D.E. Ioannou

639 citations

41 papers · 439 indexed · h-index 11

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Silicon and Solar Cell Technologies
- Silicon Carbide Semiconductor Technologies
- Thin-Film Transistor Technologies
Surfaces, Coatings and Films

Papers in

Electrical and Electronic Engineering 40
- Semiconductor materials and devices 27
- Integrated Circuits and Semiconductor Failure Analysis 20
- Advancements in Semiconductor Devices and Circuit Design 20
- Silicon and Solar Cell Technologies 11
- Silicon Carbide Semiconductor Technologies 6
- Electrostatic Discharge in Electronics 4
Surfaces, Coatings and Films 4
- Electron and X-Ray Spectroscopy Techniques 4

Co-authors: C.A. Dimitriadis N. A. Papanicolaou P. E. R. Nordquist K.G. Stephens J. Alderman P.L.F. Hemment J.B. Butcher Simon Davidson
Journals: IEEE Transactions on Electron Devices (8 papers)Solid-State Electronics (3 papers)IEEE Electron Device Letters (2 papers)Solid State Communications (2 papers)IEEE Transactions on Device and Materials Reliability (1 paper)
Partner nations: United States United Kingdom Greece

In The Last Decade

D.E. Ioannou

36 papers receiving 412 citations

Peers

Countries citing papers authored by D.E. Ioannou

Since Specialization

Citations

This map shows the geographic impact of D.E. Ioannou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.E. Ioannou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.E. Ioannou more than expected).

