H. M. Al-Allak

744 total citations
20 papers, 616 citations indexed

About

H. M. Al-Allak is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, H. M. Al-Allak has authored 20 papers receiving a total of 616 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Materials Chemistry, 8 papers in Electrical and Electronic Engineering and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in H. M. Al-Allak's work include Ferroelectric and Piezoelectric Materials (12 papers), Multiferroics and related materials (5 papers) and Dielectric properties of ceramics (4 papers). H. M. Al-Allak is often cited by papers focused on Ferroelectric and Piezoelectric Materials (12 papers), Multiferroics and related materials (5 papers) and Dielectric properties of ceramics (4 papers). H. M. Al-Allak collaborates with scholars based in United Kingdom and Jordan. H. M. Al-Allak's co-authors include J. Woods, A.W. Brinkman, G.J. Russell, Stewart J. Clark, R. A. Abram, S. Brand, D. Bonnet, T. Hashemi, T. V. Parry and A. W. Roberts and has published in prestigious journals such as Physical review. B, Condensed matter, Journal of Applied Physics and Journal of the American Ceramic Society.

In The Last Decade

H. M. Al-Allak

20 papers receiving 600 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. M. Al-Allak United Kingdom 12 459 366 146 101 91 20 616
Charles D. E. Lakeman United States 11 474 1.0× 282 0.8× 83 0.6× 118 1.2× 222 2.4× 22 620
Takashi Okawa Japan 13 398 0.9× 384 1.0× 135 0.9× 80 0.8× 103 1.1× 36 572
F. Edelman Israel 11 308 0.7× 342 0.9× 59 0.4× 26 0.3× 76 0.8× 39 478
Tadashi Sekiya Japan 13 610 1.3× 391 1.1× 72 0.5× 247 2.4× 314 3.5× 25 679
Tien-Chai Lin Taiwan 14 377 0.8× 406 1.1× 72 0.5× 84 0.8× 78 0.9× 40 557
T. P. Leervad Pedersen Germany 12 433 0.9× 378 1.0× 58 0.4× 104 1.0× 100 1.1× 16 552
A. Amara Algeria 15 590 1.3× 402 1.1× 42 0.3× 87 0.9× 38 0.4× 32 654
Shumei Song China 14 403 0.9× 430 1.2× 78 0.5× 77 0.8× 82 0.9× 24 587
I. Samaras France 12 429 0.9× 364 1.0× 70 0.5× 74 0.7× 22 0.2× 24 557
R. Smirani Canada 13 409 0.9× 310 0.8× 52 0.4× 42 0.4× 166 1.8× 19 467

Countries citing papers authored by H. M. Al-Allak

Since Specialization
Citations

This map shows the geographic impact of H. M. Al-Allak's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. M. Al-Allak with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. M. Al-Allak more than expected).

Fields of papers citing papers by H. M. Al-Allak

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. M. Al-Allak. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. M. Al-Allak. The network helps show where H. M. Al-Allak may publish in the future.

