K. Board

1.2k total citations
62 papers, 859 citations indexed

About

K. Board is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, K. Board has authored 62 papers receiving a total of 859 indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Electrical and Electronic Engineering, 22 papers in Atomic and Molecular Physics, and Optics and 8 papers in Materials Chemistry. Recurrent topics in K. Board's work include Advancements in Semiconductor Devices and Circuit Design (31 papers), Semiconductor materials and devices (26 papers) and Silicon Carbide Semiconductor Technologies (21 papers). K. Board is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (31 papers), Semiconductor materials and devices (26 papers) and Silicon Carbide Semiconductor Technologies (21 papers). K. Board collaborates with scholars based in United Kingdom, United States and Canada. K. Board's co-authors include M. Darwish, L.F. Eastman, C. E. C. Wood, Philip Mawby, Rohit Malik, T. R. AuCoin, C.A.T. Salama, R. A. Stall, S. E. D. Habib and M.S. Towers and has published in prestigious journals such as Journal of Applied Physics, Reports on Progress in Physics and IEEE Transactions on Electron Devices.

In The Last Decade

K. Board

56 papers receiving 786 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
K. Board United Kingdom	15	773	454	86	72	49	62	859
O. Nakajima Japan	19	945 1.2×	491 1.1×	104 1.2×	58 0.8×	58 1.2×	64	986
H. Fukui United States	10	873 1.1×	352 0.8×	141 1.6×	36 0.5×	81 1.7×	19	897
L.D. Nguyen United States	16	958 1.2×	714 1.6×	122 1.4×	105 1.5×	81 1.7×	49	1.1k
M. Riaziat United States	12	539 0.7×	231 0.5×	25 0.3×	54 0.8×	68 1.4×	34	586
A. Shibatomi Japan	15	549 0.7×	472 1.0×	69 0.8×	47 0.7×	53 1.1×	46	643
C. Bozada United States	10	343 0.4×	233 0.5×	71 0.8×	72 1.0×	48 1.0×	38	403
A. Freundlich United States	12	344 0.4×	325 0.7×	83 1.0×	154 2.1×	128 2.6×	70	486
Mitsuhiro Shigeta Japan	10	384 0.5×	204 0.4×	51 0.6×	97 1.3×	40 0.8×	28	460
S. Mitsui Japan	14	437 0.6×	324 0.7×	72 0.8×	109 1.5×	58 1.2×	54	512
J. Selders Germany	9	367 0.5×	366 0.8×	31 0.4×	95 1.3×	47 1.0×	18	443

Countries citing papers authored by K. Board

Since Specialization

Citations

This map shows the geographic impact of K. Board's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Board with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Board more than expected).

Fields of papers citing papers by K. Board

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Board. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Board. The network helps show where K. Board may publish in the future.

Co-authorship network of co-authors of K. Board

This figure shows the co-authorship network connecting the top 25 collaborators of K. Board. A scholar is included among the top collaborators of K. Board based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Board. K. Board is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Mawby, Philip, et al.. (2002). Simulation of transient turn-off characteristics of a trench emitter insulated gate bipolar transistor (IGBT). 2. 697–700. 1 indexed citations

Zeng, Jun, Philip Mawby, M.S. Towers, & K. Board. (1996). Modelling of the quasisaturation behaviour in the high-voltage MOSFET with vertical trench gate. IEE Proceedings - Circuits Devices and Systems. 143(1). 28–28. 9 indexed citations

Mawby, Philip, Jun Zeng, & K. Board. (1995). Electrothermal simulation of power vdmos transistors. International Journal of Numerical Methods for Heat & Fluid Flow. 5(2). 185–192. 1 indexed citations

Board, K.. (1989). Semiconductor Device Modelling. IEE Review. 35(11). 424–424. 20 indexed citations

Shaari, Sahbudin, et al.. (1988). Transient analysis of a triangular-barrier bulk unipolar diode. IEE Proceedings I Solid State and Electron Devices. 135(5). 107–107. 8 indexed citations

Shaari, Sahbudin, et al.. (1988). Transient analysis of schottky-barrier diodes. IEE Proceedings I Solid State and Electron Devices. 135(3). 71–71. 2 indexed citations

Board, K. & M. Darwish. (1985). LDMOS transistors with implanted and deposited surface layers. IEE Proceedings I Solid State and Electron Devices. 132(4). 177–177. 5 indexed citations

Morgan, D. V., et al.. (1985). An introduction to microelectronic technology. 6 indexed citations

Board, K., et al.. (1984). Simulation of semiconductor devices and processes : proceedings of an international conference held at University College of Swansea, Swansea, U.K. on July 9th-12th, 1984.

10.

Darwish, M. & K. Board. (1984). Lateral resurfed COMFET. Electronics Letters. 20(12). 519–520. 69 indexed citations

11.

Darwish, M. & K. Board. (1984). Optimization of breakdown voltage and on-resistance of VDMOS transistors. IEEE Transactions on Electron Devices. 31(12). 1769–1773. 16 indexed citations

12.

Habib, S. E. D. & K. Board. (1983). Theory of triangular-barrier bulk unipolar diodes including minority-carrier effects. IEEE Transactions on Electron Devices. 30(2). 90–96. 18 indexed citations

13.

Board, K., et al.. (1983). Minimisation of on-resistance of VDMOS power FETs. Electronics Letters. 19(14). 519–521. 3 indexed citations

14.

Board, K. & M. Darwish. (1982). A new form of two-state switching device, using a bulk semiconductor barrier. Solid-State Electronics. 25(7). 571–575. 14 indexed citations

15.

Wood, C. E. C., L.F. Eastman, K. Board, K.E. Singer, & Rohit Malik. (1982). Regenerative switching device using MBE-grown gallium arsenide. Electronics Letters. 18(15). 676–677. 32 indexed citations

16.

Darwish, M. & K. Board. (1981). Theory of switching in MISIM structures. IEE Proceedings I Solid State and Electron Devices. 128(5). 165–165. 2 indexed citations

17.

Eastman, L.F., R. A. Stall, D. W. Woodard, et al.. (1980). Ballistic electron motion in GaAs at room temperature. Electronics Letters. 16(13). 524–525. 45 indexed citations

18.

Malik, Rohit, et al.. (1980). Planar-doped barriers in GaAs by molecular beam epitaxy. Electronics Letters. 16(22). 836–838. 183 indexed citations

19.

Shannon, J.M., et al.. (1975). Charge coupled F.E.T. devices (C.C.F.E.T.). 320–323.

20.

Board, K.. (1973). Thermal properties of annular and array geometry semiconductor devices on composite heat sinks. Solid-State Electronics. 16(12). 1315–1320. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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