Fields of papers citing papers by D.E. Ioannou

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.E. Ioannou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.E. Ioannou. The network helps show where D.E. Ioannou may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D.E. Ioannou, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D.E. Ioannou Line = papers co-authored together D.E. Ioannou links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Hot carrier (HC) and bias-temperature-instability (BTI) degradation of MuGFETs on silicon oxide and silicon nitride buried layers jirui liu, Isabelle Ferain, Aryan Afzalian, 黄睿, Ran Yan, Nima Dehdashti Akhavan, Pedram Razavi, Wei Xiong, J.-P. Colinge, Cindy Colinge, D.E. Ioannou	2009	3
2	Stress-induced defect generation in HfO<inf>2</inf>/SiO<inf>2</inf> stacks observed by using charge pumping and low frequency noise measurements Hao Xiong, Dawei Heh, Khaoula El Ouazzani, Xiaoxiao Zhu, Moshe Gurfinkel, G. Bersuker, D.E. Ioannou, Curt A. Richter, Kin P. Cheung, John S. Suehle	2008	11
3	Worst case stress conditions for hot carrier induced degradation of p-channel SOI MOSFETs Solid-State Electronics ·Dimitris P. Ioannou, Rahul Mishra, D.E. Ioannou, S.T. Liu, H.L. Hughes	2006	5
4	NBTI in SOI p-Channel MOS Field Effect Transistors S.T. Liu, D.E. Ioannou, Dimitris P. Ioannou, Adam Small, H.L. Hughes	2006	5
5	Electrostatic discharge induced oxide breakdown characterization in a 0.1 μm CMOS technology Akram Salman, А В Потапов, M.M. El-Wakil, Sara Nassaj, Segundo Manuel Montes-Viloria, PINAR PINARLI ÖNEN, Siamak Farajzadeh Khosroshahi, D.E. Ioannou	2003	2
6	NMOSFET ESD self-protection strategy and underlying failure mechanism in advanced 0.13-μm CMOS technology IEEE Transactions on Device and Materials Reliability ·Akram Salman, А В Потапов, Wolfgang Stadler, Kai Esmark, PINAR PINARLI ÖNEN, Segundo Manuel Montes-Viloria, D.E. Ioannou	2002	10
7	Photocurrent measurements of electron traps on ITOX processed SIMOX structures R.K. Lawrence, D.E. Ioannou, Salim A. Salim, H.L. Hughes	2002	1
8	Design and analysis of a novel mixed accumulation/inversion mode FD SOI MOSFET LIU Ni, D.E. Ioannou	2002	0
9	Transient thermal simulations of a three-dimensional unit cell in power control systems and high-power microwave devices Solid-State Electronics ·F. A. Buot, J. Mittereder, W.T. Anderson, D.E. Ioannou	2002	3
10	Increased channel edge impact ionization in SOI MOSFET's and effects on device operation Franklin L. Duan, 達郎宮里, D.E. Ioannou	2002	5
11	Channel Coupling and Edge Effect Imposed Trade-offs on Fully-Depleted (FD) SOI MOSFET's European Solid-State Device Research Conference ·D.E. Ioannou, Franklin L. Duan, A Curtis Lee, H.L. Hughes	1998	1
12	Hot hole induced interface state generation and annihilation in SOI MOSFETs IEEE Electron Device Letters ·Soumendu Sinha, Leonardo Fonseca da Rocha, D.E. Ioannou, G.J. Campisi, H.L. Hughes	1996	5
13	Interface characterization of fully depleted SOI MOSFETs by the dynamic transconductance technique IEEE Electron Device Letters ·D.E. Ioannou, Xueqian Zhong, B. Mazhari, G.J. Campisi, H.L. Hughes	1991	12
14	The effect of heat treatment on Au Schottky contacts on β-SiC IEEE Transactions on Electron Devices ·D.E. Ioannou, N. A. Papanicolaou, P. E. R. Nordquist	1987	49
15	A fine-line-spot-position (FLSP) sensitive photodetector IEEE Transactions on Electron Devices ·D.E. Ioannou, 美琪张	1987	5
16	On the Barrier Height of Al/p-Si Schottky Diodes physica status solidi (a) ·D.E. Ioannou, Ying Huang, P.K. McLarty, Shane Johnson	1986	7
17	Effect of surface recombination on the decay of excess minority carriers in semiconductors induced by finely focused picosecond pulsed laser beams Journal of Applied Physics ·D.E. Ioannou, Elis Sandra Cardnalle Victor de Lima	1984	9
18	Analysis of the photocurrent decay (PCD) method for measuring minority-carrier lifetime in solar cells IEEE Transactions on Electron Devices ·D.E. Ioannou	1983	6
19	Comments of the Ev + 0.45 eV Quenched-in Level in Silicon physica status solidi (a) ·D.E. Ioannou	1982	2
20	A SEM-EBIC minority-carrier diffusion-length measurement technique IEEE Transactions on Electron Devices ·D.E. Ioannou, C.A. Dimitriadis	1982	102

About D.E. Ioannou

D.E. Ioannou is a scholar working on Electrical and Electronic Engineering, Surfaces, Coatings and Films, Instrumentation, Atomic and Molecular Physics, and Optics and Computational Mechanics, having authored 41 papers that have together received 439 indexed citations. Recurring topics across this work include Semiconductor materials and devices (27 papers), Integrated Circuits and Semiconductor Failure Analysis (20 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers), Silicon and Solar Cell Technologies (11 papers), Semiconductor materials and interfaces (7 papers), Silicon Carbide Semiconductor Technologies (6 papers), Electrostatic Discharge in Electronics (4 papers) and Electron and X-Ray Spectroscopy Techniques (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (400 citations), Surfaces, Coatings and Films (39 citations), Atomic and Molecular Physics, and Optics (146 citations), Computational Mechanics (46 citations) and Nuclear Energy and Engineering (1 citation). D.E. Ioannou has collaborated with scholars based in United States, United Kingdom and Greece. Frequent co-authors include C.A. Dimitriadis, N. A. Papanicolaou, P. E. R. Nordquist, K.G. Stephens, J. Alderman, P.L.F. Hemment, J.B. Butcher, Simon Davidson, Xuejun Zhao and H.L. Hughes. Their work appears in journals such as IEEE Transactions on Electron Devices, Solid-State Electronics, IEEE Electron Device Letters, Solid State Communications and IEEE Transactions on Device and Materials Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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