Andrei Shibkov

414 total citations
32 papers, 288 citations indexed

About

Andrei Shibkov is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Andrei Shibkov has authored 32 papers receiving a total of 288 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 2 papers in Hardware and Architecture and 1 paper in Atomic and Molecular Physics, and Optics. Recurrent topics in Andrei Shibkov's work include Electrostatic Discharge in Electronics (20 papers), Integrated Circuits and Semiconductor Failure Analysis (14 papers) and Semiconductor materials and devices (11 papers). Andrei Shibkov is often cited by papers focused on Electrostatic Discharge in Electronics (20 papers), Integrated Circuits and Semiconductor Failure Analysis (14 papers) and Semiconductor materials and devices (11 papers). Andrei Shibkov collaborates with scholars based in United States, Canada and Japan. Andrei Shibkov's co-authors include В.А. Ващенко, M. Ershov, J.A. Babcock, P.A. Clifton, Sharad Saxena, S. Minehane, V. Ryzhii, Takashi Yamashita, D. White and S. Thijs and has published in prestigious journals such as Applied Physics Letters, Electronics Letters and Microelectronics Reliability.

In The Last Decade

Andrei Shibkov

28 papers receiving 271 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Andrei Shibkov United States	6	283	29	21	10	6	32	288
N. Revil France	10	413 1.5×	24 0.8×	13 0.6×	36 3.6×	7 1.2×	47	418
Gianluca Boselli United States	13	543 1.9×	20 0.7×	39 1.9×	12 1.2×	9 1.5×	61	550
María Toledano Luque Belgium	4	407 1.4×	17 0.6×	15 0.7×	35 3.5×	6 1.0×	8	413
Meng Duan United Kingdom	15	430 1.5×	19 0.7×	15 0.7×	17 1.7×	19 3.2×	38	444
Kai Esmark Germany	15	571 2.0×	12 0.4×	29 1.4×	15 1.5×	4 0.7×	58	575
W. Noble United States	11	286 1.0×	19 0.7×	23 1.1×	9 0.9×	9 1.5×	20	294
N. Nagashima Japan	8	183 0.6×	60 2.1×	16 0.8×	10 1.0×	25 4.2×	21	191
M. Rafik France	12	345 1.2×	16 0.6×	14 0.7×	20 2.0×	8 1.3×	52	347
Philipp Hehenberger Austria	4	423 1.5×	19 0.7×	15 0.7×	36 3.6×	5 0.8×	6	431
D. Schepis United States	9	166 0.6×	12 0.4×	22 1.0×	7 0.7×	18 3.0×	16	171

Countries citing papers authored by Andrei Shibkov

Since Specialization

Citations

This map shows the geographic impact of Andrei Shibkov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Andrei Shibkov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Andrei Shibkov more than expected).

Fields of papers citing papers by Andrei Shibkov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Andrei Shibkov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Andrei Shibkov. The network helps show where Andrei Shibkov may publish in the future.

Co-authorship network of co-authors of Andrei Shibkov

This figure shows the co-authorship network connecting the top 25 collaborators of Andrei Shibkov. A scholar is included among the top collaborators of Andrei Shibkov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Andrei Shibkov. Andrei Shibkov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

1.

Ващенко, В.А. & Andrei Shibkov. (2024). Extending ESD Network Capability to EOS and Overvoltage Protection. 1–11.

2.

Shibkov, Andrei & В.А. Ващенко. (2023). Electro-Thermal Mixed-Mode Analysis of HV Complementary DD-SCR’s. 1–7.

3.

Shibkov, Andrei, et al.. (2022). Short Term Overstress Degradation of ESD Avalanche Diodes Breakdown Characteristics. 1–6. 2 indexed citations

4.

Ващенко, В.А., Augusto Tazzoli, & Andrei Shibkov. (2016). PMOS arrays self-protection capability limitation. 6a4. 1–10.

5.

Ващенко, В.А., Slavica Malobabic, & Andrei Shibkov. (2016). Low voltage SCR clamp with high-V<inf>T</inf> reference. 21. 1–6.

6.

Scholz, Mirko, Geert Hellings, Shih‐Hung Chen, et al.. (2015). ESD protection design in active-lite interposer for 2.5 and 3D systems-in-package. 1–10. 4 indexed citations

7.

Tazzoli, Augusto, В.А. Ващенко, & Andrei Shibkov. (2014). Effect of process technology variation on ESD clamp parameters. Electrical Overstress/Electrostatic Discharge Symposium. 1–7. 3 indexed citations

8.

Ващенко, В.А. & Andrei Shibkov. (2014). Automated latchup analysis. Electrical Overstress/Electrostatic Discharge Symposium. 1–8. 2 indexed citations

9.

Ващенко, В.А. & Andrei Shibkov. (2012). SCR clamps with transient voltage detection driver. Electrical Overstress/Electrostatic Discharge Symposium. 1–5. 4 indexed citations

10.

Scholz, Mirko, Andrei Shibkov, D. Linten, et al.. (2012). Mixed-mode simulations for power-on ESD analysis. VUBIR (Vrije Universiteit Brussel). 1–9. 5 indexed citations

11.

Ващенко, В.А., et al.. (2011). On chip ESD protection of 600V voltage node. 128–131. 4 indexed citations

12.

Guardiani, Carlo, Andrei Shibkov, Angelo Brambilla, et al.. (2009). An I-IP based approach for the monitoring of NBTI effects in SoCs. 15–20. 1 indexed citations

13.

Shibkov, Andrei, et al.. (2005). Integrated Simulation Flow for Self-Consistent Manufacturability and Circuit Performance Evaluation. 127–130. 4 indexed citations

14.

Iniewski, K., et al.. (2004). Design strategies for ESD protection in SOC. 210–214. 1 indexed citations

15.

Iniewski, K., et al.. (2004). Design strategies for ESD protection in SOC. 210–214. 1 indexed citations

16.

Balasiński, A., et al.. (2004). Efficient Analysis and Optimization of ESD Protection Circuits. 1 indexed citations

17.

Ershov, M., Sharad Saxena, Andrei Shibkov, et al.. (2003). Transient effects and characterization methodology of negative bias temperature instability in pMOS transistors. 606–607. 23 indexed citations

18.

Pack, Robert C., et al.. (2003). Physical and timing verification of subwavelength-scale designs: I. Lithography impact on MOSFETs. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5042. 51–51. 8 indexed citations

19.

Saxena, Sharad, et al.. (2002). Circuit-device co-design for high performance mixed-signal technologies. 143–146. 1 indexed citations

20.

Shibkov, Andrei, M. Ershov, & V. Ryzhii. (1992). Numerical simulation of carrier transport in Schottky barrier diodes. Electronics Letters. 28(19). 1841–1842. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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