stahlbush, & N. S. Saks. (2000). Effect of oxidation and reoxidation on the oxide-substrate interface of 4H- and 6H-SiC. Applied Physics Letters. 77(10). 1437–1439. 44 indexed citations

Saks, N. S.. (1997). Measurement of single interface trap capture cross sections with charge pumping. Applied Physics Letters. 70(25). 3380–3382. 18 indexed citations

Fleetwood, Daniel M. & N. S. Saks. (1996). Oxide, interface, and border traps in thermal, N2O, and N2O-nitrided oxides. Journal of Applied Physics. 79(3). 1583–1594. 123 indexed citations

Saks, N. S., et al.. (1995). Nitrogen depletion during oxidation in N2O. Applied Physics Letters. 67(3). 374–376. 74 indexed citations

bosch, G. Van den, G. Groeseneken, H.E. Maes, Richard B. Klein, & N. S. Saks. (1994). Oxide and interface degradation resulting from substrate hot-hole injection in metal-oxide-semiconductor field-effect transistors at 295 and 77 K. Journal of Applied Physics. 75(4). 2073–2080. 26 indexed citations

Saks, N. S., Mario G. Ancona, & Wenliang Chen. (1992). Evaluation of the 3-level charge pumping technique for characterizing interface traps. Applied Physics Letters. 60(18). 2261–2263. 14 indexed citations

10.

Saks, N. S., et al.. (1991). Formation of interface traps in metal-oxide-semiconductor devices during isochronal annealing after irradiation at 78 K. Journal of Applied Physics. 70(12). 7434–7442. 24 indexed citations

11.

Brown, D. B. & N. S. Saks. (1991). Time dependence of radiation-induced interface trap formation in metal-oxide-semiconductor devices as a function of oxide thickness and applied field. Journal of Applied Physics. 70(7). 3734–3747. 133 indexed citations

12.

Klein, Richard B., et al.. (1990). Saturation of radiation-induced threshold-voltage shifts in thin-oxide MOSFETs at 80 K. IEEE Transactions on Nuclear Science. 37(6). 1690–1695. 4 indexed citations

13.

Saks, N. S. & Mario G. Ancona. (1987). Generation of Interface States by Ionizing Radiation at 80K Measured by Charge Pumping and Subthreshold Slope Techniques. IEEE Transactions on Nuclear Science. 34(6). 1347–1354. 50 indexed citations

14.

Saks, N. S., Paul Heremans, Luc Van den hove, et al.. (1986). Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique. IEEE Transactions on Electron Devices. 33(10). 1529–1534. 63 indexed citations

15.

Saks, N. S., Mario G. Ancona, & John A. Modolo. (1984). Radiation Effects in MOS Capacitors with Very Thin Oxides at 80degK. IEEE Transactions on Nuclear Science. 31(6). 1249–1255. 183 indexed citations

16.

Saks, N. S.. (1982). Interface state trapping and dark current generation in buried-channel charge-coupled devices. Journal of Applied Physics. 53(3). 1745–1753. 11 indexed citations

17.

Saks, N. S.. (1980). A New Technique for Hardening CCD Imagers by Suppression of Interface State Generation. IEEE Transactions on Nuclear Science. 27(6). 1727–1734. 3 indexed citations

18.

Killiany, J. M. & N. S. Saks. (1980). <title>Metal Insulated Semiconductor (MIS) Radiation Effects Considerations For Infrared Focal-Plane Arrays</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 217. 192–201. 1 indexed citations

19.

Saks, N. S.. (1977). Investigation of Bulk Electron Traps Created by Fast Neutron Irradiation in a Buried N-Channel CCD. IEEE Transactions on Nuclear Science. 24(6). 2153–2157. 23 indexed citations

20.

Killiany, J. M., et al.. (1975). Effects of Ionizing Radiation on a 256-Stage Linear CCD Imager. IEEE Transactions on Nuclear Science. 22(6). 2634–2638. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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