G. B. Stringfellow

17.1k citations

322 papers · 13.3k indexed · 2 hit papers · h-index 59

Atomic and Molecular Physics, and Optics top 0.1%
- Semiconductor Quantum Structures and Devices 222
- Semiconductor materials and interfaces 57
Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials 52
Electrical and Electronic Engineering top 0.2%
- Semiconductor materials and devices 124
- Advanced Semiconductor Detectors and Materials 57
- Chalcogenide Semiconductor Thin Films 39
- Molecular Junctions and Nanostructures 36
Materials Chemistry top 1%
- Quantum Dots Synthesis And Properties 35
Electronic, Optical and Magnetic Materials top 2%

Co-authors: I. H. Ho R. M. Cohen C.A. Larsen N.I. Buchan H. R. Jen L. C. Su P. E. Greene M. J. Cherng
Cited by: Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering
Journals: Journal of Crystal Growth (89 papers)Journal of Applied Physics (75 papers)Applied Physics Letters (51 papers)
Partner nations: United States South Korea Germany

In The Last Decade

G. B. Stringfellow

322 papers receiving 12.5k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

1996 Applied Physics Letters
1989 CERN Document Server (European Organization for Nuclear Research)

Peers

Countries citing papers authored by G. B. Stringfellow

Since Specialization

Citations

This map shows the geographic impact of G. B. Stringfellow's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. B. Stringfellow with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. B. Stringfellow more than expected).

Fields of papers citing papers by G. B. Stringfellow

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. B. Stringfellow. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. B. Stringfellow. The network helps show where G. B. Stringfellow may publish in the future.

Co-authorship network

The 25 scholars most cited alongside G. B. Stringfellow, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. B. Stringfellow Line = papers co-authored together G. B. Stringfellow links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Nonequilibrium Composition Profiles of Alloy Quantum Dots and their Correlation with the Growth Mode Physical Review Letters ·Xiaobin Niu,G. B. Stringfellow,Feng Liu	2011	19
2	Dual-Surfactant effect on enhancing different p-type doping in GaP. Bulletin of the American Physical Society ·Junyi Zhu,G. B. Stringfellow,Feng Liu	2009	1
3	Dual-Surfactant Effect to Enhancep-Type Doping in III-V Semiconductor Thin Films Physical Review Letters ·Junyi Zhu,Feng Liu,G. B. Stringfellow	2008	29
4	Modulated Structures and Atomic Ordering in InP_ySb_1-y Layers Grown by Organometallic Vapor Phase Epitaxy Japanese Journal of Applied Physics ·Tae‐Yeon Seong,G. R. Booker,Andrew G. Norman,G. B. Stringfellow	2008	3
5	Effect of P precursor on surface structure and ordering in GaInP Journal of Crystal Growth ·B. Wang,宗西川,G. B. Stringfellow	1998	11
6	High brightness light emitting diodes Academic Press eBooks ·G. B. Stringfellow,M. G. Craford	1997	155
7	Lattice-Matched InAsN(X=0.38) on GaAs Grown by Molecular Beam Epitaxy MRS Proceedings ·Yung-Chung Kao,T.P.E. Broekaert,Diana Verónica,白利倩,I. H. Ho,G. B. Stringfellow	1996	17
8	Growth of photovoltaic semiconductors Journal of Electronic Materials ·Eli Yablonovitch,G. B. Stringfellow,J. E. Greene	1993	4
9	Control and characterization of ordering in GaInP Applied Physics Letters ·L. C. Su,Chang-Hua Lin,G. B. Stringfellow,J. Christen,Luciana Melillo,D. Bimberg	1993	46
10	GaInP/AlGaInP strained quantum wells grown using atmospheric pressure organometallic vapor phase epitaxy Journal of Crystal Growth ·Javad Khodaii,A. Barrett,Sarah Brunelle,D. Birkedal,G. B. Stringfellow	1991	32
11	Radical reactions in pyrolysis of triethylarsine and diethylarsine Journal of Crystal Growth ·S.H. Li,C.A. Larsen,G. B. Stringfellow	1991	3
12	Atomic ordering in GaAsP Journal of Applied Physics ·Chen Shengna,D. H. Jaw,G. B. Stringfellow	1991	63
13	Fundamental aspects of vapor growth and epitaxy Journal of Crystal Growth ·G. B. Stringfellow	1991	17
14	Current-voltage and capacitance-voltage behavior of high-resistivity (AlxGa1−x)yIn1−yP on GaAs Applied Physics Letters ·H. C. Casey,Frans-Erik Bergløf,O. Platas Barradas,Muhammad Lal,G. B. Stringfellow	1989	3
15	Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1−xSbx Applied Physics Letters ·M. J. Jou,Y. T. Cherng,H. R. Jen,G. B. Stringfellow	1988	55
16	American Crystal Growth 1987; Proceedings of the Seventh Conference, Monterey, CA, July 12-17, 1987 Journal of Crystal Growth ·G. B. Stringfellow	1987	1
17	Metalorganic vapor phase epitaxy 1986; Proceedings of the Third International Conference, Universal City, CA, April 13-17, 1986 Journal of Crystal Growth ·G. B. Stringfellow	1986	1
18	OMVPE growth of AlxGa1−xAs Journal of Crystal Growth ·G. B. Stringfellow	1981	53
19	Festkorper Probleme XV : Advances in Solid State Physics Journal of The Electrochemical Society ·H. J. Queisser,G. B. Stringfellow	1976	9
20	Photoelectronic Properties of ZnSe Crystals Physical Review ·G. B. Stringfellow,Richard H. Bube	1968	139

About G. B. Stringfellow

G. B. Stringfellow is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Electrical and Electronic Engineering, having authored 322 papers that have together received 13.3k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (222 papers), Semiconductor materials and devices (124 papers), Advanced Semiconductor Detectors and Materials (57 papers), Semiconductor materials and interfaces (57 papers), GaN-based semiconductor devices and materials (52 papers), Chalcogenide Semiconductor Thin Films (39 papers), Molecular Junctions and Nanostructures (36 papers) and Quantum Dots Synthesis And Properties (35 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (9.4k citations), Condensed Matter Physics (2.9k citations) and Electrical and Electronic Engineering (8.9k citations). G. B. Stringfellow has collaborated with scholars based in United States, South Korea and Germany. Frequent co-authors include I. H. Ho, R. M. Cohen, C.A. Larsen, N.I. Buchan, H. R. Jen, L. C. Su, P. E. Greene, M. J. Cherng, Zhen Fang and D. H. Jaw. Their work appears in journals such as Journal of Crystal Growth, Journal of Applied Physics, Applied Physics Letters, Journal of Electronic Materials and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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