M. D. Bremser

4.8k citations

76 papers · 4.0k indexed · 4 hit papers · h-index 30

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 75
- GaN-based semiconductor devices and materials 75
Electronic, Optical and Magnetic Materials 30
- Ga2O3 and related materials 30

Co-authors: R. F. Davis Tsvetanka Zheleva Okhyun Nam W. G. Perry R. J. Nemanich T. Suski E. R. Weber Joel W. Ager
Journals: Applied Physics Letters (15 papers)Journal of Electronic Materials (6 papers)Physical review. B, Condensed matter (5 papers)Journal of Applied Physics (4 papers)MRS Internet Journal of Nitride Semiconductor Research (2 papers)
Partner nations: United States Germany Poland

In The Last Decade

M. D. Bremser

75 papers receiving 3.9k citations

Hit Papers

align trajectories log scale

Cleaning of AlN and GaN surfaces 1998 · 273 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

1998 Journal of Applied Physics
1997 Applied Physics Letters
1997 Applied Physics Letters
1996 Physical review. B, Condensed matter

Peers

Countries citing papers authored by M. D. Bremser

Since Specialization

Citations

This map shows the geographic impact of M. D. Bremser's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. D. Bremser with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. D. Bremser more than expected).

Fields of papers citing papers by M. D. Bremser

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. D. Bremser. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. D. Bremser. The network helps show where M. D. Bremser may publish in the future.