Co-authorship network of co-authors of H. M. Al-Allak

This figure shows the co-authorship network connecting the top 25 collaborators of H. M. Al-Allak. A scholar is included among the top collaborators of H. M. Al-Allak based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. M. Al-Allak. H. M. Al-Allak is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Al-Allak, H. M.. (2011). Anomalous Increase in the Resistivity of n‐Doped BaTiO 3 ‐Based Ceramics with Pressure Observed at Room Temperature. Journal of the American Ceramic Society. 94(9). 2757–2760. 7 indexed citations
2.
Al-Allak, H. M. & Stewart J. Clark. (2001). Valence-band offset of the lattice-matchedβFeSi2(100)/Si(001)heterostructure. Physical review. B, Condensed matter. 63(3). 17 indexed citations
3.
Clark, Stewart J., H. M. Al-Allak, S. Brand, & R. A. Abram. (1998). Structure and electronic properties ofFeSi2. Physical review. B, Condensed matter. 58(16). 10389–10393. 101 indexed citations
4.
Al-Allak, H. M., et al.. (1996). Dependence of thin film solar cell characteristics on the processing conditions. Journal of Crystal Growth. 159(1-4). 910–915. 50 indexed citations
5.
Durose, K., et al.. (1996). Transmission electron microscopy of based solar cells. Journal of Crystal Growth. 161(1-4). 159–163. 32 indexed citations
6.
Al-Allak, H. M., A.W. Brinkman, & J. Woods. (1993). I-V characteristics of carbon black-loaded crystalline polyethylene. Journal of Materials Science. 28(1). 117–120. 83 indexed citations
7.
Al-Allak, H. M., et al.. (1992). Low-temperature pyroelectric anomalies in single domain crystals of triglycine sulphate. Journal of Materials Science. 27(24). 6743–6746. 1 indexed citations
8.
Al-Allak, H. M., et al.. (1990). The influence of Mn on the grain-boundary potential barrier characteristics of donor-doped BaTiO3 ceramics. Journal of Applied Physics. 67(4). 2088–2092. 61 indexed citations
9.
Al-Allak, H. M., A.W. Brinkman, P.A. Clifton, & Paul D. Brown. (1990). The Epitaxial Growth by Movpe of (Hg,Mn)Te On (001) Gaas Substrates. MRS Proceedings. 216. 7 indexed citations
10.
Hashemi, T., et al.. (1990). Sintering behaviour of zinc stannate. Journal of Materials Science Letters. 9(7). 776–778. 53 indexed citations
11.
Al-Allak, H. M., et al.. (1990). Dependence of the grain boundary potential barrier height of BaTiO3ceramics on donor dopant concentration. Journal of Physics D Applied Physics. 23(7). 971–975. 8 indexed citations
12.
Al-Allak, H. M., et al.. (1989). Current-voltage characteristics of donor-doped BaTiO3semiconducting ceramics. Journal of Physics D Applied Physics. 22(9). 1393–1397. 9 indexed citations
13.
Al-Allak, H. M., et al.. (1989). Permittivity-temperature behaviour of donor-doped positive temperature coefficient of resistance BaTiO3ceramics. Journal of Physics D Applied Physics. 22(12). 1920–1923. 10 indexed citations
14.
Parry, T. V., H. M. Al-Allak, G.J. Russell, & J. Woods. (1989). The effect of aluminium on the electrical and mechanical properties of BaTiO3 ceramics as a function of sintering temperature. Journal of Materials Science. 24(10). 3478–3482. 3 indexed citations
15.
Al-Allak, H. M., T. V. Parry, G.J. Russell, & J. Woods. (1988). Effects of aluminium on the electrical and mechanical properties of PTCR BaTiO3 ceramics as a function of the sintering temperature. Journal of Materials Science. 23(3). 1083–1089. 32 indexed citations
16.
Al-Allak, H. M., A.W. Brinkman, G.J. Russell, & J. Woods. (1988). The effect of Mn on the positive temperature coefficient of resistance characteristics of donor doped BaTiO3 ceramics. Journal of Applied Physics. 63(9). 4530–4535. 63 indexed citations
17.
Al-Allak, H. M., A.W. Brinkman, G.J. Russell, A. W. Roberts, & J. Woods. (1988). The effect of donor dopant concentration on the room temperature resistivity of BaTiO3ceramics with positive temperature coefficients of resistance. Journal of Physics D Applied Physics. 21(7). 1226–1233. 19 indexed citations
18.
Al-Allak, H. M., et al.. (1988). The effects of donor dopant concentration on the grain boundary layer characteristics in n-doped BaTiO3 ceramics. Journal of Applied Physics. 64(11). 6477–6482. 21 indexed citations
19.
Al-Allak, H. M., G.J. Russell, & J. Woods. (1987). The effect of annealing on the characteristics of semiconducting BaTiO3positive temperature coefficient of resistance devices. Journal of Physics D Applied Physics. 20(12). 1645–1651. 38 indexed citations
20.
Al-Allak, H. M., et al.. (1986). Investigations of the free-domain-wall contribution to the dielectric properties of TGS crystals using a fast-response step voltage technique. Journal of Physics D Applied Physics. 19(7). 1335–1342. 1 indexed citations

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