A. Stesmans

2.2k total citations
62 papers, 1.7k citations indexed

About

A. Stesmans is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A. Stesmans has authored 62 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Electrical and Electronic Engineering, 47 papers in Materials Chemistry and 20 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A. Stesmans's work include Semiconductor materials and devices (52 papers), Silicon Nanostructures and Photoluminescence (22 papers) and Semiconductor materials and interfaces (17 papers). A. Stesmans is often cited by papers focused on Semiconductor materials and devices (52 papers), Silicon Nanostructures and Photoluminescence (22 papers) and Semiconductor materials and interfaces (17 papers). A. Stesmans collaborates with scholars based in Belgium, United States and Germany. A. Stesmans's co-authors include V. V. Afanas’ev, V. V. Afanas’ev, Michel Houssa, M. M. Heyns, Konstantin Iakoubovskii, M. Naili, M. Tuominen, Suvi Haukka, Darrell G. Schlom and J. Schubert and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A. Stesmans

62 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Stesmans Belgium 22 1.4k 1.1k 344 194 103 62 1.7k
A. Stesmans Belgium 21 1.2k 0.8× 959 0.9× 431 1.3× 188 1.0× 113 1.1× 62 1.6k
Mengbing Huang United States 22 808 0.6× 1.1k 1.0× 433 1.3× 206 1.1× 153 1.5× 86 1.5k
Timofey V. Perevalov Russia 24 1.5k 1.0× 1.2k 1.1× 134 0.4× 184 0.9× 68 0.7× 88 1.8k
J. Barzola‐Quiquia Germany 21 452 0.3× 1.1k 1.0× 399 1.2× 258 1.3× 88 0.9× 80 1.4k
M. E. Zvanut United States 21 939 0.6× 565 0.5× 208 0.6× 395 2.0× 74 0.7× 99 1.3k
J.E. Bourée France 17 616 0.4× 720 0.7× 166 0.5× 140 0.7× 142 1.4× 89 1.1k
M. Gribelyuk United States 20 2.7k 1.9× 1.4k 1.3× 549 1.6× 294 1.5× 185 1.8× 63 2.9k
J.K.N. Lindner Germany 20 751 0.5× 574 0.5× 265 0.8× 123 0.6× 210 2.0× 124 1.2k
D. Nesheva Bulgaria 18 955 0.7× 1.1k 1.0× 234 0.7× 131 0.7× 240 2.3× 122 1.3k
Xide Xie China 20 624 0.4× 1.0k 1.0× 495 1.4× 330 1.7× 444 4.3× 81 1.5k

Countries citing papers authored by A. Stesmans

Since Specialization
Citations

This map shows the geographic impact of A. Stesmans's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Stesmans with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Stesmans more than expected).

Fields of papers citing papers by A. Stesmans

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Stesmans. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Stesmans. The network helps show where A. Stesmans may publish in the future.

Co-authorship network of co-authors of A. Stesmans

This figure shows the co-authorship network connecting the top 25 collaborators of A. Stesmans. A scholar is included among the top collaborators of A. Stesmans based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Stesmans. A. Stesmans is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jivanescu, M., et al.. (2014). Functionality of thermally hydrogen-passivated interfaces of oxidized crystalline arrays of Si nanowires on (100)Si. Europhysics Letters (EPL). 106(6). 66003–66003. 4 indexed citations
2.
Radu, Iuliana, et al.. (2014). Band alignment and effective work function of atomic‐layer deposited VO2 and V2O5 films on SiO2 and Al2O3. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 12(1-2). 238–241. 5 indexed citations
3.
Stesmans, A., et al.. (2012). Near-interface Si substrate 3d metal contamination during atomic layer deposition processing detected by electron spin resonance. Journal of Applied Physics. 111(11). 4 indexed citations
4.
Afanas’ev, V. V., A. Stesmans, L. F. Edge, et al.. (2006). Band alignment between (100) Si and amorphous LaAlO3, LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces. Applied Physics Letters. 88(3). 33 indexed citations
5.
Stesmans, A., K. Clémer, & V. V. Afanas’ev. (2005). Electron spin resonance probing of fundamental point defects in nm-sized silica particles. Journal of Non-Crystalline Solids. 351(21-23). 1764–1769. 6 indexed citations
6.
Afanas’ev, V. V., et al.. (2005). Electrostatic potential perturbation at the polycrystalline Si∕HfO2 interface. Applied Physics Letters. 86(7). 5 indexed citations
7.
Afanas’ev, V. V., A. Stesmans, Chao Zhao, et al.. (2004). Band alignment between (100)Si and complex rare earth∕transition metal oxides. Applied Physics Letters. 85(24). 5917–5919. 130 indexed citations
8.
Pierreux, Dieter & A. Stesmans. (2003). P b -type interface defects in (100)Si/SiO2 structures grown in ozonated water solution. Journal of Applied Physics. 93(7). 4331–4333. 2 indexed citations
9.
Stesmans, A., V. V. Afanas’ev, & Michel Houssa. (2002). Electron spin resonance analysis of interfacial Si dangling bond defects in stacks of ultrathin SiO2, Al2O3, and ZrO2 layers on (100)Si. Journal of Non-Crystalline Solids. 303(1). 162–166. 6 indexed citations
10.
Stesmans, A., et al.. (2002). Structural degradation of thermalSiO2on Si by high-temperature annealing: Defect generation. Physical review. B, Condensed matter. 66(4). 32 indexed citations
11.
12.
Stesmans, A., et al.. (2002). Characterization of S centers generated by thermal degradation in SiO2 on (100)Si. Applied Physics Letters. 80(25). 4753–4755. 3 indexed citations
13.
Afanas’ev, V. V. & A. Stesmans. (2002). Hole trapping in ultrathin Al2O3 and ZrO2 insulators on silicon. Applied Physics Letters. 80(7). 1261–1263. 28 indexed citations
14.
Bhattacharjee, Baibaswata, Dibyendu Ganguli, Konstantin Iakoubovskii, A. Stesmans, & S. Chaudhuri. (2002). Synthesis and characterization of sol-gel derived ZnS : Mn2+ nanocrystallites embedded in a silica matrix. Bulletin of Materials Science. 25(3). 175–180. 92 indexed citations
15.
Iakoubovskii, Konstantin & A. Stesmans. (2001). Characterization of Defects in as-Grown CVD Diamond Films and HPHT Diamond Powders by Electron Paramagnetic Resonance. physica status solidi (a). 186(2). 199–206. 22 indexed citations
16.
Stesmans, A. & V. V. Afanas’ev. (2000). Paramagnetic defects at the interface of ultrathin oxides grown under vacuum ultraviolet photon excitation on (111) and (100) Si. Applied Physics Letters. 77(10). 1469–1471. 25 indexed citations
17.
Afanas’ev, V. V. & A. Stesmans. (2000). Pressure dependence of Si/SiO2 degradation suppression by helium. Journal of Applied Physics. 87(10). 7338–7341. 7 indexed citations
18.
Afanas’ev, V. V. & A. Stesmans. (1999). Ionisation and trapping of hydrogen at SiO2 interfaces. Materials Science and Engineering B. 58(1-2). 56–59. 11 indexed citations
19.
Stesmans, A. & V. V. Afanas’ev. (1998). Hydrogen-induced thermal interface degradation in (111) Si/SiO2 revealed by electron-spin resonance. Applied Physics Letters. 72(18). 2271–2273. 40 indexed citations
20.
Wu, Yuchen & A. Stesmans. (1988). Nature of paramagnetic centers ina-Si anda-Si:H. Physical review. B, Condensed matter. 38(4). 2779–2786. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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