Co-authors

The 25 scholars most cited alongside M. D. Bremser, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. D. Bremser Line = papers co-authored together M. D. Bremser links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Thermally induced variation in barrier height and ideality factor of Ni/Au contacts to p-GaN Journal of Electronic Materials ·J. Veerkamp, Ricky W. Chuang, Yue Zhao, Guido W. I Mbens, 日本放送協会取材班, Zhentao Dong, K Ding, M. D. Bremser	2000	6
2	Reproducibility and Uniformity of MOVPE Planetary Reactors® for the Growth of GaN Based Materials MRS Proceedings ·M. Heuken, H. Protzmann, 李诗瑶, J J Freeze, Lawman, M. D. Bremser, Maureen M Canario de la Torre	1999	2
3	Observation of highly dispersive surface states on GaN(0001)1×1 Physical review. B, Condensed matter ·Yimin Chao, Cristian Stagarescu, James E. Downes, Philip J. Ryan, Kevin E. Smith, Drew Hanser, M. D. Bremser, R. F. Davis	1999	35
4	Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy Journal of Electronic Materials ·Okhyun Nam, Tsvetanka Zheleva, M. D. Bremser, R. F. Davis	1998	83
5	Raman Analysis of Electron-Phonon Interaction in GaN Films APS March Meeting Abstracts ·Leah Bergman, M. D. Bremser, J. A. Christman, Sean W. King, R. F. Davis, R. J. Nemanich	1997	0
6	Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates Journal of Electronic Materials ·W. G. Perry, Tsvetanka Zheleva, M. D. Bremser, R. F. Davis, W. Shan, J. J. Song	1997	60
7	Lateral Epitaxy Formation Mechanism And Microstructure Of Selectively Grown Gan Structures MRS Proceedings ·Tsvetanka Zheleva, Okhyun Nam, A. Reuß, M. D. Bremser, R. F. Davis	1997	12
8	Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization Solid-State Electronics ·R. F. Davis, T. W. Weeks, M. D. Bremser, Satoru Tanaka, R. S. Kern, Zlatko Sitar, K. S. Ailey, W. G. Perry, C. Wang	1997	2
9	Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films Materials Science and Engineering B ·N. V. Edwards, Seunghyun Yoo, M. D. Bremser, Dhirendra Kumar Das, Debbie Johan arredondo arteaga, Nathan Perkins, T. W. Weeks, Nathan Clarkson, R. A. Stall, T. F. Kuech, R. F. Davis, D. E. Aspnes	1997	3
10	Highly anisotropic, ultra-smooth patterning of GaN/SiC by low energy electron enhanced etching in DC plasma Journal of Electronic Materials ·H. P. Gillis, Maquoketa Corn, 富谷純子, M. D. Bremser, R. F. Davis	1997	21
11	Growth of AlN, GaN and AlxGa1 − xN thin films on vicinal and on-axis 6HSiC(0001) substrates Journal of the European Ceramic Society ·R. F. Davis, M. D. Bremser, W. G. Perry, K. S. Ailey	1997	7
12	Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications Applied Physics Letters ·Debbie L. Sticha, J. A. Christman, M. D. Bremser, Brandon Ward, R. F. Davis, R. J. Nemanich	1997	60
13	Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates Applied Physics Letters ·W. Shan, A. J. Fischer, J. J. Song, G. E. Bulman, Hoyoul Kong, М.Л. Лимонтова, W. G. Perry, M. D. Bremser, R. F. Davis	1996	45
14	Growth, Doping and Characterization of Al_xGa_1−xN Thin Film Alloys on 6H-SiC(0001) Substrates MRS Internet Journal of Nitride Semiconductor Research ·M. D. Bremser, W. G. Perry, Tsvetanka Zheleva, N. V. Edwards, Okhyun Nam, N.R. Parikh, D. E. Aspnes, R. F. Davis	1996	85
15	Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α(6H)–SiC(0001) substrates via organometallic vapor phase epitaxy Journal of materials research/Pratt's guide to venture capital sources ·T. W. Weeks, M. D. Bremser, K. S. Ailey, E.P. Carlson, W. G. Perry, E. L. Piner, N. A. El-Masry, R. F. Davis	1996	48
16	Bound Exciton Energies, Biaxial Strains, and Defect Microstructures in GaN/AlN/6H-SiC(0001) Heterostructures MRS Proceedings ·W. G. Perry, Tsvetanka Zheleva, K. J. Linthicum, M. D. Bremser, R. F. Davis, W. Shan, J. J. Song	1996	1
17	Selective Growth of GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC (0001) Multilayer Substrates Via Organometallic Vapor-Phase Epitaxy MRS Proceedings ·O. H. Nam, M. D. Bremser, Brandon Ward, R. J. Nemanich, R. F. Davis	1996	11
18	Issues and Examples Regarding Growth of AlN, GaN and Al_xGa_1−xN Thin Films via OMVPE and Gas Source MBE MRS Proceedings ·R. F. Davis, T. W. Weeks, M. D. Bremser, Satoru Tanaka, R. S. Kern, Zlatko Sitar, K. S. Ailey, W. G. Perry, C. Wang	1995	18
19	Ohmic Contact Formation to Doped GaN MRS Proceedings ·Laura L. Smith, M. D. Bremser, E.P. Carlson, T. W. Weeks, Yi Huang, Maliha Naaz, R. W. Carpenter, R. F. Davis	1995	18
20	Detection of Magnetic Resonance on Shallow Donor - Shallow Acceptor and Deep (2.2 eV) Recombination from GaN Films Grown on 6H-SiC MRS Proceedings ·E. R. Glaser, T. A. Kennedy, Steven W. Brown, J. A. Freitas, W. G. Perry, M. D. Bremser, T. W. Weeks, R. F. Davis	1995	6

About M. D. Bremser

M. D. Bremser is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 76 papers that have together received 4.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (75 papers), Ga2O3 and related materials (30 papers), Semiconductor materials and devices (26 papers), ZnO doping and properties (23 papers), Metal and Thin Film Mechanics (22 papers), Semiconductor Quantum Structures and Devices (13 papers), Silicon Carbide Semiconductor Technologies (12 papers) and Acoustic Wave Resonator Technologies (5 papers). The work is most often cited by research in Condensed Matter Physics (3.6k citations), Electronic, Optical and Magnetic Materials (1.6k citations), Mechanics of Materials (1.1k citations), Materials Chemistry (1.8k citations) and Atomic and Molecular Physics, and Optics (919 citations). M. D. Bremser has collaborated with scholars based in United States, Germany and Poland. Frequent co-authors include R. F. Davis, Tsvetanka Zheleva, Okhyun Nam, W. G. Perry, R. J. Nemanich, T. Suski, E. R. Weber, Joel W. Ager, S. Ruvimov and Joachim Krüger. Their work appears in journals such as Applied Physics Letters, Journal of Electronic Materials, Physical review. B, Condensed matter, Journal of Applied Physics and MRS Internet Journal of Nitride Semiconductor Research.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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