T.B. Joyce

1.2k total citations
71 papers, 953 citations indexed

About

T.B. Joyce is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, T.B. Joyce has authored 71 papers receiving a total of 953 indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Atomic and Molecular Physics, and Optics, 49 papers in Electrical and Electronic Engineering and 32 papers in Condensed Matter Physics. Recurrent topics in T.B. Joyce's work include Semiconductor Quantum Structures and Devices (45 papers), GaN-based semiconductor devices and materials (32 papers) and Semiconductor materials and devices (27 papers). T.B. Joyce is often cited by papers focused on Semiconductor Quantum Structures and Devices (45 papers), GaN-based semiconductor devices and materials (32 papers) and Semiconductor materials and devices (27 papers). T.B. Joyce collaborates with scholars based in United Kingdom, Germany and Türkiye. T.B. Joyce's co-authors include T.J. Bullough, Paul R. Chalker, M. A. Moram, C. J. Humphreys, BR Davidson, P.J. Goodhew, Z. H. Barber, R. C. Newman, T. Farrell and Menno J. Kappers and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

T.B. Joyce

68 papers receiving 923 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T.B. Joyce United Kingdom 19 577 553 438 278 201 71 953
Sohachi Iwai Japan 15 418 0.7× 409 0.7× 372 0.8× 308 1.1× 142 0.7× 49 771
W. E. Plano United States 13 596 1.0× 513 0.9× 318 0.7× 195 0.7× 112 0.6× 37 846
M. Baeumler Germany 17 585 1.0× 495 0.9× 490 1.1× 377 1.4× 129 0.6× 64 1.1k
R. A. Stall United States 20 614 1.1× 625 1.1× 571 1.3× 366 1.3× 134 0.7× 66 1.1k
T. Bretagnon France 19 406 0.7× 474 0.9× 437 1.0× 431 1.6× 194 1.0× 55 952
Yu. G. Shreter Russia 16 402 0.7× 514 0.9× 759 1.7× 446 1.6× 112 0.6× 60 1.0k
R. N. Kyutt Russia 13 337 0.6× 280 0.5× 276 0.6× 412 1.5× 105 0.5× 95 738
Y. K. Yeo United States 19 808 1.4× 460 0.8× 252 0.6× 402 1.4× 59 0.3× 95 1.0k
M.A. di Forte-Poisson France 17 574 1.0× 434 0.8× 455 1.0× 237 0.9× 109 0.5× 58 899
E. J. Thrush United Kingdom 21 709 1.2× 712 1.3× 989 2.3× 478 1.7× 253 1.3× 69 1.4k

Countries citing papers authored by T.B. Joyce

Since Specialization
Citations

This map shows the geographic impact of T.B. Joyce's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T.B. Joyce with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T.B. Joyce more than expected).

Fields of papers citing papers by T.B. Joyce

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T.B. Joyce. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T.B. Joyce. The network helps show where T.B. Joyce may publish in the future.

Co-authorship network of co-authors of T.B. Joyce

This figure shows the co-authorship network connecting the top 25 collaborators of T.B. Joyce. A scholar is included among the top collaborators of T.B. Joyce based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T.B. Joyce. T.B. Joyce is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhang, Sen, et al.. (2011). Growth, microstructure and morphology of epitaxial ScGaN films. physica status solidi (a). 209(1). 33–40. 14 indexed citations
2.
Chalker, Paul R., Richard J. Potter, T.B. Joyce, et al.. (2004). Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD. Journal of Materials Science Materials in Electronics. 15(11). 711–714. 3 indexed citations
3.
Joyce, T.B., T.J. Bullough, Paul R. Chalker, et al.. (2003). Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well. Solid-State Electronics. 47(3). 425–429. 4 indexed citations
4.
Joyce, T.B., et al.. (2002). AlAsバッファ層を用いたSi(111)上へのGaNの化学ビームエピタクシー. Journal of Physics D Applied Physics. 35(7). 620–624. 1 indexed citations
5.
Chalker, Paul R., et al.. (2001). Compositional variation in as-grown GaInNAs/GaAs quantum well structures. Journal of Crystal Growth. 233(1-2). 1–4. 16 indexed citations
6.
Joyce, T.B., Paul R. Chalker, & T. Farrell. (1999). Metalorganic molecular beam epitaxy of GaN and Al(Ga)N on GaAs(001) studied using laser reflectometry and reflectance anisotropy spectroscopy. Journal of Materials Science Materials in Electronics. 10(8). 585–588. 1 indexed citations
7.
8.
Joyce, T.B., T. Farrell, & BR Davidson. (1998). Reflectance anisotropy spectroscopy studies of the growth of carbon-doped GaAs by chemical beam epitaxy. Journal of Crystal Growth. 188(1-4). 211–219. 5 indexed citations
9.
Wagner, J., R. C. Newman, BR Davidson, et al.. (1997). Di-Carbon Defects in Annealed Highly Carbon Doped GaAs. Physical Review Letters. 78(1). 74–77. 37 indexed citations
10.
Bullough, T.J., et al.. (1995). The use of diethylsulphide for the doping of Al Ga1−As grown by chemical beam epitaxy. Journal of Crystal Growth. 146(1-4). 399–403. 2 indexed citations
11.
Joyce, T.B., et al.. (1995). The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy. Journal of Crystal Growth. 150. 644–648. 3 indexed citations
12.
Wagner, J., K. H. Bachem, BR Davidson, et al.. (1995). Dynamics of the H-CAscomplex in GaAs determined from Raman measurements. Physical review. B, Condensed matter. 51(7). 4150–4158. 15 indexed citations
13.
Wagner, J., R. Pritchard, BR Davidson, et al.. (1995). Raman spectroscopic study of the H-CAscomplex in epitaxial AlAs. Semiconductor Science and Technology. 10(5). 639–644. 7 indexed citations
14.
Joyce, T.B., T.J. Bullough, & T. Farrell. (1994). Optical monitoring of the growth of heavily doped GaAs by chemical beam epitaxy and of the in situ etching of GaAs using CBr4. Applied Physics Letters. 65(17). 2193–2195. 15 indexed citations
15.
Joyce, T.B., et al.. (1994). Metalorganic sulphur sources for the doping of GaAs grown by chemical beam epitaxy. Journal of Crystal Growth. 135(1-2). 31–35. 5 indexed citations
16.
Farrell, T., et al.. (1993). Microstructure of GaAs grown by excimer laser-assisted chemical beam epitaxy. Semiconductor Science and Technology. 8(6). 1112–1117. 4 indexed citations
17.
Davidson, BR, R. C. Newman, T.J. Bullough, & T.B. Joyce. (1993). Dynamics of the H-CAscomplex in GaAs. Physical review. B, Condensed matter. 48(23). 17106–17113. 29 indexed citations
18.
Davidson, BR, R. C. Newman, T.J. Bullough, & T.B. Joyce. (1993). Hydrogen wag modes and transverse carbon modes of H-CAscomplexes in GaAs doped with12C or13C. Semiconductor Science and Technology. 8(9). 1783–1785. 9 indexed citations
19.
Xing, Yanhui, et al.. (1992). High resolution transmission electron microscopy study of a GaAs/Si heterostructure grown by chemical beam epitaxy. Applied Physics Letters. 60(5). 616–618. 6 indexed citations
20.
Joyce, T.B.. (1990). An integrated safety system for CBE. Journal of Crystal Growth. 105(1-4). 299–305. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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